AGR21030E Search Results
AGR21030E Datasheets (4)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| AGR21030E | TriQuint Semiconductor | 30 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET | Original | 326.26KB | 9 | ||
| AGR21030EF | Agere Systems | FET, 90W, 2.110GHz-2.17GHz, N-Channel E-Mode, Lateral MOSFET | Original | 323.97KB | 10 | ||
| AGR21030EF | Agere Systems | 30 W, 2.110 GHz - 2.170 GHz, N-Channel E-Mode, Lateral MOSFET | Original | 215.86KB | 10 | ||
| AGR21030EU | Agere Systems | FET, 90W, 2.110GHz-2.17GHz, N-Channel E-Mode, Lateral MOSFET | Original | 323.97KB | 10 |
AGR21030E Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
J593
Abstract: AGR21030E AGR21030EF AGR21030EU JESD22-C101A J157
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agr21030eagr21030euagr21030efds04-163rfpp+4 | |
AGR21030EF
Abstract: 2.4 ghz mosfet AGR21030XF JESD22-C101A
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agr21030ef1030efagr21030xf21045f+3 | |
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Contextual Info: Preliminary Product Brief April 2003 AGR21030E 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband |
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agr21030eagr21030euagr21030efpb03-095rfpp+1 | |
AGR21030EF
Abstract: AGR21030XF JESD22-C101A J622
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agr21030efds04-225rfppds04-200rfppagr21030xf+2 | |
J605Contextual Info: Preliminary Data Sheet December 2003 AGR21030E 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband |
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agr21030eagr21030euagr21030efpowe10-12+2 | |
RF POWER MOSFET
Abstract: J605 amphenol 24- 28 pf
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agr21030efrf power mosfetj605amphenol 24- 28 pf | |
2.4 ghz mosfetContextual Info: Preliminary Data Sheet November 2003 AGR21030E 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband |
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agr21030eagr21030euagr21030efjuncti10-12+2 | |
AGR21030E
Abstract: AGR21030EF AGR21030EU JESD22-C101A
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agr21030eagr21030euagr21030efperformance-12+3 | |
AGR21030E
Abstract: AGR21030EF AGR21030EU JESD22-A114
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agr21030eagr21030euagr21030efcarr10-712-4106+2 | |
TGA2517
Abstract: TQP6M9002 TQM653029 TGS4304 SG-O1-16 TGA2503 TAT7469 TGA9092-SCC 854651 AH125
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cus937tga2517tqp6m9002tqm653029+7 | |
TGA2517
Abstract: TQP6M9002 TQM7M5013 TGA4943-SL CGB241 TQM6M4003 bt ag402 TGA4956-SM TQM6M4048 TGA9092-SCC
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tga2517tqp6m9002tqm7m5013tga4943-sl+6 | |
AGRA10EM
Abstract: APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM
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ca03-005rfpp-7ca03-005rfpp-6agra10emapp550+8 |