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    BLF6G20-110; Search Results

    BLF6G20-110; Datasheets (3)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    BLF6G20-110
    		NXP Semiconductors Power LDMOS transistor Original PDF 68.75KB 9
    BLF6G20-110
    		NXP Semiconductors Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 31 %; Frequency band: 1800 - 2000 GHz; Mode: W-CDMA / UMTS ; Output power: 25 W; Package material: SOT502A ; Power gain: 19 dB Original PDF 76.32KB 10
    BLF6G20-110,112
    		NXP Semiconductors Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 31 %; Frequency band: 1800 - 2000 GHz; Mode: W-CDMA / UMTS ; Output power: 25 W; Package material: SOT502A ; Power gain: 19 dB; Package: SOT502A (LDMOST); Container: Blister pack Original PDF 76.32KB 10
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    BLF6G20-110; Price and Stock

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    Ampleon BLF6G20-110,112

    RF MOSFET LDMOS 28V SOT502A
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    DigiKey BLF6G20-110,112 Tray
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    Avnet Americas BLF6G20-110,112 Tube 26 Weeks 60
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    NXP Semiconductors BLF6G20-110,112

    Discontinued
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    Vyrian BLF6G20-110,112 595
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