Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers
    Manufacturer Search

    CGHV96050F2 Search Results

    CGHV96050F2 Datasheets (3)

    Select Manufacturer
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    CGHV96050F2
    		Cree RF FETs, Discrete Semiconductor Products, FET RF GAN HEMT 50W Original PDF 12
    CGHV96050F2-AMP
    		Wolfspeed CGHV96050F2 DEV BOARD WITH HEMT Original PDF 1.15MB
    CGHV96050F2-TB
    		Cree RF Evaluation and Development Kits, Boards, RF/IF and RFID, TEST FIXTURE FOR CGHV96050F2 Original PDF 12
    SF Impression Pixel

    CGHV96050F2 Price and Stock

    Select Manufacturer

    MACOM CGHV96050F2

    GaN FETs GaN HEMT 7.9-9.6GHz, 50 Watt
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics CGHV96050F2
    • 1 $943.65
    • 10 $943.65
    • 100 $943.65
    • 1000 $943.65
    • 10000 $943.65
    		Get Quote
    Win Source Electronics CGHV96050F2 200
    • 1 $1863.64
    • 10 $1863.64
    • 100 $1863.64
    • 1000 $1863.64
    • 10000 $1863.64
    		Buy Now

    MACOM CGHV96050F2-AMP

    RF Development Tools AMPLIFIER ASSY, INCLUDES CGHV96050F2
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics CGHV96050F2-AMP
    • 1 -
    • 10 $1719.44
    • 100 $1719.44
    • 1000 $1719.44
    • 10000 $1719.44
    		Get Quote

    Wolfspeed CGHV96050F2

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Vyrian CGHV96050F2 19,100
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    CGHV96050F2 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    CGHV96050F2

    Contextual Info: CGHV96050F2 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96050F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison


    Original     		cghv96050f250-ohmcghv96050f2 PDF

    Contextual Info: CGHV96050F2 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96050F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison


    Original     		cghv96050f250-ohm PDF

    CGHV96050F2

    Abstract: CGHV96
    Contextual Info: CGHV96050F2 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96050F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison


    Original     		cghv96050f250-ohmcghv96050f2 PDF