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CGHV96 Datasheets (13)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
CGHV96050F1		Cree/Wolfspeed	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF MOSFET HEMT 40V 440210	Original	PDF	1.72MB
CGHV96050F1-AMP		Wolfspeed	CGHV96050F1 DEV BOARD WITH HEMT	Original	PDF	1.66MB
CGHV96050F1-AMP		Wolfspeed	CGHV96050F1 DEV BOARD WITH HEMT	Original	PDF	1.82MB
CGHV96050F1-TB		Cree/Wolfspeed	RF/IF and RFID - RF Evaluation and Development Kits, Boards - BOARD TEST FIXTURE FOR CGHV96050	Original	PDF	1.72MB
CGHV96050F2		Cree	RF FETs, Discrete Semiconductor Products, FET RF GAN HEMT 50W	Original	PDF		12
CGHV96050F2-AMP		Wolfspeed	CGHV96050F2 DEV BOARD WITH HEMT	Original	PDF	1.15MB
CGHV96050F2-TB		Cree	RF Evaluation and Development Kits, Boards, RF/IF and RFID, TEST FIXTURE FOR CGHV96050F2	Original	PDF		12
CGHV96100F2		Cree	RF FETs, Discrete Semiconductor Products, FET RF GAN HEMT 100W	Original	PDF		12
CGHV96100F2-AMP		Wolfspeed	CGHV96100F2 DEV BOARD WITH HEMT	Original	PDF	1.57MB
CGHV96100F2-AMP		Wolfspeed	CGHV96100F2 DEV BOARD WITH HEMT	Original	PDF	1.24MB
CGHV96100F2-TB		Cree	RF Evaluation and Development Kits, Boards, RF/IF and RFID, TEST FIXTURE FOR CGHV96100F2	Original	PDF		12
CGHV96130F		Wolfspeed	100W GAN HEMT 7.9-9.6GHZ 50-OHM	Original	PDF	960.33KB
CGHV96130F-AMP		Wolfspeed	8.4-9.6GHZ, AMP W/ CGHV96100F2	Original	PDF	960.33KB

CGHV96 Price and Stock

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MACOM


MACOM CGHV96130F GaN FETs Amplifier,130W,GaN HEMT,40V,8.4-9.6GHz
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	CGHV96130F		26			1 $1468.59 10 $1468.59 100 $1468.59 1000 $1468.59 10000 $1468.59	Buy Now
MACOM CGHV96050F2 GaN FETs GaN HEMT 7.9-9.6GHz, 50 Watt
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	CGHV96050F2					1 $943.65 10 $943.65 100 $943.65 1000 $943.65 10000 $943.65	Get Quote
Win Source Electronics	CGHV96050F2		200			1 $1863.64 10 $1863.64 100 $1863.64 1000 $1863.64 10000 $1863.64	Buy Now
MACOM CGHV96100F2 GaN FETs GaN HEMT 7.9-9.6GHz, 100 Watt
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	CGHV96100F2					1 $1488.59 10 $1488.59 100 $1488.59 1000 $1488.59 10000 $1488.59	Get Quote
MACOM CGHV96050F2-AMP RF Development Tools AMPLIFIER ASSY, INCLUDES CGHV96050F2
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	CGHV96050F2-AMP					1 - 10 $1719.44 100 $1719.44 1000 $1719.44 10000 $1719.44	Get Quote
MACOM CGHV96100F2-AMP RF Development Tools Eval Board 8.4-9.6GHz
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	CGHV96100F2-AMP					1 - 10 $2292.52 100 $2292.52 1000 $2292.52 10000 $2292.52	Get Quote

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CGHV96 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison	Original	cghv96100f2 50-ohm cghv96 100f2	PDF
CGHV96050F2 Contextual Info: CGHV96050F2 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96050F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison	Original	cghv96050f2 50-ohm cghv96 050f2	PDF
Contextual Info: CGHV96100F1 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96100F1 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison	Original	cghv96100f1 50-ohm cghv96 100f1	PDF
40VPulse Contextual Info: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison	Original	cghv96100f2 50-ohm cghv96 100f2 +140vpulse	PDF
Contextual Info: CGHV96050F2 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96050F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison	Original	cghv96050f2 50-ohm	PDF
Contextual Info: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison	Original	cghv96100f2 50-ohm cghv96 100f2	PDF
Contextual Info: CGHV96050F1 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96050F1 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison	Original	cghv96050f1 50-ohm cghv96 050f1	PDF
Contextual Info: CGHV96050F1 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96050F1 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison	Original	cghv96050f1 50-ohm cghv96 050f1	PDF
CGHV96050F2 Abstract: CGHV96 Contextual Info: CGHV96050F2 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96050F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison	Original	cghv96050f2 50-ohm cghv96 050f2	PDF
CGHV96100F2 Contextual Info: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison	Original	cghv96100f2 50-ohm cghv96 100f2	PDF
CGHV96050F1 Contextual Info: CGHV96050F1 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96050F1 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison	Original	cghv96050f1 50-ohm cghv96 050f1	PDF
Contextual Info: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison	Original	cghv96100f2 50-ohm cghv96 100f2	PDF
CGHV96100F1 Abstract: taconic Contextual Info: CGHV96100F1 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96100F1 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison	Original	cghv96100f1 50-ohm cghv96 100f1 +1taconic	PDF