CGHV96050F1 Search Results
CGHV96050F1 Datasheets (4)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| CGHV96050F1 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF MOSFET HEMT 40V 440210 | Original | 1.72MB | |||
| CGHV96050F1-AMP |
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CGHV96050F1 DEV BOARD WITH HEMT | Original | 1.66MB | |||
| CGHV96050F1-AMP |
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CGHV96050F1 DEV BOARD WITH HEMT | Original | 1.82MB | |||
| CGHV96050F1-TB |
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RF/IF and RFID - RF Evaluation and Development Kits, Boards - BOARD TEST FIXTURE FOR CGHV96050 | Original | 1.72MB |
CGHV96050F1 Price and Stock
MACOM CGHV96050F1RF MOSFET HEMT 40V 440210 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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CGHV96050F1 | Tray | 16 | 1 |
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CGHV96050F1 |
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CGHV96050F1 | 29 | 1 |
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CGHV96050F1 | 29 | 1 |
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MACOM CGHV96050F1-AMPCGHV96050F1 DEV BOARD WITH HEMT |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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CGHV96050F1-AMP | Box |
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CGHV96050F1-AMP | 1 |
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MACOM CGHV96050F1-TBCGHV96050F1-TB |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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CGHV96050F1-TB | 2 | 2 |
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CGHV96050F1-TB | 2 | 1 |
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Wolfspeed CGHV96050F1Transistors |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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CGHV96050F1 | 35 |
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CGHV96050F1 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: CGHV96050F1 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96050F1 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison |
Original |
CGHV96050F1 50-ohm, CGHV96050F1 CGHV96 050F1 | |
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Contextual Info: CGHV96050F1 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96050F1 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison |
Original |
CGHV96050F1 50-ohm, CGHV96050F1 CGHV96 050F1 | |
CGHV96050F1Contextual Info: CGHV96050F1 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96050F1 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison |
Original |
CGHV96050F1 50-ohm, CGHV96050F1 CGHV96 050F1 |