4511A Search Results

Contextual Info: TOSHIBA TC 74 H C 4511AP/AF TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4511AP, 4511AF BCD- T O -7 SEGMENT LATCH / DECODER/DRIVER The 4511A is a high speed CMOS BCD-TO-7 SEGMENT LATCH / DECODER / DRIVER fabricated with silicon gate C2MOS technology.

Contextual Info: II 4511AP/AF BCD-TO-7 SEGMENT LATCH/DECO DER/DRIVER T h e TC74H C 4511A is h ig h sp e e d CM O S B C D - T O - 7 S E G M E N T L A T C H /D E C O D E R /D R I V E R fa b ric a te d w ith silic o n g a te C2M O S te c h n o lo g y . It a c h ie v e s th e h ig h sp e e d o p e r a tio n s i m i l a r to

T164A

Abstract: 4072A T139A 112AP T688AP 123AP 423AP 4316AP 27AP DIP packaged quad nor
Contextual Info: C2MOS Logic TC74HC/HCT Series Product Guide 1. High Speed C M O S Product Guide Type Number Function Pin Page TC74HC OOAP/AF/AFN TOOAP/AF 02AP/AF/AFN T02AP/AF 03AP/AF/AFN 04AP/AF/AFN T04AP/AF/AFN U04AP/AF/AFN 05AP/AF 07AP/AF QUAD 2-INPUT NAND GATE QUAD 2-INPUT NAND GATE

SIDC161D170H

Contextual Info: SIDC161D170H Fast switching diode chip in EMCON 3 -Technology FEATURES: • 1700V EMCON 3 technology 200 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR IF SIDC161D170H 1700V 300A A This chip is used for:

PEG 122

Abstract: 123MR2220Q peg122 din 41240 PEG124ER3100M PEG122PD2470Q PEG124PF310VQ PEG123 122PB2330Q 124VE2100Q
Contextual Info: PEG 122 electrolytic capacitors PEG 122 105°C • 105 °C • Low ESR, down to 40mΩ • Long Life, > 20 years at 50°C • Low ESL, down to 5nH Application Basic design Smoothing, coupling/decoupling and energy storage in telecommunication, power supply systems, process control

PEG 122

Abstract: L1035 124Y
Contextual Info: PEG 122 • • • • 105°C 105 °C Long Life, > 20 years at 50°C Low ESR, down to 40mΩ Low ESL, down to 5nH APPLICATION BASIC DESIGN Smoothing, coupling/decoupling and energy storage in telecommunication, power supply systems, process control and measuring equipment. Due to the long

MGF1200

Abstract: MGF4310 MGF1100 MGF1412 MGF4301 MGF1304 MGF7003 MGF1102 MGF1302 MGF4305A
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> SYMBOL ON PACKAGE EXAMPLE OF SYMBOL ON MICRO DISK PACKAGE W ithou t bottom bar w ith b o tto m bar Blue A p r. O o t. Orange M ay N ov. B lack June D ec. Red July Jan . Green A ug. Feb. Brown S ep. M a r. « L e f t side c h a ra c te r in d ic a te s th e type num ber.

CM4024AE

Abstract: CM4007 dual stage inverter circuits diagrams CM4002AE CM4052 CM4001AE CM4011AE CM4047AE CM4015AE CM4043AE
Contextual Info: Solidev Sem iconductors Integrated Circuits - Digital CMOS CM4000 Series CM OS E q u iv a le n t to R C A CD 4000AE S e rie s G E N E R A L D E S C R IP T IO N Com plem entary M O S circu its are norm ally made on an N-type substrate, w hich necessitates the

BPW22A

Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
Contextual Info: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey

Contextual Info: SIDC161D170H Fast switching diode chip in EMCON 3 -Technology FEATURES: • 1700V EMCON 3 technology 200 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR IF SIDC161D170H 1700V 300A A This chip is used for:

PEG 122

Abstract: capacitor 122k long life electrolytic capacitor PEG122
Contextual Info: PEG 122 electrolytic capacitors - PEG 122 105°C • 1 0 5 °C • Low ESR, down to 40mQ • Long Life, > 20 years at 50°C • Low ESL, down to 5nH Application Basic design

Hex to 7 Segment converter

Abstract: TC5032P 4 digit COUNTER LED bcd TC4029BP TC4014BP cmos TC4011 TC4099BP TC5051P 6-DIGIT DECADE COUNTER TC4073BP
Contextual Info: T O S H IB A [1 2 ] Î^ T ÿ J f ilh p p S 1. — K K '> ' J ~ : X 7 p p fl . ÏÎUL 1 9 7 4 ^ j; V £ Ü £ Baiôx tz tz l ' T *3 V £ t ia *±7 . $ > # - TC4500B / TC5000 V U - X ^ t s È S [y T Ji(T(7) U y = l— TC4000B / ia*±¥^1*M pnp : É J i£ W Î ^ £ RvlHfc-f 3 £ « k

SIDC161D170H

Contextual Info: Preliminary SIDC161D170H Fast switching diode chip in EMCON 3 -Technology FEATURES: • 1700V EMCON 3 technology 200 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR IF SIDC161D170H 1700V 300A

TL E28

Abstract: CD4000AE CM4000 CM4000AE CM4001AE CM4002AE CM4011A CM4011AE clocked RS flip flop 4042AE
Contextual Info: Solidev Sem iconductors Integrated Circuits - Digital CMOS CM4000 Series CM OS E q u iv a le n t to R C A CD4000AE S e rie s G E N E R A L D E S C R IP T IO N Com plem entary M O S circu its are norm ally made on an N-type substrate, w hich necessitates the

APT4511AFN

Abstract: APT5011AFN SD diode
Contextual Info: ADVANCED POWER T E CH NO LO GY □ 2 S 7 T 0 cî 000058a MIE D 231 M A V P A dvanced R o w er Techno lo g y APT5011AFN 500V 49.0A a i l 4511AFN 450V 49.0A 0.11 POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET# i i avi b i i i i i n a

PEG 122

Abstract: peg122 rifa PEG 122 PEG122GA3150Q 122PB2330Q
Contextual Info: PEG 122 • • • • 105°C 105 °C Long Life, > 20 years at 50°C Low ESR, down to 40mΩ Low ESL, down to 5nH APPLICATION BASIC DESIGN Smoothing, coupling/decoupling and energy storage in telecommunication, power supply systems, process control and measuring equipment. Due to the long

4511A

Contextual Info: Preliminary SIDC161D170H Fast switching diode chip in EMCON 3 -Technology FEATURES: • 1700V EMCON 3 technology 200 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR IF SIDC161D170H 1700V 300A

Contextual Info: ADVANCED POWER TECHNOLOGY MREJ> □asTTOT ooQosaa 231 m a v p A d vanc ed P o w e r T-SVtS T e c h n o lo g y 9 D 2 APT5011AFN 500V 49.0A a i l 4511AFN 450V 49.0A 0.11 O S(2) POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MQSFCT# All A"

Mys 99 178

Abstract: MYS 99 cj1w-cort21 NT31C-ST143-Ev3 MYS 99 133 E5CS-R1KJ 8203-M TL-X1R 4503m st MYS 99 102
Contextual Info: Product Code Description AA994896G 537.019.200 E2A 7033A 02A-M18KS08-WP-C1 5M OMC PF 1234C 11PFA PF 1235A 14PFA VAP 1001D 1VAP-1W VAP21001C 1VAP2-1 VAP21004H 1VAP2-2 VAP21015C 1VAP2-6 VE 2001G 1VE-10CA-11 VE 2002E 1VE-10CA-12 VE 2003C 1VE-10CA-13 VE 3001B

CM4000AE

Abstract: CM4011AE CM4021AE CM4002AE CM4020A CD4000AE CM4000 CM4001AE CM4011A FET pair n-channel p-channel
Contextual Info: Solidev Sem iconductors Integrated Circuits - Digital CMOS CM4000 Series CM OS E q u iv a le n t to R C A CD 4000AE S e rie s G E N E R A L D E S C R IP T IO N Com plem entary M O S circu its are norm ally made on an N-type substrate, w hich necessitates the

CM4007

Abstract: CM4011AE CM4049AE CM4021AE CM4001AE CM4023AE CM4012AE CM4040AE CM4030AE CM4026AE
Contextual Info: Solidev Sem iconductors Integrated Circuits - Digital CMOS CM4000 Series CM OS E q u iv a le n t to R C A CD 4000AE S e rie s G E N E R A L D E S C R IP T IO N Com plem entary M O S circu its are norm ally made on an N-type substrate, w hich necessitates the

dual stage inverter circuits diagrams

Abstract: CM4011AE 4007ae 4007A fet e27 4028A CD4000AE CM4007AE CM4000AE CM4001AE
Contextual Info: Solidev Sem iconductors Integrated Circuits - Digital CMOS CM4000 Series CM OS E q u iv a le n t to R C A CD 4000AE S e rie s G E N E R A L D E S C R IP T IO N Com plem entary M O S circu its are norm ally made on an N-type substrate, w hich necessitates the

597A

Abstract: 4316-A 4538A 4049A 4066A TC74HCT TC74HC
Contextual Info: X41 Type Number Function No. of Pins DIP P TC74HC TC74HCT TC74HC TC74HCT TC74HC TC74HCT TC74HC TC74HC TC74HCT TC74HC 540A 540A 541A 541A 563A 563A 564A 573A 573A 574A OCTAL BUS BUFFER (3-STATE/INV.) OCTAL BUS BUFFER (3-STATE/INV.) OCTAL BUS BUFFER (3-STATE)

SML4511AFN

Abstract: LE17 SML5011AFN
Contextual Info: SEMELAB PLC bGE » • 0133107 00GGfl72 7=i3 ■■ S MLB MOS POWER "T-3a-\s INI = ^ = SEME LAB SML5011AFN 4511AFN A 500V 49.0A 0.11 £2 450V 49.0A 0.11 £2 N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified.