450017 Search Results

29F002

Abstract: A1317 AS29F002B-120SC
Contextual Info: High Performance 256Kx8 5V CMOS Flash EEPROM AS29F002 2 Megabit 5V CMOS Flash EEPROM Preliminary information Features • Organization: 256K×8 • Sector architecture • Low power consumption - One 16K; two 8K; one 32K; and three 64K byte sectors - Boot code sector architecture—T top or B (bottom)

Contextual Info: Bill of Materials: Propeller Board of Education Part Number: 32900 Product Owner: Education Revision: A Last Updated: 3/22/2012 3:08:02 PM Syspro_Desc RES,20,5%,0402 RES,16k,5%,0402 RES,240,5%,0402 RES,8.2k,1%,0402 RES,18k,1%,0402 RES,20k,1%,0402 RES,60.4k,1%,0402

TAA 621

Abstract: MD 202 TAA 621 applications AS7C1026-15JC AS7C1026 AS7C31026 7C1026 AS7C31026-25JC AS7C1026-25JC J-Squared Technologies
Contextual Info: High Performance 64Kx16 CMOS SRAM AS7C1026 AS7C31026 64K×16 CMOS SRAM Preliminary information Features • Organization: 65,536 words × 16 bits • High speed - 12/15/20/25 ns address access time - 6/8/10/12 ns output enable access time • Low power consumption

1702 eprom programmer

Abstract: TAA 761 A HV Component Associates 512K8 1702 eprom 1702 EPROM data sheet AS29F040-120LC as29f040-55lc AS29F040-70LC eprom 1702
Contextual Info: High Performance 512Kx8 5V CMOS Flash EEPROM AS29F040 512K×8 CMOS Flash EEPROM Preliminary information Features • Low power consumption • Organization: 512K×8 • Sector architecture - 30 mA maximum read current - 60 mA maximum program current - 50 µA typical standby current

7C34098-20

Abstract: AS7C34098 AS7C4098
Contextual Info: High Performance 256Kx16 CMOS SRAM AS7C4098 AS7C34098 256K×16 CMOS SRAM Preliminary information Features • Organization: 262,144 words × 16 bits • High speed - 15/20/25/35 ns address access time - 8/10/12/15 ns output enable access time • Low power consumption

AS7C3512-15PC

Abstract: AS7C3512-25PC AS7C3512-12JC AS7C3512-12PC alliance promotion 60465
Contextual Info: High Performance 64Kx8 3.3V CMOS SRAM AS7C3512 AS7C3512L Low voltage 64K×8 CMOS SRAM Preliminary information Features • Organization: 65,536 words × 8 bits • Single 3.3 ±0.3V power supply • 5V tolerant I/O specification • High speed - 12/15/20/25/35 ns address access time

AA 12025

Abstract: Z0 607 MN 64K32 J-Squared Technologies
Contextual Info: High Performance 64Kx32 CMOS SRAM AS7C36432 64K×32 Synchronous burst SRAM Preliminary information Features • Organization: 65,536 words × 32 bits • Fully synchronous pipelined operation • Flow-through option • Fast clocking speed: 100/75/66 MHz

MD 202

Abstract: MW SW front END SW 3395 6V TAA 621 applications 13831 epos Electronics TAA 521 A TEXAS CT 306 AS7C1025 AS7C31025
Contextual Info: High Performance 128Kx8 CMOS SRAM AS7C1025 AS7C31025 128K×8 CMOS SRAM Common I/O Preliminary information Features • Organization: 131,072 words × 8 bits • High speed - 10/12/15/20 ns address access time - 3/3/4/5 ns output enable access time • Low power consumption

29f400

Abstract: flash 29f400 1702 eprom MD 202 1702 eprom programmer AN 5011 P HV Component Associates 512KO J-Squared Technologies 29F400-90
Contextual Info: High Performance 512Kx8/256K×16 5V CMOS Flash EEPROM AS29F400 512K×8/256K×16 CMOS Flash EEPROM Preliminary information Features • Organization: 512K×8 or 256K×16 • Sector architecture • Low power consumption - 35 mA maximum read current - 60 mA maximum program current

Contextual Info: High Performance 128Kx8 CMOS Flash KEPROM II AS29F010 AS29F011 5 \ 128KxX CMOS Flash Memory FEATU RES • Organization: 131,072 words x 8 bits • JEDEC standard write cycle commands • Sector Erase architecture - protects data from accidental changes - Four 32K x 8 sectors

Contextual Info: DATE REV ECN APP'D. BY 5 -8-0 6 C1 7618 TRM B COLOR PART NUMBER [2.21 ± 0.10] [14.00 ±0.15] 450-011 BLACK 450-012 DARK GREY 450-013 YELLOW 450-014 GREEN 450-015 BLUE 450-016 LIGHT GREY 450-017 PURPLE 450-018 WHITE 450-019 RED NOTES: 1. CONNECTOR MATERIALS:

AS7C256

Abstract: 256x128x8 TI 344C
Contextual Info: High Performance 32Kx8 CMOS SRAM II ^ L lh . AS7C256 AS7C256L 32Kx8 CMOS SRAM Common I/O FEATURES • Organization: 32,768 words x 8 bits • Equal access and cycle times • High speed • Easy memory expansion with CE and OE inputs - 10/12/15/20/25/35 ns address access time

7 segment display 5611

Abstract: 29F010 single 7 segment display 5611 9224 AS29F011 HV Component Associates taa 723 uA 723 h AS29F010 29F010-70
Contextual Info: High Performance 128Kx8 CMOS Flash EEPROM AS29F010 AS29F011 5V 128K×8 CMOS Flash Memory FEATURES • Organization:131,072 words × 8 bits • JEDEC standard write cycle commands • Sector Erase architecture – protects data from accidental changes – Four 32K × 8 sectors

AS7C1028-25PC

Abstract: AS7C1028-20JC 28-pin SOJ SRAM AS7C1028 AS7C1028-12TPC 7C1028
Contextual Info: High Performance 256Kx4 CMOS SRAM AS7C1028 AS7C1028L 256K×4 CMOS SRAM Features • Organization: 262,144 words × 4 bits • High speed - 12/15/20/25/35 ns address access time - 4/4/5/6/8 ns output enable access time • Low power consumption - Active: 660 mW max 15 ns cycle

datasheet 29f200

Abstract: 8282 ADDRESS LATCH HV Component Associates 29f200-90 AS29F200T
Contextual Info: High Performance 256Kx8/128×16 5V CMOS Flash EEPROM AS29F200 2 Megabit 5V CMOS Flash EEPROM Preliminary information Features • Organization: 256K×8 or 128K×16 • Sector architecture • Low power consumption - One 16K; two 8K; one 32K; and three 64K byte sectors

AS7C1024

Abstract: AL205 AS7C31024 IN317
Contextual Info: Hi gh Per for m an ce 128K 128 K x8 C M OS S R A M A S 7C1024 A S 7C31024 1288K ×8 CMOS S R A M 12 Features • Organization: 131,072 words × 8 bits • High speed - 10/12/15/20 ns address access time - 3/3/4/5 ns output enable access time • Low power consumption

Contextual Info: High Performance 32Kx9 CMOS SRAM II AS7C259 AS7C259L 32Kx9 CMOS SRAM Common I/O FEATURES Organization: 32,768 words x 9 bits • 2.0V data retention (L version) High speed • Equal access and cycle times - 12/15/20/25/35 ns address access tíme • Easy memory expansion with CE1, CE2, and OE inputs

transistor sb 772

Abstract: 9726 28-pin SOJ SRAM 8282 ADDRESS LATCH datasheet CI 9762 AS7C164 AS7C164-10PC AS7C164-12PC AS7C164-8JC AS7C164-20PC
Contextual Info: High Performance 8Kx8 CMOS SRAM AS7C164 AS7C164L 8K×8 CMOS SRAM Common I/O Features • Organization: 8,192 words × 8 bits • High speed - 8/10/12/15/20 ns address access time - 3/3/3/4/5 ns output enable access time • Low power consumption - Active: 633 mW max (10 ns cycle)

taa 723

Abstract: concord
Contextual Info: High Performance 32Kx9 CMOS SRAM AS7C259 AS7C259L 32K×9 CMOS SRAM Common I/O FEATURES • Organization: 32,768 words × 9 bits • 2.0V data retention (L version) • High speed • Equal access and cycle times – 12/15/20/25/35 ns address access time

TAA 761 A

Abstract: AS7C31024 AS7C31024-12PC
Contextual Info: High Performance 128Kx8 3.3V CMOS SRAM AS7C31024 AS7C31024L Low voltage 128K×8 CMOS SRAM Common I/O Features • Organization: 131,072 words × 8 bits • Single 3.3 ±0.3V power supply • 5V tolerant I/O specification • High speed - 12/15/20/25/35 ns address access time

LS 4704

Abstract: free 4510 c4388 TI4510 pin diagram cmos 4510 PQFP100 xI32
Contextual Info: STi4500 STi4510 MPEG AUDIO DECODER . . . . . . . . . . . . ADVANCE DATA SINGLE-CHIP ISO/IEC 11172-3 LAYER I & II DECODER DECODES IN SINGLE CHANNEL, DUAL CHANNEL, STEREO OR JOINT STEREO MODES SUPPORTS ALL MPEG BIT RATES AT 32, 44.1 & 48kHz, AND FREE FORMAT AT 32 &

AS7C256-20JC

Abstract: AS7C256 taa 723 7C256-10 7C256-12 7C256-15 AS7C256L AS7C256-15PC 7C1024
Contextual Info: High Performance 32Kx8 CMOS SRAM AS7C256 AS7C256L 32K×8 CMOS SRAM Common I/O FEATURES • Organization: 32,768 words × 8 bits • Equal access and cycle times • High speed • Easy memory expansion with CE and OE inputs – 10/12/15/20/25/35 ns address access time

SS-39200-011

Abstract: 940-SP-3088R-A133 SS-37200-028 SNAGLESS BOOT SS-37000-007 450-015 diode B25 modular plug RJ45 SS-37000-006 SS-39100-008
Contextual Info: New Products Category 6 Shielded Component Compliant Plug SS-39200-011 – Plug with Snag-less Strain Relief • Designed for the highest reliability shield connection • Wire loading bar for ease of assembly • One step termination using tool kit 2980075-01

S45 SMD

Contextual Info: bel / defining a degree of excellen ce LOGIC DELAY MODULES HCMOS 5 TAP LEADING EDGE CONTROL S450 SERIES A450 SERIES j— 3 SPACES e 20 — 1 n a a n f .375 .350 o X - -j .015 .004 h il h hu—u it - 1 -n—u u .018 t j012Q .008 CGPLANARITY ± ,002