9726 Search Results

2n7615

Abstract: 2N761
Contextual Info: PD-97260A 2N7615U6 IRHLQ77214 250V, Quad N-CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT LCC-28 ™ TECHNOLOGY Product Summary Part Number IRHLQ77214 IRHLQ73214 Radiation Level RDS(on) 100K Rads (Si) 1.0Ω 300K Rads (Si) 1.0Ω ID 2.6A

IRF6641TR1PBF

Abstract: IRF6641TRPBF
Contextual Info: PD - 97262 IRF6641TRPbF DirectFET™ Power MOSFET ‚ Typical values unless otherwise specified RoHS Compliant  l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for High Performance Isolated Converter Primary Switch Socket

ir 429c

Abstract: AN-994 IRF1324S-7P 429AD 429C
Contextual Info: PD - 97263A IRF1324S-7PPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S VDSS RDS on typ. max. ID Benefits

Contextual Info: PD - 97262A IRF6641TRPbF DirectFET™ Power MOSFET ‚ Typical values unless otherwise specified l l l l l l l l l RoHS Compliant  Lead-Free (Qualified up to 260°C Reflow) Application Specific MOSFETs Ideal for High Performance Isolated Converter Primary Switch Socket

AN-994

Abstract: 5MAD IRF1324S-7PPBF 429AD High Efficiency Synchronous Rectification in SMPS IRF1324S-7P
Contextual Info: PD - 97263 IRF1324S-7PPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S VDSS RDS on typ. max. ID Benefits

AN-994

Abstract: ir 429c
Contextual Info: PD - 97263 IRF1324S-7PPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S VDSS RDS on typ. max. ID Benefits

Contextual Info: PD - 97269A IRGB4045DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • IC = 6.0A, TC = 100°C Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C

mascot 9726

Abstract: MIL-HDBK-217F 60601-1 D-88069 SP11 hella 9726-2026
Contextual Info: 9726-2026 Max. 96 W AC/DC SWITCH MODE POWER SUPPLIES 2026 - med / with Power Factor Correction PFC • Universal inngangsspenning • Medisinsk godkjenning, EN 60601-1 • 3 pins IEC 320 kontakt. • Nettledning vedlagt • Kortslutningssikker • Sekundærledning eller Hellakontakt

Contextual Info: PD - 97269A IRGB4045DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • IC = 6.0A, TC = 100°C Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C

MJ 15005 transistor

Abstract: ir 429c IRF 1640 IRF1324S AN-994 IRF1324S-7PPBF 7PPB
Contextual Info: PD - 97263 IRF1324S-7PPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S VDSS RDS on typ. max. ID Benefits

HEXFET SO-8

Abstract: IRF6641TR1PBF IRF6641TRPBF
Contextual Info: PD - 97262A IRF6641TRPbF DirectFET™ Power MOSFET ‚ Typical values unless otherwise specified l l l l l l l l l RoHS Compliant  Lead-Free (Qualified up to 260°C Reflow) Application Specific MOSFETs Ideal for High Performance Isolated Converter Primary Switch Socket

2n7632

Abstract: IRHLUC7670Z4 2N763
Contextual Info: PD-97268A 2N7632UC IRHLUC7670Z4 RADIATION HARDENED 60V, Combination 1N-1P-CHANNEL LOGIC LEVEL POWER MOSFET TECHNOLOGY ™ SURFACE MOUNT LCC-6 Product Summary Part Number Radiation Level IRHLUC7670Z4 100K Rads (Si) IRHLUC7630Z4 300K Rads (Si) RDS(on) ID 0.75Ω

Contextual Info: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS2401 Sep-97 9726 B2 CARSEM DM715208AEA 1.2µ OX/NI 03 TO-92 STRESS/JOB NO. Infant / High voltage Life 125°C, 7.0 V. P-20432, P-20478 READPOINT

LM137A

Abstract: smd 20w
Contextual Info: PD- 97267 Three Terminal, Adjustable Negative Voltage Regulator OM1325NM 1.5A Product Summary: Part Number Standard Military Drawing Number VIN Adjustable VOUT Package OM1325NM 7703406N -4.25V to -41.25V -1.2V to -37V SMD-1 SMD-1 These three terminal negative voltage regulators are

PD-97260

Abstract: IRHLQ73214 IRHLQ77214 2N7615U6 2n7615
Contextual Info: PD-97260 2N7615U6 IRHLQ77214 250V, Quad N-CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT LCC-28 ™ TECHNOLOGY Product Summary Part Number IRHLQ77214 IRHLQ73214 Radiation Level RDS(on) 100K Rads (Si) 1.0Ω 300K Rads (Si) 1.0Ω ID 2.6A

0234

Abstract: LTC1261 R320 9449
Contextual Info: RELIABILITY DATA LTC1261 / 1429 / 1430 / 1550 / 1551 / 3830 / 3831 / 3832 8/21/2006 • OPERATING LIFE TEST PACKAGE TYPE SAMPLE SIZE OLDEST DATE CODE SIDEBRAZE PLASTIC DIP SOIC/SOT/MSOP 116 9726 48 9526 709 9426 873 • PRESSURE COOKER TEST AT 15 PSIG, +121°C

Contextual Info: PD-97260A 2N7615U6 IRHLQ77214 250V, Quad N-CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT LCC-28 TECHNOLOGY ™ Product Summary Part Number IRHLQ77214 IRHLQ73214 Radiation Level RDS(on) 100K Rads (Si) 1.0Ω 300K Rads (Si) 1.0Ω ID 2.6A

2N763

Abstract: 2N7632UC IRHLUC7630Z4
Contextual Info: PD-97268 2N7632UC IRHLUC7670Z4 60V, Combination 1N-1P-CHANNEL RADIATION HARDENED TECHNOLOGY LOGIC LEVEL POWER MOSFET ™ SURFACE MOUNT LCC-6 Product Summary Part Number Radiation Level IRHLUC7670Z4 100K Rads (Si) IRHLUC7630Z4 300K Rads (Si) RDS(on) ID 0.75Ω

Contextual Info: PD - 97269 IRGB4045DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA

20306

Abstract: P-20306 P-20230
Contextual Info: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS1225AB Aug-97 9726 S DALLAS DA094689 N/A 28 MODULE STRESS/JOB NO. READPOINT Sample Size/No. of Fails Storage Life 85°C, No Bias P-20232 48 Hr

CI 4016

Abstract: TR400-6 400v 20A ultra fast recovery diode power Diode 400V 20A IRGB4045DPBF
Contextual Info: PD - 97269 IRGB4045DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA

20306

Abstract: P-20306 Analysis DS1225AB
Contextual Info: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS1225AB Aug-97 9726 S DALLAS DA094689 N/A 28 MODULE STRESS/JOB NO. READPOINT Sample Size/No. of Fails Storage Life 85°C, No Bias P-20232 48 Hr

DS17485

Abstract: P-21031
Contextual Info: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY DS17485 Nov-97 9726 A2 ANAM, K. STRESS/JOB NO. ASSEMBLY LOT NO DN713702AAC 0.8µ OX/NI 2 MTL READPOINT (Sample Size/No. of Fails) Preconditioning (P/C): 0 Hr Bake, 125°C, 24 Hr 250/0 Moisture Soak, 30°C/60% RH, 144 Hr

CARSEM

Abstract: DS2401
Contextual Info: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS2401 Sep-97 9726 B2 CARSEM DM715208AEA 0.8µ OX/NI 03 TO-92 STRESS/JOB NO. Infant / High voltage Life 125°C, 7.0 V. P-20432, P-20478 READPOINT