2N763 Search Results

IRHLA770Z4

Abstract: IRHLA7930Z4 IRHLA7970Z4 2n7630 2N763 97306 quad p-CHANNEL
Contextual Info: PD-97306 2N7630M2 RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE 14-LEAD FLAT PACK IRHLA7970Z4 60V, Quad P-CHANNEL ™ TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHLA7970Z4 100K Rads (Si) 1.36Ω -0.56A IRHLA7930Z4 300K Rads (Si)

transistor bf 175

Contextual Info: 2N7638-GA Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 250 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch

Contextual Info: 2N7637-GA Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •         RoHS Compliant 250 °C maximum operating temperature Temperature independent switching performance Electrically isolated base-plate

Contextual Info: 2N7635-GA Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •         RoHS Compliant 250 °C maximum operating temperature Temperature independent switching performance Electrically isolated base-plate

2n7633

Abstract: IRF N-Channel Power MOSFETs IRHLA7630Z4 IRHLA7670Z4 2N763
Contextual Info: PD-97251 2N7633M2 IRHLA7670Z4 60V, Combination 2N-2P-CHANNEL RADIATION HARDENED TECHNOLOGY LOGIC LEVEL POWER MOSFET ™ THRU-HOLE 14-LEAD FLAT PACK Product Summary Part Number Radiation Level IRHLA7670Z4 100K Rads (Si) IRHLA7630Z4 300K Rads (Si) RDS(on) ID

IRHLF770Z4

Contextual Info: PD-94685E 2N7631T2 IRHLF7970Z4 60V, P-CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE TO-39 TECHNOLOGY ™ Product Summary Part Number Radiation Level RDS(on) ID IRHLF7970Z4 100K Rads (Si) 1.35Ω -1.5A IRHLF7930Z4 300K Rads (Si) 1.35Ω -1.5A

2n7632

Abstract: IRHLUC7670Z4 2N763
Contextual Info: PD-97268A 2N7632UC IRHLUC7670Z4 RADIATION HARDENED 60V, Combination 1N-1P-CHANNEL LOGIC LEVEL POWER MOSFET TECHNOLOGY ™ SURFACE MOUNT LCC-6 Product Summary Part Number Radiation Level IRHLUC7670Z4 100K Rads (Si) IRHLUC7630Z4 300K Rads (Si) RDS(on) ID 0.75Ω

2N7638-GA SPICE

Abstract: high-temperature-sic-junction-transistors
Contextual Info: 2N7638-GA Section VII: SPICE Model Parameters Please copy this code from the SPICE model PDF file on our website into LTSPICE (version 4) software for simulation of the 2N7638-GA. * MODEL OF GeneSiC Semiconductor Inc.

2N7637-GA SPICE

Abstract: high-temperature-sic-junction-transistors
Contextual Info: 2N7637-GA Section VII: SPICE Model Parameters Please copy this code from the SPICE model PDF file on our website into LTSPICE (version 4) software for simulation of the 2N7637-GA. * MODEL OF GeneSiC Semiconductor Inc.

2N7635-GA SPICE

Abstract: high-temperature-sic-junction-transistors
Contextual Info: 2N7635-GA Section VII: SPICE Model Parameters Please copy this code from the SPICE model PDF file http://www.genesicsemi.com/images/ hit_sic/sjt/2N7635-GA_SPICE.pdf into LTSPICE (version 4) software for simulation of the 2N7635-GA. * MODEL OF GeneSiC Semiconductor Inc.

Contextual Info: 2N7635-GA Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •         RoHS Compliant 250 °C maximum operating temperature Temperature independent switching performance Electrically isolated base-plate

Contextual Info: 2N7636-GA Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 250 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch

2N7639-GA SPICE

Contextual Info: 2N7639-GA Section VII: SPICE Model Parameters Please copy this code from the SPICE model PDF file on our website into LTSPICE (version 4) software for simulation of the 2N7639-GA. * MODEL OF GeneSiC Semiconductor Inc.

2n2222 spice model

Contextual Info: 2N7637-GA Normally – OFF Silicon Carbide Junction Transistor VDS = 600 V RDS ON = 170 mΩ ID (Tc = 25°C) = 20 A hFE (Tc = 25°C) = Features Package •           RoHS Compliant 225°C maximum operating temperature Electrically Isolated Base Plate

2N763

Contextual Info: PRELIMINARY PD-97191B 2N7635M1 IRHLG7670Z4 60V, Combination 2N-2P-CHANNEL RADIATION HARDENED TECHNOLOGY LOGIC LEVEL POWER MOSFET ™ THRU-HOLE MO-036AB Product Summary Part Number Radiation Level IRHLG7670Z4 100K Rads (Si) IRHLG7630Z4 300K Rads (Si) RDS(on)

Contextual Info: PRELIMINARY PD-97191B 2N7635M1 IRHLG7670Z4 60V, Combination 2N-2P-CHANNEL RADIATION HARDENED TECHNOLOGY LOGIC LEVEL POWER MOSFET ™ THRU-HOLE MO-036AB Product Summary Part Number Radiation Level IRHLG7670Z4 100K Rads (Si) IRHLG7630Z4 300K Rads (Si) RDS(on)

2N763

Abstract: 2N7632UC IRHLUC7630Z4
Contextual Info: PD-97268 2N7632UC IRHLUC7670Z4 60V, Combination 1N-1P-CHANNEL RADIATION HARDENED TECHNOLOGY LOGIC LEVEL POWER MOSFET ™ SURFACE MOUNT LCC-6 Product Summary Part Number Radiation Level IRHLUC7670Z4 100K Rads (Si) IRHLUC7630Z4 300K Rads (Si) RDS(on) ID 0.75Ω

Contextual Info: 2N7636-GA Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 250 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch

2n7631

Abstract: 2N7631T2 IRHLF7970Z4 IRHLF770Z4 IRHLF7930Z4 2N763
Contextual Info: PD-94685D 2N7631T2 IRHLF7970Z4 60V, P-CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE TO-39 TECHNOLOGY ™ Product Summary Part Number Radiation Level RDS(on) ID IRHLF7970Z4 100K Rads (Si) 1.25Ω -1.6A IRHLF7930Z4 300K Rads (Si) 1.25Ω -1.6A

Contextual Info: 2N7637-GA Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •         RoHS Compliant 250 °C maximum operating temperature Temperature independent switching performance Electrically isolated base-plate

Contextual Info: PD-94685E 2N7631T2 IRHLF7970Z4 60V, P-CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE TO-39 TECHNOLOGY ™ Product Summary Part Number Radiation Level RDS(on) ID IRHLF7970Z4 100K Rads (Si) 1.35Ω -1.5A IRHLF7930Z4 300K Rads (Si) 1.35Ω -1.5A

MO-03

Contextual Info: PD-97191A 2N7635M1 IRHLG7670Z4 60V, Combination 2N-2P-CHANNEL RADIATION HARDENED TECHNOLOGY LOGIC LEVEL POWER MOSFET ™ THRU-HOLE MO-036AB Product Summary Part Number Radiation Level IRHLG7670Z4 100K Rads (Si) IRHLG7630Z4 300K Rads (Si) RDS(on) ID 0.6Ω

2N7635M1

Abstract: IRHLG7630Z4 IRHLG7670Z4 MO-036AB MO036 2N763
Contextual Info: PD-97191B 2N7635M1 IRHLG7670Z4 60V, Combination 2N-2P-CHANNEL RADIATION HARDENED TECHNOLOGY LOGIC LEVEL POWER MOSFET ™ THRU-HOLE MO-036AB Product Summary Part Number Radiation Level IRHLG7670Z4 100K Rads (Si) IRHLG7630Z4 300K Rads (Si) RDS(on) ID 0.6Ω

Contextual Info: 2N7635-GA Normally – OFF Silicon Carbide Junction Transistor Features Package •           RoHS Compliant 225°C maximum operating temperature Electrically Isolated Base Plate Gate Oxide Free SiC Switch Exceptional Safe Operating Area