2N7635 Search Results
2N7635 Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| 2N7635-GA | GeneSiC Semiconductor | FETs - Single, Discrete Semiconductor Products, TRANS SJT 650V 4A TO-257 | Original | 6 | |||
| 2N7635M1 | International Rectifier | 60V 100kRad Hi-Rel Dual 2N 2P Channel TID Hardened MOSFET in a 14-Lead Flat Pack package; QPL part number related to IRHLG7670Z4 | Original | 312.57KB | 16 |
2N7635 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: 2N7635-GA Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package • RoHS Compliant 250 °C maximum operating temperature Temperature independent switching performance Electrically isolated base-plate |
Original |
2n7635-ga2n763522e-4791e-27+3 | |
2N7635-GA SPICE
Abstract: high-temperature-sic-junction-transistors
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Original |
2n7635-gasic/sjt/2n7635-ga12-dec-20142n7635+7 | |
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Contextual Info: 2N7635-GA Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package • RoHS Compliant 250 °C maximum operating temperature Temperature independent switching performance Electrically isolated base-plate |
Original |
2n7635-ga2n763522e-4791e-27+3 | |
2N763Contextual Info: PRELIMINARY PD-97191B 2N7635M1 IRHLG7670Z4 60V, Combination 2N-2P-CHANNEL RADIATION HARDENED TECHNOLOGY LOGIC LEVEL POWER MOSFET THRU-HOLE MO-036AB Product Summary Part Number Radiation Level IRHLG7670Z4 100K Rads (Si) IRHLG7630Z4 300K Rads (Si) RDS(on) |
Original |
pd-97191b2n7635m1irhlg7670z4mo-036ab+4 | |
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Contextual Info: PRELIMINARY PD-97191B 2N7635M1 IRHLG7670Z4 60V, Combination 2N-2P-CHANNEL RADIATION HARDENED TECHNOLOGY LOGIC LEVEL POWER MOSFET THRU-HOLE MO-036AB Product Summary Part Number Radiation Level IRHLG7670Z4 100K Rads (Si) IRHLG7630Z4 300K Rads (Si) RDS(on) |
Original |
pd-97191b2n7635m1irhlg7670z4mo-036ab+3 | |
MO-03Contextual Info: PD-97191A 2N7635M1 IRHLG7670Z4 60V, Combination 2N-2P-CHANNEL RADIATION HARDENED TECHNOLOGY LOGIC LEVEL POWER MOSFET THRU-HOLE MO-036AB Product Summary Part Number Radiation Level IRHLG7670Z4 100K Rads (Si) IRHLG7630Z4 300K Rads (Si) RDS(on) ID 0.6Ω |
Original |
pd-97191a2n7635m1irhlg7670z4mo-036ab+4 | |
2N7635M1
Abstract: IRHLG7630Z4 IRHLG7670Z4 MO-036AB MO036 2N763
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Original |
pd-97191b2n7635m1irhlg7670z4mo-036ab+5 | |
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Contextual Info: 2N7635-GA Normally – OFF Silicon Carbide Junction Transistor Features Package • RoHS Compliant 225°C maximum operating temperature Electrically Isolated Base Plate Gate Oxide Free SiC Switch Exceptional Safe Operating Area |
Original |
2n7635-ga2n76358338e-480733e-26+3 |