43506 Search Results

KYS 30 40 diode

Abstract: 40n60 transistor mos 30N60 2355Z wiom DC IXYS 30N60 of ic 3915 1XYS 30N60T 35N100
Contextual Info: MbE 4bôb22b D I X Y S OGQQÔTM T H IX Y CORP □IXYS Data Book NO.91560A October 1991 "S" Series MOSIGBTs High Short Circuit SOA Insulated Gate Bipolar Transistor Features Guaranteed Short Circuit Capability SCSOA Low Input Capacitances Optimized for 60Hz to 30kHz Switching

Diode SY 356

Abstract: DI 783
Contextual Info: I X Y S CORP IDE DI 4bflbS2b OGODBTS 3 | □IXYS 7 ^ 3 - r- a 7 ADVANCED TECHNICAL DATA SHEET* kTM MOSBLOC MAXIMUM RATIN G S DATASHEET NO. 41014A IGBT MODULE IXGQ 50N 90Y4 Te = 25 °C unless otherwise Indicated Conditions Rating Collector-Emitter Voltage

IXGH20N50

Abstract: ixgh20n50u1 rectifier d 355 n 2000 ic 3404A
Contextual Info: I X Y S CORP 1ÖE D • ODOObTS 4 ■ T - 3 V 13 □IXYS A D V A N C E T E C H N IC A L D A TA S H E E T Data Sheet No. 3404A _ MOS1GBT with Anti-Parallel Rectifier March 1989 PART NUMBER IXGH20N50U1 F E A T U R E S :_

60N50

Abstract: ixys 60n50 60N60 3501A
Contextual Info: I X y S CORP 1ÛE D • MbflbSSfci 0000701 b ■ Datasheet#: 3501A □ I X Y H ,G H S December 1988 IXGH60N50,60 CURRENT MOSIGBT ADVANCE DATA SHEET* ~ r - 3 ° i- i5 MAXIMUM RATINGS Parameter Sym. IXGH60N50.50A Collector-Emitter Voltage 1 VCES 500 600 Vdo

Contextual Info: I X Y S CORP 10E D | Mbfl taEb 0 0 0 0 3 T 7 7 | □IXYS ADVANCED TECHNICAL DATA SHEET* DATA SHEET NO. 41013A MOSBLOC IGBT MODULE IXGQ75N90Y4 MAXIMUM RATINGS T c = 25 °C unless otherwise indicated Conditions Rating Value Symbol Unit Collector-Emitter Voltage

Contextual Info: I X Y S CORP n i x Y 10 E D I 4batrS2b 0000307 4 | S ADVANCED TECHNICAL DATA SHEET* .TM M O SBLO C DATA SH EET NO. 41007C IXGQ50N60Y4 IG BT M O D U L E MAXIMUM RATINGS Tc = 25 °C unless otherwise indicated Conditions Rating Symbol Value Unit Collector-Emitter Voltage

10N03

Abstract: 06N03 VU050-12N03 04n03 14n03 VU050-16N03 VU050-08N03 IT5 rectifier 16N03 12n03
Contextual Info: MbE D • 4 h ñ b 25 b 0 0 G 1 25 5 3 H I X Y I X Y S CORP 'T-Z.SiQ^ g m -< n TYYS k_J Data Sheet No. 911004A - November 1991 Three-Phase Diode Rectifier Bridge VU050 FEATURES:_ • Isolated Direct Copper Bond Base Plate

TO-238

Abstract: sn 8400
Contextual Info: I X Y S 1ÔE CORP OOOOtaSS D 5 'T - Z ° \ A S> □IXYS A D V A N C E TEC H N IC AL DATA SH EET* December 1988 DATA SH EET NO. 1300C HiPerFET Power MOSFETs IXFN100N10 N-Channel High dv/dt, Lowtrr, H D M O S™ Family FEATURES:_

MT 1198 AE

Abstract: 4bob M5Y4
Contextual Info: I X Y S IDE CORP D | HbflbÈSb 00003ÔT fl ~ r- 3 s r ^ J IXYS ADVANCED TECHNICAL DATA SHEET* „TM MOSBLOC DATA SHEET NO. 41006C IGBT MODULE IXGQ75N60Y4 MAXIMUM RATINGS Te = 25 °C unless otherwise Indicated Conditions Rating Collector-Emitter Voltage Symbol

VB025-16A02

Abstract: VB025-16N02 DIODE RECTIFIER BRIDGE VB025-12N02 VB025-06N02 16A02 E72873M VB025 GG01
Contextual Info: HbE D • t4 b ô b 2 5 b GG01S73 S MIXY I X Y S CORP □IXYS November 1991 Datasheet No. 911013A Single-Phase Diode Rectifier Bridge VB025 • Avalanche Rated Parts Available ■ Isolated Direct Copper Bond Base Plate

TO-238

Abstract: vdo 007 dss100v IXFN100N10 HiperFET 013Q
Contextual Info: X X 1ÖE D Y S CORP 4fc>öb22fc. G O G G b a S S □IXYS ADVANCE TECHNICAL DATA SHEET* December 1988 DATA SHEET NO. 1300C HiPerFET Power MOSFETs IXFN100N10 N-Channel High dv/dt, Lowtrr, HDMOS™ Family FEATURES:_ 100A

IP PHONE

Abstract: GU10 aurora gu10 pbx central exchange free fxs interface integrated circuit
Contextual Info: ™ Phone/Fax IP Gateway Complete Voice and Fax Integration Over IP Networks ® The Voice of Networking ™ ™ V/IP PHONE/FAX IP GATEWAY Bringing Voice to IP Networks Internet Protocol IP networks are the lifeline of corporate data communications. From e-mail to complex data management, the

D-6840

Abstract: D6840 TXYS 91S50B IC-9017 c10006 d684
Contextual Info: □IXYS PRELIMINARY TECHNICAL INFORMATION Data Sheet No 91S50B July 1992 HIGH VOLTAGE "S" Series MOSIGBT IX S H 1 7 N 1 0 0 ,1 0 0 A Improved S C SO A Capability IX S M 1 7 N 1 0 0 ,1 0 0 A Part Number •

2675000101

Abstract: 6B40 bridge diode IXBD4410PC schematic diagram inverter 12v to 5v 30a ic driver mosfet 8 pin 4413 ic 4410 8pin schematic diagram 24v UPS 1XBD4410 schematic diagram inverter 24V to 12v 30a schematic diagram welding inverter full bridge
Contextual Info: 4bE D • I MbôbEEb 000105Ö 1 H IX Y X Y S CORP □IX Y S PRELIMINARY INFORMATION* Data Sheet No. 91503A October 1991 ISOSMART HALF BRIDGE DRIVER CHIPSETS IXBD4410 / IXBD4411 / IXBD4412 / IXBD4413 Features 1200V or Greater Low- to High-Side Isolation.

schematic diagram UPS ica

Abstract: optocoupler TLP 250 TLP250 MOSFET DRIVER application note schematic diagram UPS inverter three phase IXDP630PC TLP250 MOSFET DRIVER TLP250 mosfet gate Driver schematic diagram 48 volt UPS ups high power FET Transistor IXDP630PI
Contextual Info: □IXYS Data Sheet No. 9 1560B October 1991 INVERTER INTERFACE & DIGITAL DEADTIME GENERATOR for 3-PHASE PWM Controls IXDP630 / IXDP631 Features R eplaces 10-12 Standard SSI/MSI Logic Devices Allows a Wide Range of PWM Modulation Strategies Directly Drives High Speed Optocouplers

04N03

Abstract: VU030-16N03 10N03 VU030-08N03 14n03 VU030-14N03 12n03 VU030-06N03 D-6840 VU030-04N03
Contextual Info: MbE D • 4bôb2Sb 0GG1SS3 I X Y S CORP □IXYS T «IXY ''T*2-Vo*7 Data Sheet No. 910003A November 1991 Three-Phase Diode Rectifier Bridge VU030 FEATURES:_ • Isolated Direct Copper Bond Base Plate • Easy C hassis Mounting

Contextual Info: □IXYS PRELIMINARY TECHNICAL INFORMATION Datasheet No 91550B July 1992 IXSH17N100,100A HIGH VOLTAGE "S" Series MOSIGBT Improved SCSOA Capability IXSM17N100,100A P a rt N u m b e r • Guaranteed Short Circuit SO A Capability

IXDP630 application note

Abstract: IXDP630
Contextual Info: □IXYS Data Sheet No. 91560B October 1991 INVERTER INTERFACE & DIGITAL DEADTIME GENERATOR for 3-PHASE PWM Controls IXDP630 / IXDP631 Features 5 Volt H C M O S Logic Im plem entation M aintains Low P o w er a t High S p ee d R e p la c e s Devices 1 0 - 1 2 S ta n d a r d S S I/M S I Logic

MT 1198 AE

Contextual Info: I X Y S CÔRD ID E DIXYS ADVANCED TECHNICAL DATA SH EET* D | 4töt,?21n □ □ 0037ci S | DATA SHEET NO. 4I011B IXGQ50N50Y4 MOSBLOC IGBT MODULE MAXIMUM RATINGS Tc = 25 °C unless otherwise Indicated Unit Symbol Value Collector-Emitter Voltage VcES 500

irf250 dc motor

Abstract: IRF250 ic data
Contextual Info: 4686226 I X Y S CORP 03 4t.0L.22Li □ 0 D 0 2 D f l ¡j □ □IXYS TECHNICAL DATA SHEET August 1988 DATA S H E E T NO. 1002A IRFC250 High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series V BR DSS • • . . 200V 0.085a

IXGH10N50U1

Abstract: icao IXGH10N50
Contextual Info: I X Y S CORP lfiE D 4t a b S 2 b oooobci3 □ □IXYS ADVANCE TECHNICAL DATA SHEET* March 1989 PART NUMBER Data Sheet No. 3400A M O SIGBT with Anti-Parallel Rectifier IXGH10N50U1 • High Voltage MOSIGBT and Anti-Parallel Rectifier in One Package

Contextual Info: I x Y s CORP ID E D | 4L,flfe.*E2b DOOD4D3 =1 | □IXYS ADVANCED TECHNICAL DATA SHEET* DATA SHEET NO. 41002D _ IXGQ75N100Y4 MOSBLOC IGBT MODULE MAXIMUM RATINGS T c = 25 °C unless otherwise Indicated Conditions

MOSFET IRF150

Abstract: 2N6764 2N6763 IRFC150
Contextual Info: 4686226 I X Y S CORP D3 ]>e J MbfltE2t. □□□□SDb 7 "J- □IXYS TECHNICAL DATA SHEET DATA SHEET NO. i _August 1988 IRFC150 High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series

Contextual Info: NOTE S: I. 2. TH I RD A N G L E PROJ. MA T E R I A L S AND F I N I S H S : BODY: Z I N C D I E - C A S T , GOLD P L AT E D CONTACT: BRASS, GOLD PL AT E D I NS UL AT OR: T F E FLUOROCARBON ELECTRICAL: A. I MPEDANCE: B. F RE QUE NCY C. DIELECTRIC D. INSULATION