TXYS Search Results

IXGR32N60CD1

Contextual Info: □ TXYS HHifl JLæ* 3k. X HiPerFAST IGBT with Diode ISOPLUS247™ IXGR 32N60CD1 = 600 V = 45 A = 2.1 V = 55 ns V,CES IC25 V CE SAT typ ^fi(typ) (Electrically Isolated Backside) Preliminary data sheet Symbol TestC onditions V C ES Tj = 25°C to 150°C 600

ixys ml 075

Abstract: TXYS aj 312
Contextual Info: HiPerFET Power MOSFETs IXFH26N50Q IXFT26N50Q VD S S ^D25 trr <250 ns N-Channel Enhancement Mode AvalancheRated Low Qg,High dv/dt vDSS VDGR Vss vGSM Test Conditions Maxim um R atings Tj = 25°C to 150°C 500 V TJ = 25°C to 150°C; RGS= 1 MO 500 V Continuous

10M45s

Abstract: IXCP10M45S 78L05 D-PAK of 78l05 TL 78l05 78L05 TO-220 IXCP35M35
Contextual Info: High Voltage Current Regulators C urrent Regulator Non switchable regulators BV*DS *0 P min. typ. V mA 350 10 20 35 Switchable regulators 450 TO-251 AA TO -220 AB TO -252 AA ,2 ’ - 0 12 3 3 IXCP 10M 35 IXCP 20M 35 IXCP 35M 35 IXCU 10M35 IXCU 20M 35 IXC U 35M35

D-6840

Abstract: D6840 TXYS 91S50B IC-9017 c10006 d684
Contextual Info: □IXYS PRELIMINARY TECHNICAL INFORMATION Data Sheet No 91S50B July 1992 HIGH VOLTAGE "S" Series MOSIGBT IX S H 1 7 N 1 0 0 ,1 0 0 A Improved S C SO A Capability IX S M 1 7 N 1 0 0 ,1 0 0 A Part Number •

lm 6492

Abstract: 64CA t76a
Contextual Info: G:CGDF 8DCHFDAA:F GNUYVX LVUZXVSSNX .6/ 8V[UZNX a;NJZ[XNY ;px~xv0tu~x 1/x ,y XXWVYYWsbc ;px~xv0tu~x 1/x ,y lnlS nln |+-10 ;bu~x 0, w.|2x ~,tw/ 1- 0, ZbS Y\Wsbc 3|0{ -.,4|*|05 /x+/,. ,. -{,0, /x+/,. |+-10 ;c,+2x+|x+0 0, *,1+0 ,+ p,v}x0 u5 -~1z |+ 05-x ;m10-10 .x~t5 3|0{ u,0{ lm t+w lc v,+0tv0/

duobinary encoder

Contextual Info: MOTOROLA — SEMICONDUCTOR TECHNICAL DATA MC68184 Technical Sum m ary Broadband Interface Controller The MC68184 broadband interface controller BIC is a high-performance inter­ face device for use with the MC68824 token bus controller (TBC) to implement

MC68824

Abstract: duobinary encoder M68000 MC68184 SMIND
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC68184 Technical Sum m ary Broadband Interface Controller The MC68184 broadband interface controller BIC is a high-performance inter­ face device for use with the MC68824 token bus controller (TBC) to implement the digital portion of the physical layer of a broadband IEEE 802.4 token bus

Contextual Info: □ IXYS H H ifl JL æ* X IXGH 32N60CD1 HiPerFAST IGBT with Diode VCES I C25 VCE SAT typ tf1(typ) Light Speed Series V A V ns 600 60 2.1 55 Preliminary data sheet Maximum Ratings Symbol Test Conditions V CES T j = 25°C to 150°C 600 V V CGR T j = 25°C to 150°C; RGE = 1 M£i

D-6840

Abstract: transistor BD 441 IXBD 4413 efu dual mosfet POB11SO BD4410PI 4410PI ixys vco 52 full bridge igbt induction heating generator 2675000101
Contextual Info: 4bE D • Mb ô b E E b I X Y S 000105Ö 1 H IX Y CORP □IXYS T ’- S Z . H V ^ O PRELIM INARY INFORMATION* Data Sheet No. 91503A October 1991 ISOSMART HALF BRIDGE DRIVER CHIPSETS IXBD4410 / IXBD4411 / IXBD4412 / IXBD4413 Features 1200V o r Greater Low- to High-Side Isolation.

1XFH12n100

Abstract: transistor 13n80
Contextual Info: MbE D • 4bflb22b G O D D E S S 4 HIXY I X Y S CORP T - l V l S □IXYS Data Sheet No. 91532A October 1991 HiPerFET POWER MOSFETs N-Channel, High dv/dt, Low trr, HDMOS™ Fam ily C haracteristics Features * Low RDS{on HDMOS™ Process • Rugged Polysilicon Gate Ceil Structure

Contextual Info: □ IX Y S Advanced Technical Information Low VrP/ . IGBT u t s a t with Diode . ISOPLUS247 OES _ _ . ^025 ” 75 A ^ C E (s a t) ” 1-7 V (Electrically Isolated Back Surface) Symbol TestC onditions V v CGR Tj Tj V v GEM ^C25 ^C100 ^CM Maximum Ratings

Servo motor control using microcontroller 8051

Abstract: 6A40 CT Dc servo motor
Contextual Info: n U T W C 1 .A . I O PRELIM INARY TECHN IC AL INFORMATION* Data Sheet No. 91600B October 1991 Bus Compatible Digital PWM Controller IX D P 6 1 0 FEATURES Microcomputer bus compatible Two complementary outputs for direct control of a switching power bridge

40n60 transistor

Abstract: 30N60 40n60 30N60A 40n60 igbt 17N10 wiom DC transistor JE 1090 20N60A igbt equivalent to 40n60
Contextual Info: MbE D • Mb S b S E b OO O O S T M T «IXY I X V S CORP T □IX Y S I V I S Data Book NO.91560A October 1991 "S" Series MOSIGBTs High Short Circuit SOA Insulated Gate Bipolar Transistor Features • • • Guaranteed Short Circuit Capability SCSOA Optimized for 60Hz to 30kHz Switching

1XGH24N60A

Abstract: b236 b237 TXYS IXGH/24N60A
Contextual Info: inixYS HiPerFAST IGBT V CES IXGH 24N60A ^C25 v * CE sat l fi Symbol Test Conditions 4 Maximum Ratings VCES Tj = 25°C to 150°C 600 VCGR Tj = 25°C to 150°C; RGE = 1 MQ 600 V v GES v GEM Continuous ±20 V T ransient ±30 V ^C25 Tc -2 5«C 48 A ^090 Tc =90°C