41870 Search Results

BC337 noise

Contextual Info: I T T CO R P / I T T CMPNTS 41E D B 4bñ2bñ4 OGGlMOl 2 • ITO - - p - 3 \ - c t O " “ NPN TRANSISTORS NPN Silicon Transistors with plastic package 10D3 according to DIN 41870 =TO-92 . On special request, these transistors will also be produced with TO-18 pin configuration.

Contextual Info: SIEMENS SFH 212 SILICON PHOTODIODE VERY LOW DARK CURRENT FEATURES Maximum Ratings * Package: 18 A3 DIN 41870 T 018 , Glass Lens, Hermetically Sealed, Solder Tabs, Lead Spacing 0.1 * (2.54 mm) Operating and Storage Temperature Range (T0P Ts tg ) -4 0 " to +80“C

Contextual Info: SFH 216 SIEMENS SILICON PIN PHOTODIODE FEATURES Maximum Ratings * Package: 18 A3 DIN 41870 T018 , Glass Lens, Hermetically Sealed, Solder Tabs, Lead Spacing 0.1 ' (2.54 mm) O perating and Storage Tem perature Range (T0P T stg ) . - 40" 10 +80"C

Siemens photodiode visible light

Abstract: SFH 212 T018 T-2856
Contextual Info: SIEMENS AKTIEN6ESELLSCHAF 47E D 0235b05 002?4b7 T • S I E G SIEMENS SFH 212 SILICON PHOTODIODE VERY LOW DARK CURRENT FEATURES Maximum Ratings * Package: 18 A3 DIN 41870 TO18 , G lass Lens, Hermetically Sealed Package, Solder Tabs, Lead Spacing 2.54 mm (1/«0

SMD BOOK

Abstract: smd 842 SMD Packages TQFP Package 44 lead 20B40 P-MQFP-44-2 P-MQFP-144-1 SMD Devices smd transistor marking 26 MARKING BOOK
Contextual Info: Package Outlines Plastic Package, P-DIP-40 Plastic Dual In-Line Package 20B40 DIN 41870 T10 Plastic Package, P-LCC-28-1 (Plastic Leaded Chip Carrier) – SMD Plastic Package, P-LCC-44-1 (Plastic Leaded Chip Carrier) – SMD Plastic Package, P-LCC-68 (Plastic Leaded Chip Carrier) – SMD

10D3

Abstract: 1G14 C 337-40
Contextual Info: NPN TRANSISTORS ITT SEMICOND/ INTERMET ALL 3ME D • 4böH711 0002443 5 ■ ISI T - 3 i - o \ NPN Silicon Transistors with plastic package 10D3 according to DIN 41870 ='TO-92 . On special request, these transistors will also be produced with TO -18 pin configuration.

BC250A

Contextual Info: PNP TRANSISTORS ITT SEP1IC0ND/ INTERMET ALL 3ME D MbfiSTll QQQ5MM5 L, ISI 7 - 3 l - o i PN P Silico n Transistors with plastic package 10D3 according to DIN 41870 =»TO-92 . On special request, these transistors w ill also be produced with TO-18 pin configura­

BC856B TO-92

Contextual Info: I T T CORP/ I T T CHPNTS MIE II • Mt82bflM OQOiMOa 4 ■ IT O PNP TRAN SISTO RS PNP Silicon Transistors with plastic package 10D3 according to DIN 41870 -TO-92 . On special request, these transistors will also be produced with TO-18 pin configura­ tion.

BC170C

Abstract: BC170B "bc170c"
Contextual Info: 4 68 4 9 5 5 I T T SEMICONDUCTORS_ NPN TRANSISTORS a? de| 87D 02320 ¿7 - D 2 ^/ □ □ □5 3 e d 3 f mlsmtss NPN Silicon Transistors with plastic package 10D3 according to DIN 41870 -TO-92 . On special request, these transistors will also be produced with TO-18 pin configura­

Contextual Info: SIEMENS SFH 212 SILICON PHOTODIODE VERY LOW DARK CURRENT FEATURES Maximum Ratings • Package: 18 A3 DIN 41870 T 018 , Glass Lens, Hermetically Sealed, Solder Tabs, Lead Spacing 0.1* (2.54 mm) O perating and Storage Tem perature R ange (T0 p, Ts tg ) - 4 0 " to +80°C

Contextual Info: SFH483 SIEMENS FEATURES • Highly efficient GaAIAs LED • Anode electrically connected to case • High pulse power • High reliability • DIN humidity category per DIN 40040 GOG • Matches BPX63, BP103, LD242, SFH464, photodetectors • Package - TO -18,18 A3 DIN 41870

siemens THY M 75 A

Abstract: siemens thy 5224
Contextual Info: S IE M E N S TLE 5224 G Smart Two Channel Low-Side Switch Features • Power limitation • Thermal shutdown • Overload protection • Short circuit protection • Diagnostic feedback • Overvoltage protection • |jC compatible input • Electrostatic discharge ESD protection

Contextual Info: S IE M E N S Silizium-Fotodiode mit sehr kleinem Dunkelstrom Silicon Photodiode with Very Low Dark Current SFH 212 Maße in mm, w enn nicht anders angegeben/D im ensions in mm, unless otherwise specified. Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im

Contextual Info: SIEMENS TUA 601 OX preliminary IC-SPECIFICATION TV Mixer-Oscillator-PLL for 1.1 GHz page Contents 1 Functional Description, Application 2 3-4 Pin Defintion and Function 5 Block Diagram Circuit Description 6-10 Pinning, Package 11 Absolute Maximum Ratings 12

Contextual Info: SIEMENS SFH 219 SILICON PHOTODIODE VERY LOW DARK CURRENT Package Dimensions in Inches mm .100 (2 54) .149(3 8) '.138(3.5) Anode r 0.018(0.45) » 0.185(4.7) 0.181 (4.6) .570 (14.5) .491 (12 5) , 106 X Radiant . sensitive area \ ‘ - 'i 216 (5.5) .208 (5.3)

Contextual Info: SIEMENS GaAIAs-IR-Lumineszenzdiode GaAIAs Infrared Emitter 2.7 00.45 SFH 483 Chip position A CO 1 -; o o 3.6 ‘i 1.0 Anode LD 242, BPX 63, SFH 464 Cathode (SFH 483) Approx. weight 0.5 g IO C\J CO CO o M aße in mm, wenn nicht anders angegeben/D im ensions in mm, unless otherwise specified.

Contextual Info: U l FS 01/89 SIEMENSAG prelim inary IC-SPECIFICATION PMB2210 Table of Contents GSM-Modulator Table of Contents Page A. 1 Functional Description, Application Page B 2 .5 Block Diagramm Page D 6 .7 Pin Assignment Page E.8 Pin Description Page F.9 Package Outline

Contextual Info: Silizium-PIN-Fotodiode Silicon PIN Photodiode Lead Pb Free Product - RoHS Compliant BPX 65 Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 350 nm bis 1100 nm • BPX 65: Hohe Fotoempfindlichkeit • Hermetisch dichte Metallbauform (TO-18),

em 483

Contextual Info: SIEMENS SFH 483 GaAIAs-IR-Lumineszenzdiode GaAIAs Infrared Emitter 0 0 .4 5 2.7 r * - C h ip position 3.6 Anode LD 242, BPX 63, SFH 4 6 4 Cathode (SFH 4 8 3 ) A p p ro x. weight 0 .5 g Maße in mm, w enn nicht anders angegeben/D im ensions in mm, unless otherw ise specified.

Siemens Aktiengesellschaft

Contextual Info: Package Outlines Siemens Aktiengesellschaft 245 Summary of Package Outlines Memory Components Siemens Aktiengesellschaft 246 Summary of Package Outlines Siemens Aktiengesellschaft 247 Summary of Package Outlines Memory Modules Siemens Aktiengesellschaft 248

foto sensor

Abstract: BPX-65 foto transistor Q62702-P80 Q62702-P27
Contextual Info: BPX 65 BPX 66 Silizium-PIN-Fotodiode Silicon PIN Photodiode BPX 65 BPX 66 Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale ● Speziell geeignet für Anwendungen im Bereich von 350 nm bis 1100 nm ● BPX 65: Hohe Fotoempfindlichkeit

1485A-C2

Abstract: M115-CA001 1492-DN3TW DNET-UM072C-EN-P 1485A-T1E4 Allen-Bradley schematic 1492-dn3tw 1787-DNPS Allen-Bradley 1485C DeviceNet cable 1485T-P2T5-T5 1485A-T1M5
Contextual Info: DeviceNet Media Design and Installation Guide Important User Information Solid state equipment has operational characteristics differing from those of electromechanical equipment. Safety Guidelines for the Application, Installation and Maintenance of Solid State Controls Publication SGI-1.1 available from your local

diode sy 170/10

Abstract: TLE5224 ENA1530 TLE522
Contextual Info: SIEM EN S TLE 5224 G2 Smart Two Channel Low-Side Switch Features Product Summary > Power limitation • Overtemperature monitoring • Overload protection • Short circuit protection • Diagnostic feedback • Overvoltage protection • |jC compatible input

uvc3130

Abstract: itt switch ITT Intermetall diode
Contextual Info: UVC 3130 High-Speed A/D-D/A Converter 6251-306-1E ITT Semiconductors -L_ L_ L i UVC 3130 H igh-Speed A /D -D /A Converter - a high-speed flash type 8-bit A/D converter Separate clock inputs are provided for the A/D converter and the D/A converter thus enabling the application of time