40N60 EQUIVALENT Search Results

40N60 EQUIVALENT Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TK040N60Z1		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 600 V, 52 A, 0.04 Ω@10 V, TO-247	Datasheet
TMP89FM42UG		Toshiba Electronic Devices & Storage Corporation	8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80B	Datasheet
TMP89FM42LUG		Toshiba Electronic Devices & Storage Corporation	8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80B	Datasheet
TMP89FS28LFG		Toshiba Electronic Devices & Storage Corporation	8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP176-P-2020-0.40D	Datasheet
TMP89FS62BUG		Toshiba Electronic Devices & Storage Corporation	8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP44-1010-0.80-003	Datasheet

40N60 EQUIVALENT Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
40n60 transistor Abstract: 30N60 40n60 30N60A 40n60 igbt 17N10 wiom DC transistor JE 1090 20N60A igbt equivalent to 40n60 Contextual Info: MbE D • Mb S b S E b OO O O S T M T «IXY I X V S CORP T □IX Y S I V I S Data Book NO.91560A October 1991 "S" Series MOSIGBTs High Short Circuit SOA Insulated Gate Bipolar Transistor Features • • • Guaranteed Short Circuit Capability SCSOA Optimized for 60Hz to 30kHz Switching	OCR Scan	1560a 30khz ixsh20n60 ixsm20n60 +11tj-125 40n60 transistor 30n60 40n60 30n60a 40n60 igbt 17n10 wiom dc transistor je 1090 20n60a igbt equivalent to 40n60	PDF
KYS 30 40 diode Abstract: 40n60 transistor mos 30N60 2355Z wiom DC IXYS 30N60 of ic 3915 1XYS 30N60T 35N100 Contextual Info: MbE 4bôb22b D I X Y S OGQQÔTM T H IX Y CORP □IXYS Data Book NO.91560A October 1991 "S" Series MOSIGBTs High Short Circuit SOA Insulated Gate Bipolar Transistor Features Guaranteed Short Circuit Capability SCSOA Low Input Capacitances Optimized for 60Hz to 30kHz Switching	OCR Scan	30khz 1560a 4bflb55b q000s1s +12ixsh20n60 ixsm20n60 kys 30 40 diode 40n60 transistor mos 30n60 2355z wiom dc ixys 30n60 of ic 3915 1xys 30n60t 35n100	PDF
40n50 Abstract: 40n60 equivalent megamos 48 40n60 40N50A megamos IXGM40N60A ID 48 Megamos f g megamos IXGH40N60 Contextual Info: 46Ö6226 I X Y S CORP 9iP 00093 D T ~ PE I Llbflfc.5 5 h"'DD0 b a [i3""T I X Y S CORP R MegaMOS IGTs IXGH, IXGM N-Channel Very High Power Conductivity Modulated MOSIGTs PRELIMINARY INFORMATION FEATURES • • • • Very high current capability— 75	OCR Scan	50khz 40n50 40n60 equivalent megamos 48 +740n60 40n50a megamos ixgm40n60a id 48 megamos f g megamos ixgh40n60	PDF
40n60 igbt Abstract: 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60 Contextual Info: SCSOA IGBT S-Series / D-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode Short Circuit Current Rated SCSOA IGBT S-Series Contents IGBT VCES max V High Speed Low VCE(sat) 600 IC VCE(sat) max TC = 25 °C TC = 25 °C A V TO-220 (IXSP) TO-263	Original	o-220 o-263 o-247 16n60 +14b1-10 24n60 30n60 40n60 40n60 igbt 35n120u1 b1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35n120u1 igbt equivalent to 40n60 80n60	PDF