40ET Search Results

P3S12D40ETP

Contextual Info: 512Mb DDR Synchronous DRAM P3S12D30/40ETP DESCRIPTION P3S12D30ETP is a 4-bank x 16,777,216-word x 8-bit, 40ETP is a 4-bank x 8,388,608-word x 16-bit, double data rate synchronous DRAM, with SSTL_2 interface. All control and address signals are referenced to the rising edge of CLK. Input data is registered on both edges of data strobe, and output

40ET

Abstract: 110EET 140EET 35ET 45ET 710a 10CT 12CT 16CT 20CT
Contextual Info: BIF Document Semiconductor Fuse 6-80A, 690 Volts 35785312 Size 104 6 4 2 103 6 4 25ET 32ET 35ET 40ET 45ET 56ET 63ET 80ET 2 Virtual Pre-Arcing Time In Seconds 102 6 4 2 101 6 4 6CT 10CT 12CT 16CT 20CT 2 100 6 4 2 10–1 6 4 2 10–2 6 4 2 10–3 6 4 2 10–4

IS46R16160B

Abstract: zentel is43r16160b
Contextual Info: IS43R83200B, IS46R83200B IS43R16160B, IS46R16160B 32Mx8, 16Mx16 256Mb DDR Synchronous DRAM FEATURES: • Vdd =Vddq = 2.5V+0.2V -5, -6, -75 • Double data rate architecture; two data transfers per clock cycle. • Bidirectional , data strobe (DQS) is transmitted/

hall marking code A04

Abstract: INTELDX4 write-through YSS 928
Contextual Info: INTEL486 PROCESSOR FAMILY • lntelDX4TM P ro c e s s o r — Up to 100-MHz Operation -Speed-M ultiplying Technology — 32-Bit Architecture — 16K-Byte On-Chip Cache — Integrated Floating-Point Unit — 3.3V Core Operation with 5V Tolerant I/O Buffers

800W PFC buck

Abstract: 48v to 24v buck 500W buck converter
Contextual Info: A D VA N C I N G T H E P O W E R C U R V E Industrial Products rug g edized dc-dc converters for industr ial applicati ons P RO D UC T F E A T UR ES FAMILY SUMMARY ••High Power Density –– smaller modules require less board area and provide greater design flexibility

Contextual Info: IS43R16160 32Mx8, 16Mx16 256Mb Synchronous DRAM PRELIMINARY INFORMATION OCTOBER 2008 FEATURES: DESCRIPTION: •฀ VDD =VDDQ = 2.5V+0.2V -5, -6, -75 •฀ Double data rate architecture ; two data transfers per clock cycle. •฀ Bidirectional , data strobe (DQS) is transmitted/

IS43R83200B

Abstract: 78S18 A3S56D30 IC43R16160B
Contextual Info: IS43R83200B IS43R16160B, IC43R16160B 32Mx8, 16Mx16 256Mb DDR Synchronous DRAM FEATURES: • Vdd =Vddq = 2.5V+0.2V -5, -6, -75 • Double data rate architecture; two data transfers per clock cycle. • Bidirectional , data strobe (DQS) is transmitted/ received with data

180LETa

Abstract: IEC 269 bussmann semiconductor fuse 630 amp bussmann semiconductor fuse WITH BASE 16LCT C5268-1 315MT Bussmann fuse BS 88 32 ET C5268-5 140EET
Contextual Info: High Speed Fuses British BS 88 fuses High Speed Fuses General Information Introduction British BS 88 Contents Fuse Amp Volts Range 240 6-900 690 6-710 Page 182-184 185-188 Accessories Indicator System & Fuse Bases 189 British BS 88 Fuse Ranges Amps 6-900 6-900

merlin gerin fuse

Abstract: IR 2544S MICRO FUSE-LINKS 1608 TYPE HRC fuse gg GEC MGI1252 THERMAL Fuse m20 tf 115 c smd marking 1pn ns 1000 n merlin gerin microtemp g4a01
Contextual Info: 2189 Technical portal and online community for Design Engineers - www.element-14.com Fuses & Circuit Breakers Page 10x35mm Fuses . . . . . . . . . . . . . . . . . . . . . . . . . . . 10x38mm Fuses . . . . . . . . . . . . . . . . . . . . . . . . . . . 14x51mm Fuses . . . . . . . . . . . . . . . . . . . . . . . . . . .

is43r16160b-6tli

Abstract: is43r16160b
Contextual Info: IS43R83200B IS43R16160B, IC43R16160B 32Mx8, 16Mx16 256Mb Synchronous DRAM FEATURES: • Vdd =Vddq = 2.5V+0.2V -5, -6, -75 • Double data rate architecture ; two data transfers per clock cycle. • Bidirectional , data strobe (DQS) is transmitted/ received with data

40eps12

Abstract: 40ETF12PbF p035h 40EPS
Contextual Info: Bulletin I2179 rev. A 03/06 SAFEIR Series 40EPS.PbF INPUT RECTIFIER DIODE VF Lead-Free "PbF" suffix < 1V @ 20A IFSM = 475A VRRM = 800 - 1200V Description/ Features The 40EPS.PbF rectifier SAFEIR series has been optimized for very low forward voltage drop, with moderate

170M8554

Abstract: bussmann Fuse 450 amps 250 volts max zs FM09 PS Jet 20A 300v fuse
Contextual Info: Circuit Protection Products for the Electrical Industry New Products for All Markets For product data sheets, visit www.cooper.bussmann.com/products/datasheet.asp Circuit Protection Products for the Electrical Industry Table of Contents RED indicates NEW information

ma6351

Abstract: LE-24T ZO 607MA A82496 290446 EM 5135 diode 522110 jp 486TM 241429 dm4021
Contextual Info: INTEL CORP -CUP/PRPHLSJ S7E D • 4 fl2 bl 7 5 01522147 t»23 ■ in te l Pentium Processor User's Manual Volume 2: 82496 Cache Controller and 82491 Cache SRAM Data Book NOTE: The Pentium™ Processor User's Manual consists of three books: Pentium™ Processor Data Book, Order Number 241428; the

ana 658 solar charge

Abstract: RD2004 for 4120 40A 14VDC relay pico fuse color code varistor 20sp Lucent SLC 96 cabinet MDM cooper bussmann semiconductor fuse catalogue MDQ 100a 600v bridge rectifier GBA 616
Contextual Info: Bussmann electrical full line catalog Leadership in Circuit Protection Introducing Bussmann by Eaton The protection you rely on. For more, visit Bussmann.com Leadership in Circuit Protection. The only company that can provide a complete circuit protection solution for all applications.

Contextual Info: Bulletin I2179 rev. A 03/06 SAFEIR Series 40EPS.PbF INPUT RECTIFIER DIODE VF Lead-Free "PbF" suffix < 1V @ 20A IFSM = 475A VRRM = 800 - 1200V Description/ Features The 40EPS.PbF rectifier SAFEIR series has been optimized for very low forward voltage drop, with moderate

Contextual Info: IS43R16800CC 8Mx16 128Mb DDR Synchronous DRAM JUNE 2009 FEATURES: DESCRIPTION: •฀ VDD =VDDQ = 2.5V+0.2V -5, -6, -75 •฀ Double data rate architecture; two data transfers per clock cycle. •฀ Bidirectional , data strobe (DQS) is transmitted/ received with data

MF Electronics crystal oscillator

Abstract: MF Electronics Corp VCO Oscillators Crystals Crystal oscillator 12 MHz M2944 crystal oscillator burn-in data
Contextual Info: design application POWER, PACKAGING & COMPONENTS Inverted-Mesa Crystals Carry Oscillators Into The Internet Age Crystal technology moves from the lab C to the production line, boosting frequencies while reducing jitter. Martin Finkelstein MF ELECTRONICS CORP.

315MMT

Abstract: 280MMT bussmann semiconductor fuse 630mmt 500MMT 630MMT 400MMT 450MMT 200MMT SB00233 710a
Contextual Info: BIF Document Semiconductor Fuse 180-710A, 690 Volts 35785311 Size 104 6 4 2 400MMT 450MMT 500MMT 560MMT 630MMT 710MMT 103 6 4 2 102 Virtual Pre-Arcing Time In Seconds 6 4 180MMT 200MMT 225MMT 280MMT 315MMT 355MMT 2 101 6 4 2 100 6 4 2 10–1 6 4 2 10–2 6

110EET

Abstract: 160EET 315MT 140EET 200MT 710a 160MT 180MT 250MT 280MT
Contextual Info: BIF Document Semiconductor Fuse 90-355A, 690 Volts 35785313 Size 104 6 4 2 103 160MT 180MT 200MT 250MT 280MT 315MT 355MT 6 4 2 102 Virtual Pre-Arcing Time In Seconds 6 4 2 101 6 4 90EET 110EET 140EET 160EET 2 100 6 4 2 –1 10 6 4 2 10–2 6 4 2 10–3 6 4

220v AC voltage stabilizer schematic diagram

Abstract: FUSE M2 250e 11kV breaker control circuit diagram bussmann Fuse 170L series bussmann semiconductor fuse catalogue arc welder schematic HRC fuse gg GEC relay applications for 6.6kV switchgear ups circuits 170E bussmann
Contextual Info: Circuit Protection Products for the Electrical Industry New Products for All Markets For product data sheets, visit www.cooper.bussmann.com/products/datasheet.asp Circuit Protection Products for the Electrical Industry Table of Contents RED indicates NEW information

10CT

Abstract: 12CT 16CT 20CT 25ET 32ET 35ET 40ET 45ET 56ET
Contextual Info: Bussmann British Style BS 88 6-700A 690V Type CT ET FE EET FEE FM FMM MT† MMT† Rated Current RMS-Amps ® Electrical Characteristics I2t A2S Clearing Clearing Pre-arc at 415V at 660V 6 10 12 16 20 25 32 35 40 45 56 63 80 35 40 45 50 63 71 80 90 100

BUSSMANN

Abstract: BS88 fuse curve 355LMT 180FM BS88 fuse curve 630 TI-600 1BS101 10LET BS88 fuse curve 100a 160fee
Contextual Info: ‘08 High Speed Fuses British Style - BS 88 High Speed Fuse - BS 88 British Style - 240V All Bussmann British style fuses are tested to IEC 60269 Part 4. This standard requires a test voltage which is 5% higher than the rated voltage. In the North America fuses are required to clear

40EPS12 diode datasheet

Abstract: 40EPS 40EPS12 P035H
Contextual Info: Bulletin I2179 rev. A 03/06 SAFEIR Series 40EPS.PbF INPUT RECTIFIER DIODE VF Lead-Free "PbF" suffix < 1V @ 20A IFSM = 475A VRRM = 800 - 1200V Description/ Features The 40EPS.PbF rectifier SAFEIR series has been optimized for very low forward voltage drop, with moderate

IS43R16800CC

Abstract: 43R16800CC A3S56D zentel ddr sdram 128Mbit 8Mx16 40ETP
Contextual Info: IS43R16800CC 8Mx16 128Mb DDR Synchronous DRAM FEATURES: • Vdd =Vddq = 2.5V+0.2V -5, -6, -75 • Double data rate architecture; two data transfers per clock cycle. • Bidirectional , data strobe (DQS) is transmitted/ received with data • Differential clock input (CLK and /CLK)