IS43R16160 Search Results

IS46R16160B

Abstract: zentel is43r16160b
Contextual Info: IS43R83200B, IS46R83200B IS43R16160B, IS46R16160B 32Mx8, 16Mx16 256Mb DDR Synchronous DRAM FEATURES: • Vdd =Vddq = 2.5V+0.2V -5, -6, -75 • Double data rate architecture; two data transfers per clock cycle. • Bidirectional , data strobe (DQS) is transmitted/

Contextual Info: IS43R83200A -6,-75 IS43R16160A -6,-75 ISSI 4-bank x 8,388,608 - word x 8-bit (4-bank x 4,194,304 - word x 16-bit) 256 Mb DDR Synchronous DRAM May 2005 DESCRIPTION IS43R83200A is a 4-bank x 8,388,608-word x 8bit, IS43R16160A is a 4-bank x 4,194,304-word x 16bit double

16M x 16 DDR TSOP-66

Abstract: DDR333 DDR400 IS43R16160A
Contextual Info: ISSI IS43R16160A 16Meg x 16 256-MBIT DDR SDRAM PRELIMINARY INFORMATION NOVEMBER 2005 FEATURES DEVICE OVERVIEW • • ISSI’s 256-Mbit DDR SDRAM achieves high-speed data transfer using pipeline architecture and two data word accesses per clock cycle. The 268,435,456-bit memory

ISSI 742

Contextual Info: ISSI IS43R16160A 16Meg x 16 256-MBIT DDR SDRAM PRELIMINARY INFORMATION AUGUST 2005 FEATURES DEVICE OVERVIEW • • ISSI’s 256-Mbit DDR SDRAM achieves high-speed data transfer using pipeline architecture and two data word accesses per clock cycle. The 268,435,456-bit memory

Contextual Info: IS43R16160 32Mx8, 16Mx16 256Mb Synchronous DRAM PRELIMINARY INFORMATION OCTOBER 2008 FEATURES: DESCRIPTION: •฀ VDD =VDDQ = 2.5V+0.2V -5, -6, -75 •฀ Double data rate architecture ; two data transfers per clock cycle. •฀ Bidirectional , data strobe (DQS) is transmitted/

IS43R83200B

Abstract: 78S18 A3S56D30 IC43R16160B
Contextual Info: IS43R83200B IS43R16160B, IC43R16160B 32Mx8, 16Mx16 256Mb DDR Synchronous DRAM FEATURES: • Vdd =Vddq = 2.5V+0.2V -5, -6, -75 • Double data rate architecture; two data transfers per clock cycle. • Bidirectional , data strobe (DQS) is transmitted/ received with data

is43r16160b-6tli

Abstract: is43r16160b
Contextual Info: IS43R83200B IS43R16160B, IC43R16160B 32Mx8, 16Mx16 256Mb Synchronous DRAM FEATURES: • Vdd =Vddq = 2.5V+0.2V -5, -6, -75 • Double data rate architecture ; two data transfers per clock cycle. • Bidirectional , data strobe (DQS) is transmitted/ received with data

zentel

Abstract: a3s56d30 IS43R16160B-6TL
Contextual Info: IS43R83200B IS43R16160B PRELIMINARY INFORMATION JUNE 2007 FEATURES: DESCRIPTION: -Vdd=Vddq=2.5V+0.2V -6, -75 -Vdd=Vddq=2.6V+0.1V (-5) -Double data rate architecture ; two data transfers per clock cycle. -Bidirectional , data strobe(DQS) is transmitted/received

IS43R83200B

Abstract: IS43R16160B zentel IS46R16160B IS43R16160B-5TL
Contextual Info: IS43R83200B, IS46R83200B IS43R16160B, IS46R16160B 32Mx8, 16Mx16 256Mb DDR Synchronous DRAM FEATURES: • Vdd =Vddq = 2.5V+0.2V -5, -6, -75 • Double data rate architecture; two data transfers per clock cycle. • Bidirectional , data strobe (DQS) is transmitted/

Contextual Info: IS43R83200B, IS46R83200B IS43R16160B, IS46R16160B 32Mx8, 16Mx16 256Mb DDR Synchronous DRAM AUGUST 2010 FEATURES: DESCRIPTION: •฀ VDD =VDDQ = 2.5V+0.2V -5, -6, -75 •฀ Double data rate architecture; two data transfers per clock cycle. •฀ Bidirectional , data strobe (DQS) is transmitted/

IS43R16160

Abstract: 43R16160 A3S56D A3S56 zentel a3s56d30 PRE-A10
Contextual Info: IS43R16160 32Mx8, 16Mx16 256Mb Synchronous DRAM FEATURES: • Vdd =Vddq = 2.5V+0.2V -5, -6, -75 • Double data rate architecture ; two data transfers per clock cycle. • Bidirectional , data strobe (DQS) is transmitted/ received with data • Differential clock input (CLK and /CLK)

tsop-ii 66 PIN

Abstract: zentel a3s56d30
Contextual Info: IS43R83200B IS43R16160B PRELIMINARY INFORMATION APRIL 2007 FEATURES: DESCRIPTION: -Vdd=Vddq=2.5V+0.2V -6, -75 -Vdd=Vddq=2.6V+0.1V (-5) -Double data rate architecture ; two data transfers per clock cycle. -Bidirectional , data strobe(DQS) is transmitted/received

TSOP 66 pin

Contextual Info: IS43R83200B IS43R16160B, IC43R16160B 32Mx8, 16Mx16 256Mb DDR Synchronous DRAM FEATURES: • Vdd =Vddq = 2.5V+0.2V -5, -6, -75 • Double data rate architecture; two data transfers per clock cycle. • Bidirectional , data strobe (DQS) is transmitted/ received with data

Contextual Info: ISSI IS43R16160A1 16Meg x 16 256-MBIT DDR SDRAM PRELIMINARY INFORMATION MAY 2006 FEATURES DEVICE OVERVIEW • • ISSI’s 256-Mbit DDR SDRAM achieves high-speed data transfer using pipeline architecture and two data word accesses per clock cycle. The 268,435,456-bit memory

Samsung EOL

Abstract: IS42S81600F is42s16320 IS43DR16320 IS42S32200L IS49NLC36800 IS43R32400E IS46R Mobile SDRAM IS42S32200E
Contextual Info: Industrial Grade Memory Products Selecting the Right ISSI Industrial Grade Memory Fastest Random Access Access <20ns 288-576Mb Memory No DRC* Lower cost/bit 18-72Mb RLDRAM 10-20ns Easy Interface, Low Power Higher Density Ultra Low Power Synch SRAM <5ns Asynch SRAM

is25c64B

Abstract: IC61C1024 IS25C128A IS42VM16800E IS42SM16800 IS24C16A Smart is62c1024al tsop2-54 4kx8 sram IS42S32800D
Contextual Info: To our valued customers, Often times electronic systems are placed in harsh environments that test the limits of device quality and reliability. These harsh environments exist in many Industrial, Automotive, Networking, and Mobile Communication applications. Many of these applications are

IC1210-m128LQ

Abstract: IC1114 IC1210-f128lq IC1230-M128LQ IC1110-F128LQ IC1210 M128LQ IC1110-M128LQ IC1210 xd card reader IC1230-F128LQ
Contextual Info: ISSI Advanced Memory Solutions PRODUCT SELECTOR GUIDE JUNE 2006 DRAM SRAM EEPROM LOGIC ICSI PRODUCTS Dear Valued Customer, While many memory suppliers are discontinuing SRAM and low to medium density DRAM products, we at ISSI are not. While many memory suppliers are

is62c51216al

Abstract: IS43LR16320B IS66WVE4M16BLL is66wve2m16 IS43DR16640A BGA60 IS66WVE4M16ALL TSOP2-44 IS42SM16400G is45vs16160d
Contextual Info: To our valued customers, At ISSI we design, develop and market high performance integrated circuits for the following key markets: i automotive electronics (ii) networking/telecommunications infrastructure, (iii) industrial/military/medical electronics (iv) mobile communications and digital

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178

00E-12

Contextual Info: IS43R83200D IS43/46R16160D, IS43/46R32800D ADVANCED INFORMATION 8Mx32, 16Mx16, 32Mx8 DECEMBER 2011 256Mb DDR SDRAM FEATURES DEVICE OVERVIEW • • • • ISSI’s 256-Mbit DDR SDRAM achieves high speed data transfer using pipeline architecture and two data word

Automotive Product Selector Guide

Abstract: products automotive IS61WV51216 IS61WV512 DDR RAM 512M is66wve2m16 IS61LPS2048 IS61WV25632 BGA165 VFBGA package tray
Contextual Info: Automotive Market Support Introduction ISSI has been supporting the Automotive Market since 1999. In 2001, ISSI began to broaden its support of the market by introducing the Automotive Business Unit. The purpose of this business unit is to provide cross-functional unit support within ISSI to continually enhance the Automotive Infrastructure from

16M X 32 SDR SDRAM

Abstract: IS42VM16400K is66wve2m16 IS42SM16100G is66wvc4m16 ISSI IS42S16400j IS66WVC4M16ALL CRAM 256mb IS42RM16800G
Contextual Info: Known Good Die KGD /Wafer Level Memories Introduction Die-level customers require a memory partner who can meet their many unique needs for high quality, long term support, guaranteed availability, and low total cost of ownership. ISSI is a provider of high quality specialty memory solutions for

IS43R32800D

Contextual Info: IS43R83200D IS43/46R16160D, IS43/46R32800D 8Mx32, 16Mx16, 32Mx8 256Mb DDR SDRAM JUNE 2012 FEATURES DEVICE OVERVIEW • VDD and VDDQ: 2.5V ± 0.2V • SSTL_2 compatible I/O • Double-data rate architecture; two data transfers per clock cycle • Bidirectional, data strobe DQS is transmitted/