40GHZ Search Results

Contextual Info: Advance Product Information November 5, 2001 36 to 40 GHz 1W Power Amplifier TGA1171-EPU Key Features and Performance • • • • • • • 0.25um pHEMT Technology 36-40 GHz Frequency Range 29 dBm Nominal Pout @ P1dB, 38GHz 14 dB Nominal Gain OTOI 36dBm at 40GHz typical

Ablebond

Abstract: ultrasonic bond LMA406
Contextual Info: LMA406 LOW NOISE PHEMT MMIC • FEATURES ♦ ♦ ♦ ♦ ♦ • 18 GHz to 40 GHz Frequency Band 4.5 dB Noise Figure 12dB Gain 14 dBm Output Power at Saturation +3 V Single Bias Supply DESCRIPTION AND APPLICATIONS The Filtronic Solid State LMA406 is a low noise PHEMT amplifier that operates from 18 to 40GHz.

"Schottky Barrier Diodes"

Abstract: dh38 dh379 DH378 DH385
Contextual Info: DH378.DH385 G a A s S C H O T T K Y R E C E I V I N G D I O D E S FEATURES Chip diodes : 2 to 60GHz Case style flexibility M208, BH10, F51. Operating frequency range : packaged diodes : 2 to 40GHz A P P L IC A T IO N S The GaAs SCHOTTKY barrier diodes are used

Contextual Info: D C Blocks 0.01-40GHz DC BLOCKS AUDIO INTERFERENCE SUPPRESSORS • Broadband Frequency Ranges of 0.01 to 40 GHz • Suppresses DC thru 100 kHz Leakage from External Signal Sources • Low Insertion Loss of 0.5 dB Maximum from 0.01 to 18 GHz • Small Size, Light Weight

Contextual Info: 0.01-40GHZ DC BLOCKS AUDIO INTERFERENCE SUPPRESSORS • Broadband Frequency Ranges of 0.01 to 40 GHz • Suppresses DC thru 100 kHz Leakage from External Signal Sources • Low Insertion Loss of 0.5 dB Maximum from 0.01 to 18 GHz • Small Size, Light Weight

GZ06023C104M800ZNT

Abstract: GZ0402ZD104M800ZNT GZ0415ZD104M600ZNT SN63 GZ Series AVX GZ
Contextual Info: GZ Series Maxi Broadband DC Block to 40GHz GENERAL INFORMATION The GZ Series was developed specifically to address DC Blocking issues from ~15KHz through 40GHz and incorporate small footprints to conserve board space. The three parts in this series are designed to match .015" 0.381mm and .020"

Contextual Info: TECHNICAL DATA SHEET Description : Options : R574802400 50 Ohms Terminated SP4T 40GHz SMA 2.9 N/O 12V SWITCH - RF CHARACTERISTICS Number of ways Frequency range Impedance Frequency GHz VSWR max Insertion loss max Isolation min Average power (*) :4 : 0 - 40 GHz

Contextual Info: TECHNICAL DATA SHEET Description : Options : R574822410 50 Ohms Terminated SP4T 40GHz SMA 2.9 LATCHING 12V SWITCH POSITIVE COMMON RF CHARACTERISTICS Number of ways Frequency range Impedance Frequency GHz VSWR max Insertion loss max Isolation min Average power (*)

Contextual Info: TECHNICAL DATA SHEET Description : Options : R574823400 50 Ohms Terminated SP4T 40GHz SMA 2.9 LATCHING 28V SWITCH - RF CHARACTERISTICS Number of ways Frequency range Impedance Frequency GHz VSWR max Insertion loss max Isolation min Average power (*) :4 : 0 - 40 GHz

Contextual Info: TECHNICAL DATA SHEET Description : Options : R574853505 50 Ohms Terminated SP5T 40GHz SMA 2.9 LATCHING 28V D-SUB SWITCH INDICATOR / SELF CUT-OFF / SUPP. DIODES RF CHARACTERISTICS Number of ways Frequency range Impedance Frequency GHz VSWR max Insertion loss max

"High Gain Buffer Amplifier"

Contextual Info: CHA2098a 20-40GHz High Gain Buffer Amplifier GaAs Monolithic Microwave IC Vd1 Description The CHA2098a is a high gain broadband threestage monolithic buffer amplifier. It is designed for a wide range of applications, from military to commercial communication

CHA3093a

Abstract: CHA3093a99F/00
Contextual Info: CHA3093a 20-40GHz Medium Power Amplifier GaAs Monolithic Microwave IC Description The circuit is manufactured with a PM-HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form.

CHX2091

Abstract: microwave IC
Contextual Info: CHX2091 20-40GHz Frequency Multiplier GaAs Monolithic Microwave IC Description The CHX2091 is a cascadable by 2 frequency multiplier monolithic circuit. It is designed for a wide range of applications, from military to commercial communication systems. The

FUJITSU MMIC LNA

Abstract: FUJITSU LNA
Contextual Info: FMM5704X 36-40GHz LNA MMIC FEATURES • Low Noise Figure: NF = 2.0dB Typ. @ f=40 GHz • High Associated Gain: Gas = 18dB (Typ.) @ f=40 GHz • Wide Frequency Band: 36-40 GHz • High Output Power: 9dBm (Typ.) @ f=40 GHz • Impedance Matched Zin/Zout = 50Ω

Contextual Info: CHT3091a DC-40GHz ATTENUATOR GaAs Monolithic Microwave IC Description The CHT3091a is a variable DC-40GHz attenuator designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps

ec2612 phemt

Abstract: EC2612
Contextual Info: EC2612 40GHz Super Low Noise PHEMT Pseudomorphic High Electron Mobility Transistor ¦ Chip size : 0.63 x 0.37 x 0.1 mm Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm PHEMT technology. Gate width is 120µm and the 0.15µm

Contextual Info: CHA3093c 20-40GHz Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA3093c is a high gain broadband fourstage monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication

100PF

Contextual Info: CHX2092a RoHS COMPLIANT 10-40GHz Frequency Multiplier GaAs Monolithic Microwave IC Description The CHX2092a is a cascadable by 4 frequency multiplier monolithic circuit. It is designed for a wide range of applications, from military to commercial communication

ec2612 phemt

Abstract: pHEMT transistor 30GHz EC2612 MAR 618 transistor LS 9814
Contextual Info: EC2612 RoHS COMPLIANT 40GHz Super Low Noise pHEMT Pseudomorphic High Electron Mobility Transistor Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm pHEMT technology. Gate width is 120µm and the 0.15µm

SAS 251

Abstract: A 473 G
Contextual Info: CHA2098b RoHS COMPLIANT 20-40GHz High Gain Buffer Amplifier GaAs Monolithic Microwave IC Description Vd1 The CHA2098b is a high gain broadband threestage monolithic buffer amplifier. It is designed for a wide range of applications, from military to commercial

CHT4694-QAG

Abstract: T4694 AN0017 MO-220 CHT4694
Contextual Info: CHT4694-QAG RoHS COMPLIANT 25- 40GHz ATTENUATOR GaAs Monolithic Microwave IC in SMD leadless package Description The CHT4694-QAG is a variable 25-40GHz attenuator designed for a wide range of applications, from military to commercial communication systems.

AN0017

Abstract: CHE1270 CHE1270-QAG MO-220 DSCHE1270-QAG9222
Contextual Info: CHE1270-QAG RoHS COMPLIANT 12-40GHz Wide Band Detector GaAs Monolithic Microwave IC in SMD leadless package Description UMS E1270 YYWW The CHE1270-QAG is a detector that integrates a matched detector diode Vdet and a reference diode (Vref). It is designed for a wide range of applications

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Contextual Info: CHA2094b RoHS COMPLIANT 36-40GHz Low Noise High Gain Amplifier GaAs Monolithic Microwave IC Description Vds Vds The CHA2094 is a three-stage monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems.

Contextual Info: K*C1« 7VW1-71 UM* NOTES 1. MATING : Interface dimensions per Solitron/Microwave MD-154, SSMA 40GHz . 2. MATERIALS : Body and Coupling Nut: Contact Insulator Lock Ring:Gasket:- FINISH: Coupling Nut:Contact:- Body 4. 5. S YM Cable Assembly Instructions