3G30B Search Results

VTE-C15AL

Contextual Info: SbE D 3G30bDT D001214 GaAIAs Infrared Emitting Diodes 42=1 B i V C T V T E -C 1 5 A L 15 mil Chip — 880 nm E G & G VACTEC D E SC R IP T IO N P A C K A G E D IM E N S IO N S inch mm EG&G Vactec fabricates its LED chips using a state-of-the-art liquid phase

VTT0942

Abstract: VTT0943 VTT0944
Contextual Info: 5 bE 3G30b0T D GGD1177 .040" NPN Phototransistors Low Cost Hermetic TO-18 Flat Window Pkg 7B1 • VCT V TT 0 9 4 2 , 43, 44 T—41—61 E G & G VACTEC PACKAGE DIMENSIONS inch mm .5 0 ( 1 2 . 7 ) ■206 ( 5 .2 3 ) ’ .1 7 8 ( 4 . 5 2 ) 2 0 5 ( S .2 1 ) CASE 53

C30644E

Abstract: InGaAs apd photodiode C30644 C30645E photodiode Avalanche photodiode (APD) FOR POWER RCA 432 RCA H 432 C30644ECER C30645 C30645ECER
Contextual Info: E I G t & G/CANADA/OPTOELEK C i l 3G30bl0 IO OOOOO'ì? 432 H C ANA Planar InGaAs ÁPD C30644, C30645 DATA SH EET E le c t r o Optics • Spectral response range 1100 to 1700 nm ■ High responsivity ■ Low capacitance ■ Fast response time ■ Low dark current and noise

31AA

Abstract: CLD31 VTD31 VTD31AA Photodiode vactec
Contextual Info: Sb E D 3G30bD^ OODlin 02 T • ■p-41-S I VCT VTD31, VTD31AA VTP Process Photodiodes C L D 3 1 , 3 1 A A IN D U S T R Y E Q U IV A LE N T E G 8c 0 VACTEC PACKAGE DIMENSIONS inch (mm) CASE 13 PRODUCT DESCRIPTION CERAMIC CHIP ACTIVE AREA: .026 in2 (16.73 mm2)

VTT0942

Abstract: VTT0943 VTT0944
Contextual Info: 5bE 3G30b0T D □□□1177 .040" NPN Phototransistors Low Cost Hermetic TO-18 Flat Window Pkg E 751 • VCT V T T 0 9 4 2 , 43, 44 T —41—61 G & G VACTEC PACKAGE DIMENSIONS inch mm ■2 0 6 ( 5 .2 5 ) .5 0 ( 12 .7 ) (0 51) CASE 53 PRODUCT DESCRIPTION

VTP100A

Contextual Info: 5bE D 3G30bCH OODlObB 2 5 b VCT VTP100A VTP Process Photodiodes E G & G VACTEC T-41-51 PACKAGE DIMENSIONS inch mm .7 5 ( 19 . 1 ) CATHODE MARK 4 5 ° X .0 3 5 ( 0 . 8 9 ) - r • MINIMUM NOM. - .2 3 0 ( 5 .« 4 ) SENSITIVE .2 1 0 ( 5 .3 3 ) SURFACE CATHODE

photodiode vtb 5041

Abstract: k420 VTB5040B VTB5041B
Contextual Info: SbE D • 3G30bGT DT D VTB Process Photodiodes [ fi & £ BIVCT V T B 5 04 0 B , 5041 B VACTEC PACKAGE D IM EN SIO N S inch mm] PRODUCT DESCRIPTION CASE 14 Planar silicon photodiode in a “flat" window, dual lead TO-5 package. The package incorporates an infrared rejec­

RCA 32

Abstract: C86069E-14 C86072E-13 C86072E-14
Contextual Info: 1 E G & G/CANADA/OPTOELEK V B M B IDE D ÆM Electro • 3G30blü 0 D 0 0 0 3 cì 3 ■ C ANA IlU f IOptics NEWSLETTER PRELIMINARY DATA SHEET SERIES C86069 AND C86072 1550 nm Edge Emitting LED's The RCA series of 1550 nm LED's are edge emitting InGaAsP diodes produced by

RCA c30808

Abstract: TAG60 3G30 L568 C30822 photodiode C30807 C30809 C30810 d28j 35XL
Contextual Info: E G & G/CANADA/OPTOELEK 3G30blQ ID □□□□!□! 7T3 ICANA Photodiode I t C J C30807, C30808, C30809 C30810, C30822, C30831 Optics E le c ,r o l DATA SHEET ' V f'S T 3 N-Type Silicon p-i-n Photodetectors Broad Range of Photo­ sensitive Surface Areas 0.2 mm2 to 100 mm2

SIECOR Fiber Optic cable

Abstract: SIECOR Fiber Optics Siecor 10-dimensional C86045EV1 C86045EV2 C86045EV3 C86045G C86052E C86053E
Contextual Info: c E Q 8, 6/CANADA/0PT0ELEK 10E J> • 3G30blQ 000005Ô 7 M C A N A ■ B 0 * MM Electro ■ WMWm I Optics 1300 nm Pulsed Laser Series DATA SHEET C86045EV1 C86045EV2 C86045EV3 C86045G C 86053E C86053G - Removable cap - Hermetic package with glass window - Multimode fiber

Contextual Info: E G & 6/CAN ADA /OPTOELEK • m A ■ l l f IG D ■ rm i Electro I Optics 3G30bl0 a0G01b3 T3Q « C A N A InGaAs Photodiodes C30986 Series DATA SH EET Fo r Detection of 10 0 0 to 1 7 0 0 nm Radiation Transim pedance Pre am p lifie r M odules W ith or W ithout Integral Fib e r Optic Pigtails

Contextual Info: 5L.E D 3G30bCn GD01204 GaAs Infrared Emitting Diodes VTE1013, 16, 18 TO-46 Flat Window Package - 940 nm E & G G VACTEC T 4H 1 PACKAGE DIMENSIONS inch mm f * SÛT « V C T 1.00 ( 25 .4 ) .154 ( 3 .9 1 ) .140 ( 3 .5 6 ) (0.64) ( 0 .3 8 ) •043 ( 1.0 .0 3 7 ( 0 .9 4 )

VTB1112BI

Contextual Info: S la E D 3G30bCH G001G34 VTB Process Photodiodes E G 8. G MSS H V C T VT B 11 12B I, 13BI 7 VACTEC PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 19 TO-46 LENSED HERMETIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) Small area planar silicon photodiode in

Contextual Info: ; 8. 6 / C A N A D A / O P T O E L E K n • m lOE D 3D3üblG OOQOOn ô ■ CANA 7^/-¿>7 ÆM Electro W # InGaAsP Infrared Emitters ■ Optics 1300 nm L E D S E R IES DATA S H EET C86057E SERIES - Dual-in-Line package Single or multimode fiber C86013E - Coaxial package multimode fiber

CS6051

Abstract: SIECOR Fiber Optic cable RCA Solid State siecor C86051EW1 C86051EW2 C86051EW3 C86051EW4 RCA Solid State power devices SIECOR Fiber Optics
Contextual Info: E fi & G / C A N A D A / O P T O E L E K IO ]> 3030blG DD0GGL.5 <122 « C A N A C86051E Series GaAIAs Injection Lasers Developmental Types 800-900 nm Gallium Aluminum Arsenide Injection Lasers for Pulsed Operation With Integral Fiber Optic Output Cables and Connectors

J16-18A-R01M-HS

Abstract: J16-8SP-R05M-HS J16-18A-R01M germanium photodiode
Contextual Info: J ^ E G zG JU D SO N Germanium Detector Operating Notes 0.8 to 1.8 jim 'f§jjpilljf!' Biii 'viflnJP General Responsivity Operating Circuit J16 Series detectors are high-quality G erm anium photodiodes designed for the 800 to 1800 nm w avelength range. The equivalent circuit for a G erm a­

SG2007A

Abstract: SG2004A 3G30b 904nm SG2006A M9002 SG2002A SG2007 SG2010A SG2012A
Contextual Info: E G & G/CANADA/OPTOELEK IO D • Æ M Electro ■ m m V ^ IO D t ic s 3 G 3 0 b l 0 0 0 0 0 0 7 0 2 TT ■iCAJ^IA-p.‘/ SG2000A Series GaAs Pulsed Lasers DATA SHEET 904 nm Gallium Arsenide Injection Lasers for Pulsed Operation Small Emitting Areas Variants With Reverse-Case Polarity are Available

TCN-1000-12

Abstract: NEP 250 TCN-1000-93 TCN-1000-3
Contextual Info: E G & G/CANADA/OPTOELEK H7E D • 3030blD 00D031Ô 7 «CANA TCN-1000 Series -93; -12; - 3 _ t - h i- 6 7 Features • • Built-in Low Noise Amplifier Shielded Feedback Loop • Large Active Area • Shielded Amplifier • • Low Offset Wide Spectral Range

VTT9012

Abstract: VTT9112 VTT1010 VTT9313 Vcn-50V VTT1013 VTT1031 bd 7122 VTA3121 31T52
Contextual Info: V TT A -3B VTT PHOTODARLINGTONS VTA c h ip s VTA-C/VTT-C MATCHED LED-TRANSISTORS VTM PHOTOTRANSISTORS J^ E G zG V A C TE C OPTOELECTRONICS 10900 PAGE BLVD. ST. LOUIS, MO. 63132 USA • • • TWX 910-764-0811 PRODUCT DESCRIPTION FEATURES • • PHONE 314-423-4900

j15te

Abstract: photoconductive MCT 15TE2
Contextual Info: Figure 24-1 Typical Detectivity vs Wavelength for J15TE Series Short-Wave HgCdTe Detectors General J15TE Series "Short-Wave" detectors are photoconductive HgCdTe elem ents on therm oelectric coolers. They are designed for in d u strial and m ilitary applications

gaseous lasers

Abstract: C86083E C86093E 910nm laser rca rca 019 1200cu general electric laser 910nm
Contextual Info: E G 8. G/CANADA/OPTOELEK Electro Optics 5TE ì> m 3030blD 0D0D2b0 2 • CANA T 1 ¥ /~ O S ^ C86093E 910 nm Quantum Well Pulsed Laser DATA SHEET Coaxial Stud Package m 1r 1 The C86093E is a high power single element pulsed laser diode operating in the 900to 920 nm wavelength band. Using

FND-100

Abstract: FND-100Q FND100 FND100Q FND10 ultrafast photodiode ITT 254 Scans-002678
Contextual Info: E G & G 27E JUDSON 303üb0S D 0000107 I 7 7"-*/-57 F F S e rie s FND-100;FND-100Q;FOP-1QO // Features • • • • • • Large Active Area Wide Spectral Range Low NEP High Responsivity Ultra-Fast Rise and Fall Time Isolated Photodiode Chip Operating Data and Specifications at 23°C: Typical Performance at 90 V Bias

Contextual Info: VTP 9412 VTP Process Photodiodes PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 2D Small area planar silicon photodiode in a recessed ceramic package. Chip is coated with a protective layer of clear epoxy. These diodes exhibit low dark current under reverse bias and

slmn

Abstract: InGaAs PIN photodiode 2600 nm
Contextual Info: J k EGgG JUDSON Extended InGaAs Photodiode Operating Notes 1.0 to 2.6 |im General Package Options J18 Series detectors are high quality extended wavelength Indium Gallium Arsenide photo­ diodes for use in the wavelength range from 800 to 2600 nanometers.