C30645E Search Results

C30662E

Abstract: PerkinElmer Avalanche Photodiode avalanche photodiode 1550nm sensitivity 1540nm C30645E avalanche photodiode bias avalanche photodiodes InGaAs apd photodiode photodiode Avalanche photodiode optel
Contextual Info: D A T A S H E E T Optoelectronics C30645E/C30662E Series InGaAs Avalanche Photodiode Description Applications The C30645E/C30662E are high speed, large area lnGaAs/lnP avalanche photodiodes. These devices provide high Q.E., high responsivity and low noise in the spectral range between 1100nm

C1383 NPN transistor collector base and emitter

Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
Contextual Info: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,

FND-100Q

Abstract: FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E
Contextual Info: High-performance emitters & detectors for the most demanding applications PerkinElmer Optoelectronics PerkinElmer Optoelectronics provides Sensor, Lighting and Digital Imaging technologies to speed the development of breakthrough applications for customers in industrial, safety & security, consumer and biomedical markets.

diode d1n914

Abstract: d1n914 DIODE d1n914 C30817E C30659-1550-R2A InGaas PIN photodiode, 1550 NEP C30950 Silicon and InGaAs APD Preamplifier Modules C30954E avalanche photodiode 1550nm sensitivity
Contextual Info: 117142_C30659.qxd 6/21/04 2:33 PM Page 1 Preliminary Data Sheet C30659-900-1060-1550nm Series Silicon and InGaAs APD Preamplifier Modules Applications Range Finding LIDAR Featur es System bandwidth 50 MHz and 200 MHz Ultra low noise equivalent power NEP

C30902S

Abstract: C30817E C30817 C30955EH
Contextual Info: Photodiodes for High-Performance Applications Avalanche Avalanche Photodiodes Silicon and InGaAs APDs Photodiodes FOR Industrial & ANALYTICAL Applications Avalanche Photodiodes – Silicon and InGaAs APDs Applications • Laser range finder • Scanning video imager

Contextual Info: Large Area InGaAs Avalanche Photodiodes for 1550 nm eye-safe laser range finding applications Overview The C30645 and C30662 Series APDs are high speed, large area lnGaAs/lnP avalanche photodiodes. These devices provide large quantum efficiency. Q.E. , high responsivity and low noise in the

C30817E

Abstract: C30955EH
Contextual Info: PhotodiodeS฀For฀hiGh-PerFormAnce฀APPlicAtionS฀ Avalanche Photodiodes Silicon and InGaAs APDs Avalanche Photodiodes – Silicon and InGaAs APDs Applications • Laser range inder • Free space communication Product฀description hese rear entry “reach-through” silicon APDs ofer the best compromise in terms of cost and

Contextual Info: DATASHEET Photon Detection C30645 and C30662 Series Large Area InGaAs Avalanche Photodiodes Key Features •      Spectral response 1100 - 1700 nm High responsivity Low dark current and noise Large area RoHS-compliant Available with lead-solder

Contextual Info: DATASHEET Photon Detection LLAM Series 900/1060/1550/1550E Si and InGaAs Low-Light Analog APD Receiver Modules LLAM Key Features E LLAM-1550E InGasAs APD Preamplifier Modules exhibit enhanced damage threshold and greater resilience when exposed to higher optical power densities.

Contextual Info: E G & G/CANADA/ OP TOELEK 3G 3G blO IO RC/IB ectro Optics OOOOO'ì? 4 3 2 HCANA Planar InGaAs ÁPD C30644, C30645 DATA SHEET • Spectral response range 1100 to 1700 nm ■ High responsivity ■ Low capacitance ■ Fast response time ■ Low dark current and noise

C30644E

Abstract: InGaAs apd photodiode C30644 C30645E photodiode Avalanche photodiode (APD) FOR POWER RCA 432 RCA H 432 C30644ECER C30645 C30645ECER
Contextual Info: E I G t & G/CANADA/OPTOELEK C i l 3G30bl0 IO OOOOO'ì? 432 H C ANA Planar InGaAs ÁPD C30644, C30645 DATA SH EET E le c t r o Optics • Spectral response range 1100 to 1700 nm ■ High responsivity ■ Low capacitance ■ Fast response time ■ Low dark current and noise

C30817E

Contextual Info: 117142_C30659.qxd 6/21/04 2:33 PM Page 1 Preliminary Data Sheet C30659-900-1060-1550nm Series Silicon and InGaAs APD Preamplifier Modules Applications Range Finding LIDAR Featur es System bandwidth 50 MHz and 200 MHz Ultra low noise equivalent power NEP

C30644E

Abstract: InGaAs apd photodiode C30645 rca 536 C30644 C30644ECER C30645E C30645ECER C30645EQC fiber optic monomode
Contextual Info: IDE » 1 740Mb7S 00000^7 3 ^ C A INC/ ELECTRO OPTICS u w Planar InGaAs APD C30644, C30645 DATA i w Spectral response range 1100 to 1700 nm • High responsivity ■ Low capacitance ■ Fast response time ■ Low dark current and noise ■ Available in a variety of convenient packages

Contextual Info: The C30645 and C30662 Series APDs are high speed, large area lnGaAs/lnP avalanche photodiodes. These devices provide high Q.E., high responsivity and low noise in the spectral range between 1100 nm and 1700 nm. They are optimized for use at a wavelength of

C30817E

Abstract: datasheet apd 1550
Contextual Info: PerkinElmer’s C30659 Series includes a Silicon or InGaAs Avalanche Photodiode with a hybrid preamplifier. It is supplied in a single modified 12-lead TO-8 package. The avalanche photodiodes used in these devices are the C30817EH, C30902EH, C30954EH, C30956EH,