FND10 Search Results

Contextual Info: E G & G/CANADA/OPTOELEK 47E 3030blG D GGQ0332 I CANA 1 F Series FND-100;FNP-100Q;FOD-100 T4/-53 Features • • • High Responsivity Ultra-Fast Rise and Fall Time Isolated Photodiode Chip Large Active Area Wide Spectral Range Low NEP Operating Data and Specifications at 23°C: Typical Performance at 90 V Bias

FND-100Q

Abstract: FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E
Contextual Info: High-performance emitters & detectors for the most demanding applications PerkinElmer Optoelectronics PerkinElmer Optoelectronics provides Sensor, Lighting and Digital Imaging technologies to speed the development of breakthrough applications for customers in industrial, safety & security, consumer and biomedical markets.

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

TRANSISTOR ED203

Abstract: FND10 MAN-3A 2N3980 LA 4301 do ic 4532A free germanium Germanium drift transistor texas instruments LED Display TIL epitaxial mesa
Contextual Info: T H E O P T O E L E C T R O N IC S D A T A B O O K Few people in the electronics industry realize that optoelectronics technology has a history which precedes the invention of the integrated circuit. It is also a relatively unknown fact that Texas instruments was a pioneer in the

FND-100

Abstract: FND100 FND-100Q FND100Q
Contextual Info: E G & G JUDSON ETE D i 303Qt0S OOQOia? 7 F Series FND-100;FND-100Q;FOD-100 ^ r - 4/-57 - /< f- / / Features • • • High Responsivity Ultra-Fast Rise and Fall Time Isolated Photodiode Chip Large Active Area Wide Spectral Range Low NEP Operating Data and Specifications at 23°C: Typical Performance at 90 V Bias

fnd display

Abstract: FND-10572L02GW
Contextual Info: FND-1057XX02GW Range 4.1" 106 mm 5 x 7 Dot Matrix Display Features: Available options: Dot layout • • • • • • • • • Product not shown actual size High dot intensity Wide viewing angle Range of colours Grey face colour White dot colour

FND-100Q

Abstract: FND-100 FND100 FOD-100 photodiode 67 FND100Q ultrafast photodiode
Contextual Info: E G 8, G / C A N A D A / O P T O E L E K 47E D • 3G3GblO □0GG332 1 ■ CANA F S eries FND-100;FND-100Q;FOD-1QO t v /s j - Features • • • Large Active A rea W id e Spectral R an g e Low N E P • • • High R esponsivity Ultra-Fast Rise and Fall T im e

FND-100

Abstract: FND-100Q FND100 FND100Q FND10 ultrafast photodiode ITT 254 Scans-002678
Contextual Info: E G & G 27E JUDSON 303üb0S D 0000107 I 7 7"-*/-57 F F S e rie s FND-100;FND-100Q;FOP-1QO // Features • • • • • • Large Active Area Wide Spectral Range Low NEP High Responsivity Ultra-Fast Rise and Fall Time Isolated Photodiode Chip Operating Data and Specifications at 23°C: Typical Performance at 90 V Bias

InGaAs quadrant

Abstract: C30822E UV245BG UV-215BQ C30971 C30641EH-TC FFD-100 YAG-100A
Contextual Info: Photodiodes for High-Performance Applications PIN Photo- PIN Photodiodes InGaAs and Si PIN Diodes, Quadrant Detectors, UV-Enhanced diodes For Industrial Applications InGaAs and Si PIN Diodes – Quadrant Detectors – UV-Enhanced Applications • Telecom

FND-100

Abstract: FND-100Q FND100Q FFD-040A FND100 FFD-200 FFD-100
Contextual Info: F Series FND-100;FND-100Q Features Large Active Area Wide Spectral Range Low NEP » High Responsivity • Ultra-Fast Rise and Fall Time Isolated Photodiode Chip Operating Data and Specifications at 23 °C: Typical Performance at 90 V Bias C h aracteristic