3G30 Search Results

VTE-C15AL

Contextual Info: SbE D 3G30bDT D001214 GaAIAs Infrared Emitting Diodes 42=1 B i V C T V T E -C 1 5 A L 15 mil Chip — 880 nm E G & G VACTEC D E SC R IP T IO N P A C K A G E D IM E N S IO N S inch mm EG&G Vactec fabricates its LED chips using a state-of-the-art liquid phase

C30872

Abstract: RCA 410 RCA H 410 c30872 application notes ir photodiode 0351 S546 photodiode avalanche u 5601 TO8 package
Contextual Info: E G & G/CANADA/OPTOELEK I t C i l IO D • 3G30L1G OGDD11S S6ñ « C A N A Electro Optics Photodiode C30872 DATA SHEET Large Area Silicon Avalanche Photodiode for General-Purpose Applications IHigh Quantum Efficiency — 85% typical at 900 nm 18% typical at 1060 nm

VTT0942

Abstract: VTT0943 VTT0944
Contextual Info: 5 bE 3G30b0T D GGD1177 .040" NPN Phototransistors Low Cost Hermetic TO-18 Flat Window Pkg 7B1 • VCT V TT 0 9 4 2 , 43, 44 T—41—61 E G & G VACTEC PACKAGE DIMENSIONS inch mm .5 0 ( 1 2 . 7 ) ■206 ( 5 .2 3 ) ’ .1 7 8 ( 4 . 5 2 ) 2 0 5 ( S .2 1 ) CASE 53

C30844

Abstract: C30845 rca 632 quadrant photodiode rca C30846 quadrant photodiode 303dbl0 92LS-S56S "S56S" PIN quadrant detector
Contextual Info: RC/1 E G & G/CA N A D A / O P T OELEK 3G30fc.lD ODOOIDI Tfl4 « C A N A IO Electro Photodiode C30843 Optics C30844, C30845, C30846 DATA SHEET Quadrant N-Type Silicon p-i-n Photodetectors • Broad Range of Photosensitive Suface Areas — 5 mm2 to 100 mm2 ■ Low Operating \foltage —

NEP 250

Abstract: DDD031S PDA-38 PDA-46-1
Contextual Info: E G & 6/CANADA/0PT0ELEK M7E D • 3G30L1Ü ÜG00312 b ■ PDA Series _ CANA t - h i-s s Features • • Linearity Over Wide Dynamic Range Cross Talk Between Elements <1% • Wide Spectral Range • Planar Diffused Structure Operating Data and Specifications at 23°C

C30644E

Abstract: InGaAs apd photodiode C30644 C30645E photodiode Avalanche photodiode (APD) FOR POWER RCA 432 RCA H 432 C30644ECER C30645 C30645ECER
Contextual Info: E I G t & G/CANADA/OPTOELEK C i l 3G30bl0 IO OOOOO'ì? 432 H C ANA Planar InGaAs ÁPD C30644, C30645 DATA SH EET E le c t r o Optics • Spectral response range 1100 to 1700 nm ■ High responsivity ■ Low capacitance ■ Fast response time ■ Low dark current and noise

31AA

Abstract: CLD31 VTD31 VTD31AA Photodiode vactec
Contextual Info: Sb E D 3G30bD^ OODlin 02 T • ■p-41-S I VCT VTD31, VTD31AA VTP Process Photodiodes C L D 3 1 , 3 1 A A IN D U S T R Y E Q U IV A LE N T E G 8c 0 VACTEC PACKAGE DIMENSIONS inch (mm) CASE 13 PRODUCT DESCRIPTION CERAMIC CHIP ACTIVE AREA: .026 in2 (16.73 mm2)

VTT0942

Abstract: VTT0943 VTT0944
Contextual Info: 5bE 3G30b0T D □□□1177 .040" NPN Phototransistors Low Cost Hermetic TO-18 Flat Window Pkg E 751 • VCT V T T 0 9 4 2 , 43, 44 T —41—61 G & G VACTEC PACKAGE DIMENSIONS inch mm ■2 0 6 ( 5 .2 5 ) .5 0 ( 12 .7 ) (0 51) CASE 53 PRODUCT DESCRIPTION

VTP100A

Contextual Info: 5bE D 3G30bCH OODlObB 2 5 b VCT VTP100A VTP Process Photodiodes E G & G VACTEC T-41-51 PACKAGE DIMENSIONS inch mm .7 5 ( 19 . 1 ) CATHODE MARK 4 5 ° X .0 3 5 ( 0 . 8 9 ) - r • MINIMUM NOM. - .2 3 0 ( 5 .« 4 ) SENSITIVE .2 1 0 ( 5 .3 3 ) SURFACE CATHODE

photodiode vtb 5041

Abstract: k420 VTB5040B VTB5041B
Contextual Info: SbE D • 3G30bGT DT D VTB Process Photodiodes [ fi & £ BIVCT V T B 5 04 0 B , 5041 B VACTEC PACKAGE D IM EN SIO N S inch mm] PRODUCT DESCRIPTION CASE 14 Planar silicon photodiode in a “flat" window, dual lead TO-5 package. The package incorporates an infrared rejec­

RCA 32

Abstract: C86069E-14 C86072E-13 C86072E-14
Contextual Info: 1 E G & G/CANADA/OPTOELEK V B M B IDE D ÆM Electro • 3G30blü 0 D 0 0 0 3 cì 3 ■ C ANA IlU f IOptics NEWSLETTER PRELIMINARY DATA SHEET SERIES C86069 AND C86072 1550 nm Edge Emitting LED's The RCA series of 1550 nm LED's are edge emitting InGaAsP diodes produced by

RCA c30808

Abstract: TAG60 3G30 L568 C30822 photodiode C30807 C30809 C30810 d28j 35XL
Contextual Info: E G & G/CANADA/OPTOELEK 3G30blQ ID □□□□!□! 7T3 ICANA Photodiode I t C J C30807, C30808, C30809 C30810, C30822, C30831 Optics E le c ,r o l DATA SHEET ' V f'S T 3 N-Type Silicon p-i-n Photodetectors Broad Range of Photo­ sensitive Surface Areas 0.2 mm2 to 100 mm2

SIECOR Fiber Optic cable

Abstract: SIECOR Fiber Optics Siecor 10-dimensional C86045EV1 C86045EV2 C86045EV3 C86045G C86052E C86053E
Contextual Info: c E Q 8, 6/CANADA/0PT0ELEK 10E J> • 3G30blQ 000005Ô 7 M C A N A ■ B 0 * MM Electro ■ WMWm I Optics 1300 nm Pulsed Laser Series DATA SHEET C86045EV1 C86045EV2 C86045EV3 C86045G C 86053E C86053G - Removable cap - Hermetic package with glass window - Multimode fiber

Contextual Info: E G & 6/CAN ADA /OPTOELEK • m A ■ l l f IG D ■ rm i Electro I Optics 3G30bl0 a0G01b3 T3Q « C A N A InGaAs Photodiodes C30986 Series DATA SH EET Fo r Detection of 10 0 0 to 1 7 0 0 nm Radiation Transim pedance Pre am p lifie r M odules W ith or W ithout Integral Fib e r Optic Pigtails

VTB1112BI

Contextual Info: S la E D 3G30bCH G001G34 VTB Process Photodiodes E G 8. G MSS H V C T VT B 11 12B I, 13BI 7 VACTEC PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 19 TO-46 LENSED HERMETIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) Small area planar silicon photodiode in

resistor 5w 1kOhm

Contextual Info: Super Mox Series High-voltage Super Mox resistors have been developed to meet the precision temperature stability requirements of high-accuracy and high-voltage systems. Super Mox combines proprietary non-inductive resistance system and design to achieve low temperature coefficient, low voltage coefficients, high stability and

RETICON

Abstract: RETICON CCD RETICON photodiode array 512 Reticon photodiode array 1024 pixel RL1288DAQ-011 Reticon 256 reticon photodiode array RC07 RL1282D RL1288D
Contextual Info: E G & G RETICON 1ÔE D • 3030735 0003050 4 ■ RL1282D, RL1284D, RL1288D D Series Tapped RETICON High Speed Charge-Coupled Photodiode Array EG&G Reticon's RL1282D, RL1284D and RL1288D are ultrahigh-speed, self-scanned charge-coupled linear arrays with video output taps every 128 diodes. The RL1282D has two

Contextual Info: ykiyjxiyki _ General Description _Features M axim ’s DG300-DG303 and DG300A-DG303A CMOS dual and quad analog sw itches com bine low pow er operation w ith fast sw itch in g tim es and superior DC and AC sw itch characteristics. On resistance is less

5W resistor 10 ohms

Contextual Info: High Voltage Uncoated resistor element pictured for demonstration purposes only. Finished product is coated with silicone. 1.38" / 35mm ±2 Series MOX910 MOX920 MOX930 MOX940 MOX950 MOX960 MOX970 L ±1mm Power Max. Oper. Res. Rating W Voltage Range (Ω)

RETICON 128 application notes

Contextual Info: K Series JLeGsB RET1CON Wide Aperture Linear Photodiode Array W Introduction The EG&G Reticon K Series linear photodiode arrays are designed for applications that require higher sensitivity and wider dynamic range than is available with square element geometries. Devices in this series contain 128, 256, 512 or

Contextual Info: Preliminary n ^ ^ E MB Series E e G R E T IC O N 64,128, and 256 Channel Amplifier-Multiplexer Array Chips Introduction Key Features The R L0064/0128/0256M B fam ily o f integrated C M O S circuit chips is intended to provide flexible low -noise am plification

Contextual Info: ; 8. 6 / C A N A D A / O P T O E L E K n • m lOE D 3D3üblG OOQOOn ô ■ CANA 7^/-¿>7 ÆM Electro W # InGaAsP Infrared Emitters ■ Optics 1300 nm L E D S E R IES DATA S H EET C86057E SERIES - Dual-in-Line package Single or multimode fiber C86013E - Coaxial package multimode fiber

Contextual Info: E G & G/CANAD A/O PTOELEK IO D • 303DblQ DOODObS «Ì22 H C A N A C86051E Series GaAIAs Injection Lasers T -w -ù s Developmental Types 800-900 nm Gallium Aluminum Arsenide Injection Lasers for Pulsed Operation With Integral Fiber Optic Output Cables and Connectors

3a331

Abstract: 3N153 datasheet SC10 ntc 3J683 3V152 FUSE SMD tn MMC Electronics America 2G300 NTC 22K 0805 3N33
Contextual Info: Surface Mount DIA NTC THERMISTORS ELECTRONICS A Subsidiary of 98.11.10 NTC Chip Thermistors ELECTRONICS SMD Type NTC Thermistors Using our company's unique materials, product design, and manufacturing technologies, we have been able to produce smaller and increasingly higher precision