TN20 Search Results

tn2010l

Abstract: TN2010 TN201
Contextual Info: BW 5P& TN201 OL, TN241 OL N-Channel Enhancement-Mode MOS Transistors PRODUCT SUMMARY TO-92 TO-226AA V(BRJDSS PART NUMBER 'X ' •d (A) TN2010L 200 10 0.18 TN2410L 240 10 0.18 BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN Performance Curves: VNDB24 3 1 ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted)

TN2010T

Contextual Info: TN2010T N-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 200 11 0.8 to 3.0 0.12 Features Benefits Applications D D D D D D D D D D D High-Voltage Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Transistors, etc.

TN2010T

Abstract: Marking Code For TN2010 R1 MARKING CODE
Contextual Info: TN2010T N-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 200 11 0.8 to 3.0 0.12 Features Benefits Applications D D D D D D D D D D D High-Voltage Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Transistors, etc.

TN2010

Contextual Info: Temic TN2010T S e m i c o n d u c t o r s N-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS M i n (V ) rDS(on) 200 Max (Q) 11 Features V G S< th)(V ) ID (A) 0.8 to 3.0 0,12 Benefits Low On-Resistance: 9.5 Q Secondary Breakdown Free: 220 V

2A 5A10

Abstract: NSD106 NSD104 NSD6178 TO-202 transistor NPN 2N4239 2N5321 D40D10 D40D11 D40D13
Contextual Info: NATL SEMICÔND DISCRETE 2SE D- • bSG113Q GQ377âS 1 ■ 7"^/ NPN Medium Power Transistors by Ascending Vceo (Continued) H fe @ lc /V Ce Vce (sat) (V) ’ Vceo (V) Min Max (mA/V) NSE181 PN3568 TN2017 60 60 60 50 40 50 250 120 200 10/1 150/1 200/10 0.9 0.25

Contextual Info: TN203 Porting a Program to Dynamic C Introduction Dynamic C has a number of improvements and differences compared to many other C compiler systems. This application note gives instructions and suggestions for porting a C program from other compilers to Dynamic C.

TN20

Contextual Info: NI C THERMISTORS SMD TYPE • TN20, TN23, TC20 Series • • • • Fesistance tolerance. ±5%, ±10% R=25°C E value tolerance.±3%, ±5% (B25 / 50) Termination. Solder plated nickel barrier

Contextual Info: TN2010T N-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 200 11 0.8 to 3.0 0.12 Features Benefits Applications D D D D D D D D D D D High-Voltage Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Transistors, etc.

VNDB24

Abstract: TN201 VN2406L
Contextual Info: VNDB24 N-Channel Enhancement-Mode MOSFET TYPE PACKAGE Single TO-220 • VN2406D Single TO-92 TO-226AA • VN2406L, TN201 OL, TN2410L Single TO-237 • VN2406M Single Chip • Available as VNDB1CHP DEVICE TYPICAL CHARACTERISTICS 1 2 3 4 5 V DS (V) 1 2 V GS (V)

512-Point

Contextual Info: TN201 Fast Fourier Transforms on the Rabbit 2000 INTRODUCTION The Fourier transform is frequently used to analyze and modify real-world signals and waveforms. The Fourier transform is usually defined as ∞ X f = ∫ x ( t )e – j2πft dt . –∞ When the independent variable corresponds to time, the transform variable corresponds to frequency, in which case X(f) is called the spectrum of x(t). The original x(t) may be recovered from

3C85

Abstract: 3E25 4C65 CBW308 PA11 tn2010 philips 3C85 ferrite ring cores
Contextual Info: Philips Components Product specification Ferrite ring cores toroids TN20/10/7 RING CORES (TOROIDS) Effective core parameters SYMBOL PARAMETER VALUE UNIT Σ(I/A) core factor (C1) 1.30 mm−1 Ve effective volume 1465 mm3 Ie effective length 43.6 mm Ae effective area

TN2010T

Contextual Info: TN2010T N-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 200 11 0.8 to 3.0 0.12 Features Benefits Applications D D D D D D D D D D D High-Voltage Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Transistors, etc.

TN2010T

Contextual Info: TN2010T N-Channel Enhancement-Mode MOS Transistor Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 200 11 0.8 to 3.0 0.085 Features Benefits Applications D D D D D D D D D D D High-Voltage Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Transistors, etc.

HASH

Contextual Info: TN209 Using the MD5 Hash Library This technical note describes the Message Digest version 5 MD5 hashing algorithm. MD5 is a one-way hash algorithm that addresses two main concerns that are created when communicating over a network: authenticity and data integrity. MD5 is fast and simple, yet offers a higher level of security than MD4 and

Contextual Info: TN205 How to Get a µC/OS-II Application Running µC/OS-II is a highly configurable, real-time operating system. It can be customized using as many or as few of the operating system’s features as needed. This application note outlines: • the configuration constants used in µC/OS-II,

2U 37 diode

Abstract: M810S KT934B diode 2N4000 2N2196 KT934G KT646A 2N6390 2N2197 semelab 2N2197
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 25 30 35 40 >= 50 BSX46•6 MH8106 MS106 MS106 BCX55-6 TN2017 2N2017 BC141B ~g~~t~g 55 60 65 70 2N2197 BD415 2N6551 BC141C BSX46·16 BCX55·16 2SD1615 2SD1615 2S01615A 2SD1615A BD320 SD1527·8 BFR22

BIOS example source code

Abstract: 0x00000 PC BIOS Source code TN206
Contextual Info: TN206 How Dynamic C Cold-Boots a Rabbit Target This document describes how Dynamic C versions prior to DC 7.10 bootstrap a Rabbit CPU-based target. Dynamic C assumes that target controller boards using the Rabbit CPU have no pre-installed firmware. It takes advantage of the Rabbit’s bootstrap mode, which allows memory and I/O writes to take place over

TN-200

Abstract: Rabbit 3000 M68HC11 TN200
Contextual Info: TN200 SPI Using the Rabbit Clocked Serial Ports The Serial Peripheral Interface SPI is a four-wire full-duplex synchronous serial data link that is implemented in many microcontrollers and peripheral devices. The SPI was originally developed by Motorola to

RABBIT TN202

Abstract: 256K STACK RAM
Contextual Info: TN202 Rabbit Memory Management In a Nutshell The Rabbit CPU has a Memory Management Unit MMU that controls how logical memory addresses map into physical addresses, and a Memory Interface Unit that controls how physical addresses map into actual hardware.

2N6591

Contextual Info: NATL SEMICÔND DISCRETE 2SE ». • bSG1130 G0377Ô5 1 ■ NPN Medium Power Transistors by Ascending Vceo (V) Min NSE181 PN3568 TN2017 60 60 60 50 40 50 250 120 200 TN2102 65 40 2N5321 D40D10 D40D11 D40D13 D40D14 NSD6178 75 75 75 75 75 75 40 50 120 50 120

Z-World little g

Abstract: 8 pin eprom bios chips TN207 Rabbit 2000 software
Contextual Info: TN207 Rabbit Cloning Board Introduction The Rabbit Cloning Board copies designated portions of flash memory from one Rabbit-based controller the master to another (the clone). Dynamic C version 6.50 or later is needed to use the cloning board. Fast cloning, where the data transfer rate is the maximum allowed by the crystal frequency, was introduced

TN2010L

Contextual Info: .Zf in c o rp o ra te d VNDB1 DIE N-Channel Enhancement-Mode MOS Transistor V N D B 1C H P * TN2010L TN2410L VN2406D/L/M VN2410L/M ‘ Meets or exceeds specification for all part numbers listed below For additional design information please consult the typical performance curves VNDB24.

TN2010T

Contextual Info: TN2010T Siliconix NĆChannel EnhancementĆMode MOS Transistor Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 200 11 0.8 to 3.0 0.085 Features Benefits Applications D D D D D D D D D D D HighĆVoltage Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Transistors, etc.

62P65

Abstract: 2P40 2P80 TN20 2P50 PA11 62P50 TN20/13/6
Contextual Info: Philips Components Product specification Iron powder ring cores toroids TN20/13/6 RING CORES (TOROIDS) Effective core parameters SYMBOL PARAMETER VALUE UNIT Σ(I/A) core factor (C1) 2.44 mm−1 Ve effective volume 1020 mm3 Ie effective length 49.9 mm Ae