C3081 Search Results

Contextual Info: E 6 & 6/CANADA/OP TOELEK R C /1 3D30blD DDD01DS 33T « C A N A 10 T - V /- Photodiode C30817 DATA SH EET Optics Silicon Avalan che Photodiode for G e n eral-Purp ose Applications • High Quantum Efficiency — 85% typical at 900 nm — 18% typical at 1060 nm

tic 1060

Contextual Info: E G & G/C ANADA/OPTOELEK ID 303Qb]>a DOOGIGI 7^3 « C A N A Photodiode i t e i C30807, C30808, C30809 Optics E ,e c t n o l C30810, C30822, C30831 DATA SHEET V l ’ S " 3 N-Type Silicon p-i-n Photodetectors L-571 C30810 1-568 C30807 C30831 C30808 C30809,

RCA c30808

Abstract: TAG60 3G30 L568 C30822 photodiode C30807 C30809 C30810 d28j 35XL
Contextual Info: E G & G/CANADA/OPTOELEK 3G30blQ ID □□□□!□! 7T3 ICANA Photodiode I t C J C30807, C30808, C30809 C30810, C30822, C30831 Optics E le c ,r o l DATA SHEET ' V f'S T 3 N-Type Silicon p-i-n Photodetectors Broad Range of Photo­ sensitive Surface Areas 0.2 mm2 to 100 mm2

C30807

Abstract: C30810 C30822 C30822 photodiode C3081 k2645 C30808 C30809 C30831 C30839
Contextual Info: N-Type Silicon PIN Photodetectors C30807, C30808, C30809, C30810, C30822, C30831 EVERYTHING IN A NEW LIGHT. Description Features This family of N-type silicon p-i-n • Broad Range of Photosensitive Surface Areas 0.2 mm2 to 100 mm2 photodiodes is designed for use in a wide

C30817

Abstract: RCA C30817 LXA 102 103 PTS 400 C3081 QQG0107 921S-4
Contextual Info: E 6 & 6/CANADA/OPTOELEK 10 » yy- r 3D30fc>10 ÜÜ001D5 33^ B K A N A WM flTB ÆM Electro Photodiode C30817 DATA SHEET • mw#loptics Silicon Avalanche Photodiode for General-Purpose Applications ■ High Quantum Efficiency — 85% typical at 900 nm — 18% typical at 1060 nm

C30817E

Abstract: datasheet apd 1550
Contextual Info: PerkinElmer’s C30659 Series includes a Silicon or InGaAs Avalanche Photodiode with a hybrid preamplifier. It is supplied in a single modified 12-lead TO-8 package. The avalanche photodiodes used in these devices are the C30817EH, C30902EH, C30954EH, C30956EH,

C1383 NPN transistor collector base and emitter

Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
Contextual Info: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,

Contextual Info: G & G/CANADA/OPTOELEK WM • IQ 3D3DL1D 0G000M4 1TÔ io l «CANA Solid State Detectors ~ MW Electro Optics and Devices Developmental Types C30950 Seríes Photodiodes Very Wide Bandpass Silicon Avalanche Photodiode Preamplifier Modules Available With Integral Light Pipes For Fiber Optic

Contextual Info: MOTOROLA O rder this docum ent by M C3081/D SEMICONDUCTOR TECHNICAL DATA TO VDE UL & CSA SETI ® SEMKO DEMKO BABT NEMKO G lo bal Optoisola to r 6-P in DIP Zero-Cross Optoisolators Triac Driver Output C3081 M OC3082 [IFT = 15 m A Max] [IFT = 10 m A Max]

FND-100Q

Abstract: FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E
Contextual Info: High-performance emitters & detectors for the most demanding applications PerkinElmer Optoelectronics PerkinElmer Optoelectronics provides Sensor, Lighting and Digital Imaging technologies to speed the development of breakthrough applications for customers in industrial, safety & security, consumer and biomedical markets.

C30817

Abstract: C30954E ISO-9001-87 C30872 C30916E c30954 C30956E C30956 c30955e avalanche photodiodes
Contextual Info: J L ,E G slG CANADA LTD. Optoelectronics Divisio Formerly i t C A Effective January 1,1991 ISO-9001-87 Cert *001975 Photodiode C30954E, C30955E, C30956E DATA SHEET Large Area Long Wavelength Enhanced Silicon Avalanche Photodiodes for General-Purpose Applications

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

MAX8770

Abstract: ICS954310 motherboard samsung ba41 MDB41 PC87541 QUANTA C3229 C3198 PC87541 sil3512 quanta
Contextual Info: 1 2 3 4 5 CPU Yonah/Merom 478 PIN micro FC-PGA 1 RJ9 Block Diagram P3,4 14.318MHz FSB 667 MHz(166X4) A LVDS LCD A LVDS P7 CLOCK GEN DDRII 400/533/667 Calistoga DVI M56 UNBUFFERED DDRII SODIMM CRT P11 P2 P12 945GM/PM R/G/B ICS954310 R/G/B 1466 PIN (micro FCBGA)

foxconn g41

Abstract: BT2322 NS681601P max8736 A4304 QFN65 c548b A3401 MS72-1-01 943GML
Contextual Info: 5 4 3 2 1 Schematics Page Index Title / Revision / Change Date D C B Page 01 02 03 04 05 06 07 08 09 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 Rev. 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1

al330

Abstract: tic triac MOC3061
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA *1 & VDE UL ® BS SEMKO DEMKO NÊMKO BABT ® SETI CSA C3081 MOC3082 M OC3083 [IFT * IS m A Max] 6-Pin DIP Optoisolators Triac Driver Output 800 Volts [IFT > 10 mA Max] [IFT = 5 mA Max] The MOC3O01, M OC3082 and M OC3083 devices consist of gallium arsenide Infrared

diode d1n914

Abstract: d1n914 DIODE d1n914 C30817E C30659-1550-R2A InGaas PIN photodiode, 1550 NEP C30950 Silicon and InGaAs APD Preamplifier Modules C30954E avalanche photodiode 1550nm sensitivity
Contextual Info: 117142_C30659.qxd 6/21/04 2:33 PM Page 1 Preliminary Data Sheet C30659-900-1060-1550nm Series Silicon and InGaAs APD Preamplifier Modules Applications Range Finding LIDAR Featur es System bandwidth 50 MHz and 200 MHz Ultra low noise equivalent power NEP

C30902S

Abstract: C30817E C30817 C30955EH
Contextual Info: Photodiodes for High-Performance Applications Avalanche Avalanche Photodiodes Silicon and InGaAs APDs Photodiodes FOR Industrial & ANALYTICAL Applications Avalanche Photodiodes – Silicon and InGaAs APDs Applications • Laser range finder • Scanning video imager

C30817E

Abstract: C30955EH
Contextual Info: PhotodiodeS฀For฀hiGh-PerFormAnce฀APPlicAtionS฀ Avalanche Photodiodes Silicon and InGaAs APDs Avalanche Photodiodes – Silicon and InGaAs APDs Applications • Laser range inder • Free space communication Product฀description hese rear entry “reach-through” silicon APDs ofer the best compromise in terms of cost and

C30817

Abstract: s915 C30872 C30954E C30955E tic 1060 C30956E s914 C30916E 92LS-S916
Contextual Info: £ n G & G/CANADA/OPTOELEK e / ID » l Electro Optics 3 D 3 D b lO O O O O IH ^ bbO ICANA 'T '- y / '- S V Photodiode C30954E, C30955E, C30956E DATA SHEET Large Area Long Wavelength Enhanced Silicon Avalanche Photodiodes for General-Purpose Applications • High Quantum Efficiency —

foxconn g41

Abstract: max8736 NS681601P PCIE52 Maxim MAX8771 foxconn KB3910SFC1 Foxconn MS70 ICS9LPR321 BT 342 project
Contextual Info: 5 4 3 2 1 Schematics Page Index Title / Revision / Change Date D C B Page 01 02 03 04 05 06 07 08 09 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 Rev. 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0

C30817E

Contextual Info: 117142_C30659.qxd 6/21/04 2:33 PM Page 1 Preliminary Data Sheet C30659-900-1060-1550nm Series Silicon and InGaAs APD Preamplifier Modules Applications Range Finding LIDAR Featur es System bandwidth 50 MHz and 200 MHz Ultra low noise equivalent power NEP

bq24721

Abstract: inventec INVENTEC San Antonio 10 SP8K10SFD5_ROHM GMT_G680LT1_SOT23_5P SP8K10 R63311 44C2 kbc1100 21L3005
Contextual Info: San Antonio 10EJV PreMP BUILD 0307 EE DATE POWER DATE DRAWER DESIGN CHECK RESPONSIBLE DATE CHANGE NO. REV SIZE = 3 FILE NAME : XXXX-XXXXXX-XX P/N XXXXXXXXXXXX INVENTEC TITLE VER : SA10EJV SIZE CODE A3 DOC. NUMBER REV A02 CS SHEET 1 OF 51 TABLE OF CONTENTS

C30817

Contextual Info: Modules and optical Receivers PIN AND APD Si PIN and APD Modules, InGaAs APD Modules Receiver Modules For Analytical AND Industrial Applications Si PIN and APD Modules – InGaAs APD Modules Applications • Laser range finder Product Description These modules comprise of a photodetector PIN or APD and a transimpedance amplifier in the

C30817

Abstract: photodiode preamplifier C30950E RCA C30817 preamplifier voltage RCA Solid State avalanche photodiodes C30950 equivalent C30902E C30950EL
Contextual Info: C A INC/ ELECTRO OPTICS IDE D I 74A4L.75 000D04M 4 | ItCil */|- Solid State Detectors ~ Electro Optics and Devices Developmental Types C30950 Series Photodiodes Very Wide Bandpass Silicon Avalanche Photodiode Preamplifier Modules Available With Integral Light Pipes For Fiber Optic