303QB Search Results

tic 1060

Contextual Info: E G & G/C ANADA/OPTOELEK ID 303Qb]>a DOOGIGI 7^3 « C A N A Photodiode i t e i C30807, C30808, C30809 Optics E ,e c t n o l C30810, C30822, C30831 DATA SHEET V l ’ S " 3 N-Type Silicon p-i-n Photodetectors L-571 C30810 1-568 C30807 C30831 C30808 C30809,

VTP5040

Abstract: VTP5041 VTP5841
Contextual Info: _ 5 bE D • 303QbtH DD01075 T76 * V C T 4 1 IR VTP5040. VTP Process Photodiodes T-41-51 E G & G VACTEC PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION Planar silicon photodiode in a “flat" win­ dow, dual lead TO-5 package. Cathode is common to the case. VTP5041 IR

GH1-203QK

Abstract: GH1-303QA GH1-303QB GH1-303QD GH1-303QE GH1-303QG GH1-303QH ma200c
Contextual Info: GH1 电感式接近开关 03 外形编号 检 测 距 离 齐平 1 Sn[mm] 2 非齐平 NPN 常开 GH1-303QA NPN 常闭 GH1-303QB NPN 一开一闭 具 DC PNP 常开 GH1-303QD 备 型 PNP 常闭 GH1-303QE PNP 一开一闭 型 号 AC 型 二线制 常开 GH1-303QG

Contextual Info: 5bE D • 303QbüT 0GÜ1223 431 * V C T GaAIAs Infrared Emitting Diodes VTE5880 T-1 3/4 5 mm Plastic Package — 880 nm T - 4 1 - 13 VACTEC _ PACKAGE D IM EN SIO N S inch (mm) 1 00 (25.4) MINIMUM .OSO (I 27) .030 (0 7$)’ 240 (6 10) 220 (5 59) .34 (8.6)

C30971EL

Contextual Info: E G & G/CANADA/O PTOE LEK ItC JI 303Qbl0 ÜDDDBS4 TDT • CANAT"'- ET Electro Optics and Devices 4^/- S ' / Solid State Detectors Developmental Types C30971 E, C30971 EL Photodiodes Silicon Photodetectors for High-Speed, Wide Bandwidth Applications ■ Spectral Response Range - 10% Points - 400 to 1000 nm

Contextual Info: VT300 Series PHOTOCONDUCTIVE CELL PACKAGE DIMENSIONS inch mm m ABSOLUTE MAXIMUM RATINGS PARAMETER CONTINUOUS POWER DISSIPATION DERATE ABOVE 25° C SYMBOL RATING UNITS Pd 125 mW APd /A T 2.5 mW/°C Ta - 40 to + 7 5 °C TEMPERATURE RANGE OPERATING AND STORAGE

Contextual Info: E G 8t G / C A N A D A / O P T O E L E K It C il 1ÜE D • 3G3GblO □□□□□S3 T *CANA Infrared Emitters Electro Optics Eiectrooptics and Devices S86017E, S86018E S86020E, S86021E S86017E S86018E o High-Speed Gallium Aluminum Arsenide IR-Emitters for Continuous

metal detectors IC

Abstract: HgCdTe metal detector sensor INSB PHOTODIODE J16PS-P6-S10M quadrant detector photodiode ge j10quad J16PS metal detector
Contextual Info: JK EC k G JUDSOñl q Figure 29-1 Position Sensor D etector Configuration J16PS, J12PS, J10PS Position Sensors A Ge, InAs, or InSb position sensor consists of a single elem en t photodiode w ith a quadrupole electrode geom etry. T hese devices can provide lin e a r X-Y

J16-18A-R01M-HS

Abstract: J16-8SP-R05M-HS J16-18A-R01M germanium photodiode
Contextual Info: J ^ E G zG JU D SO N Germanium Detector Operating Notes 0.8 to 1.8 jim 'f§jjpilljf!' Biii 'viflnJP General Responsivity Operating Circuit J16 Series detectors are high-quality G erm anium photodiodes designed for the 800 to 1800 nm w avelength range. The equivalent circuit for a G erm a­

NEP 250

Abstract: photodiode "interference filter" photodiode interference filter SALEM 15-V 5006 OPTICAL
Contextual Info: G E & G JUDSON 27E D • 3030bGS QQQQ1ÔS 3 ■ DFA Series DFA-XXXX1 _ Features • • Built-in Low Noise Amplifier Large Active Area • Groundable Case • Built-in Interference Filter • Shielded Amplifier • Wide Spectral Range Operating Data and Specifications at 23°C