3D30BLD Search Results

Contextual Info: E 6 & 6/CANADA/OP TOELEK R C /1 3D30blD DDD01DS 33T « C A N A 10 T - V /- Photodiode C30817 DATA SH EET Optics Silicon Avalan che Photodiode for G e n eral-Purp ose Applications • High Quantum Efficiency — 85% typical at 900 nm — 18% typical at 1060 nm

ELLS 110

Abstract: avalanche photodiode bias avalanche photodiode preamplifier voltage C30919E
Contextual Info: E G & G/CANADA/OPTOELEK 1 3D30blD DDDDIB^ 711 « C A N A WM MWk ÆWElectro I i l i # Ph o to d io d e Hhil C30919E DATA SH EET • Optics Photodiode-Preamplifier Module Completely Hybridized Temperature-Compensated Silicone Avalanche Photodiode-Preamplifier Module

C30817

Abstract: s915 C30872 C30954E C30955E tic 1060 C30956E s914 C30916E 92LS-S916
Contextual Info: £ n G & G/CANADA/OPTOELEK e / ID » l Electro Optics 3 D 3 D b lO O O O O IH ^ bbO ICANA 'T '- y / '- S V Photodiode C30954E, C30955E, C30956E DATA SHEET Large Area Long Wavelength Enhanced Silicon Avalanche Photodiodes for General-Purpose Applications • High Quantum Efficiency —

Contextual Info: G S C/CANADA/OPTOELEK 10E C • 3030bl0 0000051 ICANA 1 C86006E. C86010E GaAlAs Injection Lasers Developmental Types 820 nm Gallium Aluminum Arsenide Injection Lasers for CW or Pulsed Operation With Integral Fiber Optic Cables and Connectors RCA developm ental types C86006E

2N3818

Abstract: laser rca 2l688 C86000E rca laser eg and g laser diode RCA Solid State S20 rca OP-12 laser diode module 820 nm
Contextual Info: G & G/CANADA/OPTOELEK IG ì> 3030blQ GDGDDSG 4T1 • CAN A Laser t ie c t r o u p t ic s i t c j i and Devices Developmental Type Low Threshold CW-Operated Gallium Aluminum Arsenide Injection Laser ■ Typical Threshold Current — 75 mA ■ Continuous or Pulsed Operation at Room Temperature

RCA 4046

Abstract: RCA Solid State rca 036 C30948E 3ls543sr1
Contextual Info: F f & g/CANADA/OPTOELEK id ]> • 3 Q 3 0 b l 0 □□□□□40 SSE « C A N A Solid State Detectors n n n ElectroOpt.cs I m U P w l and Devices Developm ental TvDe C30948E Photodiode Silicon Avalanche Photodiode Having Very High Modulation Capability ■ High Quantum Efficiency 85% typical at 830 and 900 nm