3D30BD Search Results

VTE5880

Contextual Info: 5bE D • 3D30bDT Daoigsa 431 M V C T GaAIAs Infrared Emitting Diodes VTE5880 T-1 3/4 5 mm Plastic Package — 880 nm T - 4 I - 15 VACTEC _ PACKAGE DIMENSIONS inch (mm) ■OSO (1 2 7 ) .0 3 0 (0 7 $ ) 1 0 0 ( 2 5 .4 ) MINIMUM ' .3 4 ( 8 .6 ) .1 7 ( 4 .3 )

VTP6060

Contextual Info: VTP Process Photodiodes VTP6060 P A C K A G E D IM E N SIO N S inch mm P R O D U C T D ESC R IP T IO N CASE 15 TO-8 HERMETIC CHIP ACTIVE AREA: .032 in2 (20.6 mm2) Large area planar silicon photodiode in a "flat” window, dual lead TO-8 pack­ age. Cathode is common to the case.

Contextual Info: VTS VTS Process Photodiodes PRODUCT DESCRIPTION 86 PACKAGE DIMENSIONS inch mm These planar, P on N, large area silicon photodiodes are characterized for use in the photovoltaic (unbiased) mode. Their excellent speed and broadband sensitivity makes them ideal for detecting light from

Contextual Info: VTP1232 VTP Process Photodiodes PACKAGE DIMENSIONS inch mm MINIMUM , .34 (8.6) .17 (4.3) .050 (1 .27 ) .030 (0.76 ) 240 (6 .10 ) .220 (5 .59 ) k — ~ ^ -N O M . (1 .52 ) .026 (0 .66 ) [ . 0 1 7 (0 .4 3 ) JL .200 (5 .08 ) .180 (4 .57 ) Also available in infrared transmitting/

Contextual Info: ¿ ^ E G e G JU D SO N Lead Selenide Detectors 2.0 to 6.0 jim Description • J14TO Series The J 14 Series detectors are Lead Selenide PbSe photoconductive (PC) detectors designed for operation in the 2-6 |o,m w avelength region. The w ave­ length of peak response depends on the