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VTP9412 Datasheets (4)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
VTP9412		PerkinElmer Optoelectronics	VTP Process Photodiode	Original	PDF	18.05KB	1
VTP9412		EG&G	FAST RESPONSE HIGH DARK RESISTANCE - Silicon Diodes	Scan	PDF	157.88KB	1
VTP9412		EG&G Vactec	VTP Process Photodiodes	Scan	PDF	60.38KB	1
VTP9412		EG&G Vactec	VTP Process Photodiodes	Scan	PDF	61.58KB	1

VTP9412 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
s 9413 Abstract: VTP9412 VTP9413 Contextual Info: SLE D • SOSObD^ 0001GÛM VTP Process Photodiodes E 6 & G TÔD « V C T VTP9412, 9413 T -41-51 VACTEC PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 20 Small area planar silicon photodiode in a recessed ceramic package. Chip is coated with a protective layer of clear	OCR Scan	vtp9412 t-41-51 vtp9413 x1012 +1s 9413	PDF
VTP9412 Contextual Info: VTP Process Photodiodes VTP9412 PACKAGE DIMENSIONS inch mm CASE 20 6 mm CERAMIC CHIP ACTIVE AREA: .0025 in2 (1.6 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Small area planar silicon photodiode in a recessed ceramic package. Chip is coated with a protective layer of clear epoxy. These diodes	Original	vtp9412	PDF
Contextual Info: VTP Process Photodiodes VTP9412H PACKAGE DIMENSIONS inch mm CASE 20 6 mm CERAMIC CHIP ACTIVE AREA: .0025 in2 (1.6 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Small area planar silicon photodiode in a recessed ceramic package. Chip is coated with a protective layer of clear epoxy. These diodes	Original	vtp9412h	PDF
Contextual Info: VTP Process Photodiodes VTP9412 PACKAGE DIMENSIONS inch mm CASE 20 6 mm CERAMIC CHIP ACTIVE AREA: .0025 in2 (1.6 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Small area planar silicon photodiode in a recessed ceramic package. Chip is coated with a protective layer of clear epoxy. These diodes	Original	vtp9412	PDF
vtp9412h Contextual Info: VTP Process Photodiodes VTP9412H PACKAGE DIMENSIONS inch mm CASE 20 6 mm CERAMIC CHIP ACTIVE AREA: .0025 in2 (1.6 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Small area planar silicon photodiode in a recessed ceramic package. Chip is coated with a protective layer of clear epoxy. These diodes	Original	vtp9412h	PDF
C1383 NPN transistor collector base and emitter Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383 Contextual Info: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,	Original	10-foot c1383 npn transistor collector base and emitter npn transistor c1383 c1383 transistor +7c1383 npn transistor light-dependent resistor specification c1983 transistor pin configuration of c1383 transistor lhi968 lhi878 c1383	PDF
VTP8651 Abstract: VTP1112 VTP4085 VTP1188S VTP11188S VTP1232 silicon photodiode array VTP1012 VTP7840 VTP100 Contextual Info: VTP Process Photodiodes VTP100 PACKAGE DIMENSIONS inch mm CASE 52 FLAT SIDELOOKER CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a molded plastic sidelooker package. The package material is infrared transmitting (blocking visible light).	Original	vtp100 vtp8651 vtp1112 vtp4085 +6vtp1188s vtp11188s vtp1232 silicon photodiode array vtp1012 vtp7840	PDF
VTP9412 Abstract: VTP9413 Contextual Info: SbE D • 3030^0^ OOOlQôM VTP Process Photodiodes TÔG IVCT V T P 9 4 1 2, 9413 T-41-51 E 6 & 6 VACTEC PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 20 6 mm CERAMIC CHIP ACTIVE AREA: .0025 in2 (1.6 mm2) Small area planar silicon photodiode in a recessed ceramic package. Chip is	OCR Scan	vtp9412 t-41-51 vtp9413 7x10-14	PDF
H0A0872-n55 Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12 Contextual Info: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1	OCR Scan	1n5722 1n5723 1n5724 1n5725 +161n6264 1n6265 1n6266 2004-90xx 2600-70xx 2n5777-80 h0a0872-n55 h0a1405-1 h0a0865-l51 h0a1405 hoa708-1 hoa9 til78 phototransistor moc70t3 ir diode til38 h0a1874-12	PDF
VTP1220FBH Abstract: VTS3082 VTB9412BH VTB1013B VTP1012H VTS3185H VTB8441BH VTD34H VTS3085H VTP4085H Contextual Info: 1745-2012:QuarkCatalogTempNew 9/17/12 5:02 PM Page 1745 20 Photodiodes, Phototransistors and IR Emitters RoHS Electrical/Optical Characteristics @ 25°C Stock No. Fig. Dark Current IO Shunt Resist. RSH Spectral Application Range H=100 fC 2850K A/W @ nm H=0	Original	2850k vts3082h vts3085h vts3185h +8vtp1220fbh vts3082 vtb9412bh vtb1013b vtp1012h vtb8441bh vtd34h vtp4085h	PDF
ID12 Abstract: VTP9412 Contextual Info: VT P 9 4 1 2 VTP Process Photodiodes PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 20 Small area planar silicon photodiode in a recessed ceram ic package. Chip is coated w ith a protective layer of clear epoxy. These diodes exhibit low dark current under reverse bias and	OCR Scan	vtp9412 id-14 3030bch id12	PDF
Contextual Info: VTP 9412 VTP Process Photodiodes PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 2D Small area planar silicon photodiode in a recessed ceramic package. Chip is coated with a protective layer of clear epoxy. These diodes exhibit low dark current under reverse bias and	OCR Scan	vtp9412 3g30b0i	PDF