3725 TRANSISTOR Search Results

c 3725 transistor

Abstract: 2N3725 3725 transistor 3725
Contextual Info: 2N 3725 SILICON PLANAR NPN HIG H -VO LTAG E, H IG H -CU R REN T SWITCH The 2N 3725 is a silicon planar epitaxial transistor in T O -3 9 metal case. It is a high-voltage, high-current switch used for memory applications requiring breakdown voltages up to 50V

3725A

Abstract: MMPQ3725A
Contextual Info: MOTORCLA SC XSTRS/R F 1SE D I D [ J f lt 0 1 2 ^ I 'f iß -lS MMPQ3725, A CASE 751B-03, STYLE 1 SO-16 M A X IM U M RATINGS M M PQ 3725A Unit 40 50 V dc 60 70 Vdc Sym bol M M PQ 3725 Collector-Emitter Voltage v CEO Coiiector-Emitter V oltage VCES R ating V EB

MHQ3725

Abstract: D2072 MHQ3724
Contextual Info: MOTOROLA SC XSTRS/R F 12E D | QUAD DUAL-IN LINE NPN HERMETIC SILICON MEMORY DRIVER TRANSISTORS . . . designed for high-current, high-speed switching, ferrite core and plated w ire m em ory drivers, and M O S translator applications. t3t.75S4 00flt>S7ä T |

2N3724

Abstract: 2N3725 2n3725a transistor 2N3725
Contextual Info: Datasheet Central' 2N3724 2N3725 2N3725A Semiconductor Corp. NPN SILICON TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-39 CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION The CENTRAL SEMICONDUCTOR 2 N 3 7 2 4 , 2 N 3 7 2 5 , 2 N 3 7 2 5 A types are Silicon NPN Planar Epitaxial Transistors

LTC3706

Contextual Info: LTC3725 Single-Switch Forward Controller and Gate Driver FEATURES • ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO The LTC 3725 is a controller for a single-switch forward converter and includes an on-chip gate driver. High Speed Gate Driver for Forward Converter

lt3725

Abstract: ic regulator 48v 30a 500w Full bridge transformer FDC2512 HAT2165 LTC3706 LTC3725 PA0815 PA1294 Si7450DP
Contextual Info: LTC3725 Single-Switch Forward Controller and Gate Driver U FEATURES DESCRIPTIO • The LTC 3725 is a controller for a single-switch forward converter and includes an on-chip gate driver. ■ ■ ■ ■ ■ ■ ■ ■ High Speed Gate Driver for Forward Converter

gate drive pulse transformer Gate Drive Characteristics Requirements

Abstract: 500w Full bridge transformer 500w forward lt3725 1W zener diode, 91V regulation using optoisolator feedback 1,5uf 63v FDC2512 optoisolator high voltage LTC3725
Contextual Info: LTC3725 Single-Switch Forward Controller and Gate Driver U FEATURES DESCRIPTIO • The LTC 3725 is a controller for a single-switch forward converter and includes an on-chip gate driver. ■ ■ ■ ■ ■ ■ ■ ■ High Speed Gate Driver for Forward Converter

IC 4047

Abstract: N2219 ic 4046 bsw830 BSW82 N 2222 N2222A BSW83 2N3301 2N3302
Contextual Info: NPN Silicon Transistors NPN Silicon Epitaxial Planar Transistors lc = 5C 0mA) in TO-18 and TO-39 (~ T O - 5 ) metal cases for high speed switching Type Characteristics @ Tam b= 25°C Maximum Ratings f" l„ Tam b— ff 2 5 °C Tease— V CE = 10 V = 10 mA

MPQ3725

Abstract: MP03725 MPQ3546 MPQ3725A MHQ3546
Contextual Info: MPQ3546 SILICON For Specifications, See MHQ3546 Data. MPQ3725 (silicon) MPQ3725A NPN SILICON A N N U L A R Q UAD CO RE D R IV E R TRANSISTO RS Q U AD D UAL-IN-LINE . . . designed for medium-current, high speed switching and driver applications. NPN SILICON

BSy38

Abstract: Motorola* 2n708 2N1711 MOTOROLA DH3467CD 2N706 BSY39 SP3725 SP3725QDB tch98 2N706A
Contextual Info: Discrete Devices Transistors Cont. Ultra High-Speed Logic Switches Electrical Characteristics @ 25° C Maxim um Ratings M Vcb Volts . NPN PD Ambient £1 Type VEB Volts h fe V c E (S a t) @ I q /I b @ ic Min/Max mA Volts m A/m A ft MHz Cob PF M ax tON ns

2N3724A

Abstract: n37 transistor n3714 3724A 2N3724 2N3725A
Contextual Info: TYPES 2N3724, 2N3724A, 2N3725. 2N3725A N-P-N SILICON TRANSISTORS B U L L E T IN N O . D L-S 7 3 1 0 0 8 1 , JU N E 1 9 6 7 - R E V IS E D M A R C H 1973 FA ST, H IG H -VO LTAG E, HIGH-CURRENT C O R E D R IV ER S • h FE Guaranteed from 10 mA to 1.5 A •

TRANSISTOR 7912A

Abstract: TRANSISTOR 7915A 2.2uf/hall smda 4 pin
Contextual Info: IP120 SERIES IP7900 SERIES LM120 SERIES LM7900 SERIES 1.5 AMP NEGATIVE VOLTAGE REGULATOR 1 1 2 2 3 FEATURES 3 Pin 1 – Ground Pin 2 – VOUT Case – VIN K Package – TO–3 Pin 1 – Ground Pin 2 – VOUT Case – VIN R Package – TO–66 • OUTPUT VOLTAGE OF -5V, -12V and -15V

TRANSISTOR 7915A

Abstract: TRANSISTOR 7912A 7915a LM7915 to-3 7912a 7915 fixed voltage regulator to-3 7905a 7915 TO-3 Transistor LM 7912 LM7915 SMD PACK
Contextual Info: IP120 SERIES IP7900 SERIES LM120 SERIES LM7900 SERIES 1.5 AMP NEGATIVE VOLTAGE REGULATOR 1 1 2 2 3 FEATURES 3 Pin 1 – Ground Pin 2 – VOUT Case – VIN K Package – TO–3 Pin 1 – Ground Pin 2 – VOUT Case – VIN R Package – TO–66 • OUTPUT VOLTAGE OF -5V, -12V and -15V

2N2270 equivalent

Abstract: 2N2317 DH3725CN Q2T3725 motorola 2N2270 to-18 2N2008 2N1711 MOTOROLA 2N1990 MOTOROLA bfy76 2N2102
Contextual Info: Transistors Cont. Discrete Devices Genera Purpose Amplifiers (Cont.) Electrical Characteristics @ 25° C Maximum Ratings Type Polarity PD Ambient mW 2N1990 2IM2008 VCB Volts VCE Volts NPN 600 100 _ NPN 175 110 VEB Volts 3 8 H f e @ 'C VçE(Sat) @ lc / 'B

MPQ3725

Contextual Info: Datasheet f| M M centrai MPQ3725 NPN SILICON QUAD TRANSISTOR Semiconductor Corp. JEDEC T O - 116 CASE 145 A d a m s Ave., Hauppauge, N Y 11788 U S A Phone 516 435-1110 F A X (516) 435-1824 Manufacturers of World Class Discrete Semiconductors DESCRIPTION

2N1711 MOTOROLA

Abstract: DH3467CD equivalent 2N2219 2N2219A BSX45 bsy38 BSY39 SP3725 SP2222AF bsx46 equivalent SP2484F
Contextual Info: Transistors Cont. Discrete Devices Space Saving Devices Electrical Characteristics @ 25° C Maxim um Ratings Ambient P q Type Polarity One Both Side Sides mW mW VCE<Sat) @ Ic / lß H f e ic Vcb Volts VCE Volts VEB Volts Min/Max mA Volts m A/m A Frequency

Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-116 PACKAGE T O -116 14 PIN C E R A M IC D IP yp i* T O -116 w 11 f VcEO sus VOLTS Ic (m ax) AM PS hfE @ V ^ ce m in/m ax @ m A /V VcE(sat) @ Ic^B V @ m A /inA C <£P P (M H z) 2N 6987 60 .6 100/300@ 150/10

BSX39

Abstract: BSX29 BSX26 IC 4013 transistor BSX26 2n3013 BSX28 bsx20 bsx39
Contextual Info: nrz SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL Ä 7 # K ÄÖ 8 IILI O T® !M 0(gS SMALL SIGNAL TRANSISTORS NPN TRANSISTORS FOR FAST AND ULTRA FAST SWITCHING vCEO hpE min/max C? Type (mA (V) vCE(sat) max ICrtB (V) (mA) »T min (MHz) 0.25 0.4 30/3 0.7 0.6 10/1

MD6100

Abstract: PNP UHF transistor MD2219A MD2369 MD2369A MD2369B MD2905A MD5179 MD7000 MD7001
Contextual Info: Dual Transistors TO-78 Case Continued vCEO (V) @«c (mA) =E e vCE (V) <0 MD7003B MD8001 MD8002 MD8003 VCBO (V) LU MD7000 MD7001 MD7002 MD7002A MD7002B MD7003 MD7003A •c (mA) MD982 MD2219A MD2369 MD2369A MD2369B MD2905A MD5179 DESCRIPTION > TYPE NO. (V)

Contextual Info: Dual Transistors TO-78 Case Continued TYPE NO. DESCRIPTION •c VCBO v CEO (mA) (V) (V) :E @ lc e v CE (mA) (V) MATCHING VCE(SAT) @ >C (mA) (V) (MHz) h FE Vb e MAX *TYP MIN *r MAX MIN MIN MIN MAX % (mV) MD982 PNP AMPL/SWITCH 600 60 50 35 . 10 10 0.5 150

equivalent transistor 2N1711

Abstract: MOTOROLA 2n2102 TRANSISTOR DH3725 transistor bfy39 SP3725 NPN transistor 2n2222A plastic package 2N2708 2N784A Motorola* 2n708 2N706A
Contextual Info: Discrete Devices Transistors Cont. Ultra High-Speed Logic Switches Electrical Characteristics @ 25° C Maxim um Ratings M Vcb Volts . NPN PD Ambient £1 Type VEB Volts h fe V c E (S a t) @ I q /I b @ ic Min/Max mA Volts m A/m A ft MHz Cob PF M ax tON ns

2N3725

Abstract: 2N3724 NSQ3724 NSQ3725 dc iris driver
Contextual Info: NSQ3724 NSQ3725 QUAD DUAL - IN LINE NPN HERMETIC SILICON MEMORY DRIVER TRANSISTORS • • • • FAST SWITCHING TIMES LOW COLLECTOR-EMMITTER SATURATION VOLTAGE DC CURRENT GAIN SPECIFIED - 100 m A dc TO 1.0 Adc TO-116 CERAMIC PACKAGE MAXIMUM RATINGS SY M B O L

equivalent transistor 2N1711

Abstract: 2N2484 equivalent transistors transistor 2n1711 NPN transistor 2n2222A plastic package 2N328A transistor 2N929 2N1025 BT2222A DH3725CN MOTOROLA 2n2102 TRANSISTOR
Contextual Info: Discrete Devices Transistors Cont. Low Level Amplifiers Maxim um Ratings Type Polarity Pd Ambient mW Electrical Characteristics @ 25° C VCB VCE V e b Volts Volts Volts V c E (S a t) @ Ic / lß H p E *C Min/Max mA Volts m A/m A ft MHz Min NF@f Cob pF

BGY17

Contextual Info: BGY17 SILICON PLANAR NPN QUAD, H IG H -C U R R EN T SWITCH The BGY 17 is an assembly of fo u r isolated silicon planar epitaxial NPN transistors* in Jedec T O -1 16 1 4 -lead dual in -line plastic package, specially designed fo r m edium -current, high­ speed switching and driver applications.