35WC Search Results

ADP35WA-15

Abstract: ADP35WA12.0
Contextual Info: ADP 35WA/35WC Series Single Output, 35 Watt, Universal AC-DC Power Supplies The ADP 35WA and 35WC Series are light, compact, and 3100 Tower Boulevard efficient power supplies. These supplies are ideal for a wide range of limited space applications from notebook

Contextual Info: CY7C263-35WC IL08D C-MOS 64 K 8,192 x 8 -BIT PROM —TOP VIEW— 18 A7 IN VDD 24 1 19 21 A6 IN 2 23 A8 IN 22 23 A5 IN 3 22 A9 IN 1 2 A4 IN 4 21 A10 IN 3 4 A3 IN 5 20 CS IN 5 6 A2 IN 6 19 A11 IN 7 8 A1 IN 7 18 A12 IN 20 A0 O0 IN 8 17 O7 OUT OUT 9 16 O6 OUT

C2665

Abstract: C2668 7c26 C2662 C266 27C64 CY7C266 R1250 C2666
Contextual Info: 1CY 7C26 6 CY7C266 8Kx8 Power-Switched and Reprogrammable PROM Features Functional Description • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military) • Low power — 660 mW (commercial)

CY7C263-35PC

Abstract: 7C261 CY7C263 CY7C26345DMB cerdip z PACKAGE 7C264 C261 CY7C261 CY7C264 f1b0
Contextual Info: CY7C261 CY7C263/CY7C264 CYPRESS Features • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military) • Low power — 660 mW (commercial) — 770 m\V (military) • Super low standby power (7C261)

16L88

Abstract: PALC20 PALC16R6-20DMB cypress 16R4 PALC16L8-30DMB 16L8 16R4 16R6 16R8 PALC16R6-30DMB
Contextual Info: 256=^2 ooQb^o s d c y p MbE D CYPRESS SEMICONDUCTOR PAL C20 Series ~ SEMICONDUCTOR Features • CMOS EPROM technology for « p ro ­ grammability • High performance at quarter power • — tpo = 25 ns — ts = 20 ns — tco = 15 ns — Ice = 45 mA • High performance at military

Contextual Info: Features 32K x 8 Power-Switched and Reprogrammable PROM • Capable of withstanding > 4001V static discharge • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 25 ns commercial — 35 ns (military) • Low power — 275 mW (commercial)

Contextual Info: y PLDC20G10B/PLDC20G10 CYPRESS Features • Fast — Commercial: tpo = 15 ns, tco — 10 ns, ts = 12 ns — Military: tpo = 20 ns, tco = 15 ns, ts = 15 ns • Low power — Ice max.: 70 mA, commercial — Ice max.: 100 mA, military • Commercial and military temperature

LC 7258

Abstract: 7C266 203CE
Contextual Info: CY7C266 / CYPRESS 8K x 8 Power-Switched and Reprogrammable PROM Features • TTL-compatible I/O • CMOS for optimum speed/power • Direct replacement for 27C64 EPROMs • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military)

27C64

Abstract: CY7C266 R1250 direct replacement
Contextual Info: 66 CY7C266 8Kx8 Power-Switched and Reprogrammable PROM Features Functional Description • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military) • Low power — 660 mW (commercial) The CY7C266 is a high-performance 8192 word by 8 bit

C2021 m

Abstract: C2021 palc16r8 PALC16R 16R4 programming specification ic w6 sem 2015 ic equivalent PALC20 PALC16R6-30WMB
Contextual Info: K :Æ^ = PAL C20 Series r fÆ CYPRESS :.-. = Sr SEMICONDUCTOR Reprogrammable CMOS PALC 16L8,16R8,16R6,16R4 Features • CMOS EPROM technology for repro­ grammability • Higb performance at quarter power

Contextual Info: CY27H512 PRELIMINARY ^ /C Y P R E S S 64K X Features • CMOS for optimum speed/power • High speed — t.4A = 25 ns max. commercial — t^A — 35 ns max. (military) • Low power — 275 mW max. — Less than 85 mW when deselected • Byte-wide memory organization

Contextual Info: V CYPRESS Features 32K X8 High-Speed CMOS EPROM Functional Description rapid transition to and from three-stated outputs. The CY27H256 is a high-perform ance, 256K CM OS E P R O M organized in 32 Kbytes. It is available in industry-standard 28-pin, 600-mil DIP, 32-pin LCC and

Contextual Info: PLDC20G10B/PLDC20G10 CMOS Generic 24-Pin Reprogrammable Logic Device Generic architecture to replace stan­ dard logic functions including: 20L10, 20L8,20R8,20R6,20R4,12L10,14L8, 16L6,18L4,20L2, and 20V8 Eight product term s and one OE product term per output

C2792

Abstract: C2794 C279
Contextual Info: -• = = = = CYPRESS - ~ ~ SEMICONDUCTOR CY7C279 ^ " = Reprogrammable 32K x 8 Registered PROM • Windowed for reprogrammability • CMOS for optimum speed/power • High speed — 3 ns max. set-up — 35 ns clock to output • Low power — 660 m\V commercial

Contextual Info: ¿/iiuiu. luööutiy, rwufucuy io, Revision: August 18,1994 ^ CYPRESS CY27H010 128K X 8 High-Speed CMOS EPROM Features Functional Description • CMOS for optimum speed/power • Highspeed — tAA = 25 ns max. commercial — *a a = 35 ns max. (military)

CERAMIC LEADLESS CHIP CARRIER

Abstract: la crosse technology smd UJ 99 7C245A CY7C245A 0G152
Contextual Info: W CYPRESS Features • • W indowed for reprogram m ability • C M O S for optim um speed/power • • • H igh speed — 15-ns ad dress set-up • — 10-ns clock to output • Low power — 330 m W com m ercial for —25 ns — 660 mW (m ilitary) •

7C271

Abstract: CY7C271-45WMB 333Q C271 7C274 CY7C271 CY7C274 CY7C274-55WC 57C27-1 7C271-55
Contextual Info: CY7C271 CY7C274 32K x 8 PROM PowerSwitched and Reprogrammable Features Functional Description • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 30 ns commercial — 35 ns (military) • Low power — 660 mW (commercial)

CY7C291A

Abstract: CY7C292A CY7C293A 57C29
Contextual Info: F# CYPRESS Features • Windowed for reprogrammability • CMOS for optimum speed/power • High speed — 20 ns commercial — 25 ns (military) CY7C291A CY7C292A/CY7C293A 2K X 8 Reprogrammable PROM • Direct replacement for bipolar PROMs • Capable o f withstanding >2001V stat­

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

7C261

Abstract: 7c264
Contextual Info: CY7C261 CY7C263/CY7C264 WÈP CYPRESS 8K x 8 Power-Switched and Reprogrammable PROM floating-gate technology and byte-wide in­ telligent programming algorithms. The CY7C261, CY7C263, and CY7C264 are plug-in replacements for bipolar de­ vices and offer the advantages of lower

LC 7258

Abstract: C-274
Contextual Info: bSE D C Y P R ES S S E M I C O N D U C T O R SSÖRbbE QQ1GS50 T M «CYP CY7C271 CY7C274 CYPRESS SEMICONDUCTOR Features Functional Description • CMOS for optimum speed/power • Windowed for reprogrammability • Highspeed •— 30 ns commercial •— 35 ns (military)

20G10B-20

Abstract: 12L10 16L6 18L4 20L10 20L8
Contextual Info: r PLDC20G10B/PLDC20G10 CYPRESS Features • Fast — Commercial: tpn = 15 ns, tc o = ID us, tg = 12 ns — Military: tPD = 20 ns, tc o = 15 ns, ts — 15 ns • Low power — Ice max.: 70 mA, commercial — Ic e max.: 100 mA, military • Commercial and m ilitary tem perature

aj4 diode

Abstract: CY7C277 658f 7C277
Contextual Info: CYPRESS 4bE SEMICONDUCTOR J /s S - I SSfl'lbbS GG0bôb3 fl B C Y P D CY7C277 CY7C279 CYPRESS SEMICONDUCTOR Reprogrammable 32K x 8 Registered PROM Programmable address latch enable input Programmable synchronous or asynchronous output enable 7C277 On-chip edge-triggered output

al p13

Abstract: CERAMIC LEADLESS CHIP CARRIER cerdip z PACKAGE cy7c291 CY7C293AL-35PC PACKAGE CERAMIC LEADLESS CHIP CARRIER LCC CY7C291A CY7C292A CY7C293A
Contextual Info: CY7C291A CY7C292A/CY7C293A F# CYPRESS Features • Windowed for reprogrammability • CMOS for optimum speed/power • High speed — 20 ns commercial — 25 ns (military) 2K X 8 Reprogrammable PROM • Direct replacement for bipolar PROMs • Capable o f withstanding >2001V stat­