35QMB Search Results

CY7C263-35PC

Abstract: 7C261 CY7C263 CY7C26345DMB cerdip z PACKAGE 7C264 C261 CY7C261 CY7C264 f1b0
Contextual Info: CY7C261 CY7C263/CY7C264 CYPRESS Features • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military) • Low power — 660 mW (commercial) — 770 m\V (military) • Super low standby power (7C261)

Contextual Info: Features 32K x 8 Power-Switched and Reprogrammable PROM • Capable of withstanding > 4001V static discharge • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 25 ns commercial — 35 ns (military) • Low power — 275 mW (commercial)

CY7C276-25JC

Abstract: CY7C276 C2768 tCKA
Contextual Info: CY7C276 CYPRESS SEMICONDUCTOR Features • 0.8-micron CMOS for optimum speed/ power • High speed for commercial and military — 25-ns access time • • • • 16-bit-wide words Three programmable chip selects Programmable output enable 44-pin PLCC and 44-pin LCC

CY27H010-45PC

Abstract: CY27H010-55Wmb 27H010 CY27H010
Contextual Info: CY27H010 « r CYPRESS Features 128K X8 High-Speed CMOS EPROM F unctional D escription • CMOS for optimum speed/power • High speed — t^A — 25 ns max. commercial — *aa — 35 ns max. (military) • Low power — 275 mW max. — Less than 85 mW when deselected

46E SMD CODE

Abstract: 7C271 7C274 CY7C271 CY7C274 C2716 RAAW
Contextual Info: MbE » CYPRE SS S EM ICONDUCTOR CYPRESS SEMICONDUCTOR Features • CMOS for optimum speed/power • Windowed for reprogrammability • Highspeed — 30 as commercial — 35 as (military) • Low power — 660 mW (commercial) — 715 mW (military) • Super low standby power

27H256

Abstract: mil std 1275 power supply H-256 H2565
Contextual Info: PRELIMINARY 32K X Features • CMOS for optimum speed/power • High speed — tAA = 25 ns max. commercial — tAA = 35 ns max. (military) • Low power — 275 mW max. — Less than 85 mW when deselected • Byte-wide memory organization • 100% reprogrammable in the

Contextual Info: V CYPRESS Features 32K X8 High-Speed CMOS EPROM Functional Description rapid transition to and from three-stated outputs. The CY27H256 is a high-perform ance, 256K CM OS E P R O M organized in 32 Kbytes. It is available in industry-standard 28-pin, 600-mil DIP, 32-pin LCC and

Contextual Info: CY7C291A CY7C292A/CY7C293A 'W CYPRESS = SEMICONDUCTOR Reprogrammable 2K x 8 PROM Features • Windowed for reprogrammability • CMOS for optimum speed/power • High speed — 2 0 ns commercial — 25 ns (military) • Low power — 660 mW (commercial and military)

CERAMIC LEADLESS CHIP CARRIER

Abstract: la crosse technology smd UJ 99 7C245A CY7C245A 0G152
Contextual Info: W CYPRESS Features • • W indowed for reprogram m ability • C M O S for optim um speed/power • • • H igh speed — 15-ns ad dress set-up • — 10-ns clock to output • Low power — 330 m W com m ercial for —25 ns — 660 mW (m ilitary) •

7C271

Abstract: CY7C271-45WMB 333Q C271 7C274 CY7C271 CY7C274 CY7C274-55WC 57C27-1 7C271-55
Contextual Info: CY7C271 CY7C274 32K x 8 PROM PowerSwitched and Reprogrammable Features Functional Description • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 30 ns commercial — 35 ns (military) • Low power — 660 mW (commercial)

CY7C291A

Abstract: CY7C292A CY7C293A 57C29
Contextual Info: F# CYPRESS Features • Windowed for reprogrammability • CMOS for optimum speed/power • High speed — 20 ns commercial — 25 ns (military) CY7C291A CY7C292A/CY7C293A 2K X 8 Reprogrammable PROM • Direct replacement for bipolar PROMs • Capable o f withstanding >2001V stat­

7C261

Abstract: 7c264
Contextual Info: CY7C261 CY7C263/CY7C264 WÈP CYPRESS 8K x 8 Power-Switched and Reprogrammable PROM floating-gate technology and byte-wide in­ telligent programming algorithms. The CY7C261, CY7C263, and CY7C264 are plug-in replacements for bipolar de­ vices and offer the advantages of lower

LC 7258

Abstract: C-274
Contextual Info: bSE D C Y P R ES S S E M I C O N D U C T O R SSÖRbbE QQ1GS50 T M «CYP CY7C271 CY7C274 CYPRESS SEMICONDUCTOR Features Functional Description • CMOS for optimum speed/power • Windowed for reprogrammability • Highspeed •— 30 ns commercial •— 35 ns (military)

7C261

Abstract: 7C261-25 C2612 CY7C263-45DC C2613 J-64 CY7C263-35DMB CY7C261 DIODE SMD W12 75 C261
Contextual Info: CYPRESS SEMIC ON DUC TOR MbE D BSfl^bbS □□Qb704 1 n C Y P CY7C261 CY7C263/CY7C264 CYPRESS SEMICONDUCTOR Features 8192 x 8 Power-Switched and Reprogrammable PROM • TTL-compatible I/O • Direct replacement for bipolar PROMs • CMOS for optimum speed/power

Contextual Info: CY7C243 CY7C244 Er - g 3 CYPRESS Features 4K X 8 Reprogrammable PROM • Capable o f withstanding greater than 2001V static discharge • CMOS for optimum speed/power • TTL-compatible I/O • Windowed for reprogrammability • Direct replacement for bipolar

lc 245a

Abstract: DIODE SMD 10 - 25L DIODE SMD 10 25L 7C245A 7c245
Contextual Info: CY7C245A •= CYPRESS • 5V ± 10% V c, commercial and military • I I I.-compatible I/O • Direct replacement for bipolar PROMs • Capable of withstanding greater than 2001V static discharge F e a tu re s • Windowed for reprogrammability • CMOS for optimum speed/power

CY7C263

Abstract: 7C264 7C261 C261 CY7C261 CY7C264 CY7C263-45WC CY7C264-55 cy7c261-45wmb CY7C264-45WMB
Contextual Info: CY7C261 CY7C263/CY7C264 CYPRESS Features • Capable of withstanding greater than 2001V static discharge • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military) • Low power — 660 mW (commercial)

Contextual Info: CY7C271 CY7C274 CYPRESS • - = •— SEMICONDUCTOR Features • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 30 ns commercial — 35 ns (military) • Low power — 660 mW (commercial) — 715 mW (military) • Super low standby power

LC 7258

Contextual Info: CY7C276 CYPRESS SEMICONDUCTOR Features • 0.8-micron CMOS for optimum speed/ power • High speed for commercial and military — 25-ns access time • • • • 16-bit-wide words Three programmable chip selects Programmable output enable 44-pin PLCC and 44-pin LCC

H-010

Abstract: 27H010 CY27H010 h0106 H0108 38-00171-D
Contextual Info: fax id: 3023 1CY 27H0 10 CY27H010 128K x 8 High-Speed CMOS EPROM Features try-standard 32-pin, 600-mil DIP, LCC, PLCC, and TSOP-I packages. These devices offer high-density storage combined with 40-MHz performance. The CY27H010 is available in windowed and opaque packages. Windowed packages allow the device to be erased with UV light for 100% reprogrammability.

02JX

Abstract: cy7c291 CY7C291A CY7C292A CY7C293A SMD Code s13 CY7C291A-45DMB CY7C291-35WMB CY7C291-50QMB l64 diode
Contextual Info: Y P R E S S SEMICONDUCTOR 4bE » D S SflU b a 'T^fc-13-Z* CYPRESS SEMICONDUCTOR Features • Windowed for «program m ability • CMOS for optimum speed/power • High speed -¡•20 ns commercial — 25 ns (military) • Low power — 660 mW (commercial and military)

H256

Abstract: CY27H256 2411AS
Contextual Info: Features • CMOS for optimum speed/power • High speed — tAA = 25 ns max. commercial — tAA — 35 ns max. (military) • Low power — 275 mW max. — Less than 85 mW when deselected • Byte-wide memory organization • 100% reprogrammable in the

7C293A

Abstract: 7C291A
Contextual Info: CY7C291A CY7C292A/CY7C293A î f CYPRESS Features • Windowed for reprogrammability • CMOS for optimum speed/power • High speed — 20 ns commercial 2K X 8 Reprogrammable PROM The CY7C291A, CY7C292A, and CY7C293A are plug-in replacem ents for bipolar devices and offer the advantages of

CY27H010-45PC

Abstract: 27H010-70 27H010-45 27H010 CY27H010
Contextual Info: ^ 0 CY27H010 CYPRESS Features 128K X8 High-Speed CMOS EPROM F unctional D escription • CMOS for optimum speed/power • High speed — t^A — 25 ns max. commercial — *aa — 35 ns max. (military) • Low power — 275 mW max. — Less than 85 mW when deselected