34002 PC Search Results

Q62702-P1103

Abstract: Q62702-P1796 Q62702-P1805 Q62702-P3605
Contextual Info: NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 3400 Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 460 nm bis 1080 nm • Hohe Linearität • SMT-Bauform ohne Basisanschluß, geeignet für Vapor Phase-Löten und IR-Reflow-Löten

AN 34002

Contextual Info: 2008-07-30 Silicon NPN Phototransistor NPN-Silizium-Fototransistor Version 1.0 SFH 3400 Features: Besondere Merkmale: • Spectral range of sensitivity: 460 . 1080 nm • Package: Smart DIL • Special: High linearity • Available only on tape and reel

8p20

Abstract: MTM8P20
Contextual Info: MOTOROLA • SEM ICONDUCTOR TECHNICAL DATA M TH 8P 18 M TH 8P 20 M TM 8P18 M TM 8P20 Designer's Data Sheet P o w e r Field E ffe ct T ra n sisto r P-Channel Enhancement-Mode Silicon Gate TMOS These TM O S P ow er FETs are desig n ed fo r m e d iu m voltage,

ncl 071

Abstract: BUZ330
Contextual Info: MOTOROLA SE M IC O N D U C T O R TECHNICAL DATA P o w e r Field E ffe ct T ra n sisto r N -C h ann el Enh an cem en t-M ode S ilic o n G ate T h is T M O S P o w e r F E T is d e s ig n e d f o r h ig h s p e e d , lo w T M O S P O W E R FET 9 .5 A M P E R E S

25p05

Abstract: TH25P06 25P06 MTH75 25p0 MTH25P06
Contextual Info: MOTOROLA •I SEMICONDUCTOR TECHNICAL DATA MTH25P05 MTH25P06 MTM25P05 MTM25P06 Designer's Data Sheet Power Field Effect Transistor P-Channel Enhancement-Mode Silicon Gate TM OS TMOS POWER FETs 25 AMPERES rDS on = 0.14 OHM 50 and 60 VOLTS T h e s e T M O S P o w e r F E T s a re d e s ig n e d fo r h ig h s p e e d p o w e r

Contextual Info: SIEMENS NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 3400 Chip position CO CM O o ¿mm 4.8 4.4 Active area C3 CD not Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale • Speziell geeignet für Anwendungen im

Contextual Info: SIEMENS NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 3400 Chip position Active area not Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. W esentliche Merkmale Features • • • • • Speziell geeignet für Anwendungen im

foto transistor

Abstract: P1103 phototransistor 500-600 nm TRANSISTOR C 460 GEO06953 Q62702-P1103 Q62702-P1796 Q62702-P1805
Contextual Info: NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 3400 1.1 1.0 0.3 0.2 Chip position 0.1 0.0 4.8 4.4 not connected 2.1 1.9 0.8 0.6 0.5 0.3 1.1 0.9 Active area 0.55 0.7 0.3 Collector 2.7 2.5 Emitter GEO06953 Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.

P1103

Abstract: GEO06953 Q62702-P1103 Q62702-P1796 Q62702-P1805
Contextual Info: NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 3400 1.1 1.0 0.3 0.2 Chip position 0.1 0.0 4.8 4.4 not connected 2.1 1.9 0.8 0.6 0.5 0.3 1.1 0.9 Active area 0.55 0.7 0.3 Collector 2.7 2.5 Emitter GEO06953 Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.

Contextual Info: NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 3400 Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 460 nm bis 1080 nm • Hohe Linearität • SMT-Bauform ohne Basisanschluß, geeignet für Vapor Phase-Löten und IR-Reflow-Löten

Q62702-P1796

Abstract: Q62702-P3605
Contextual Info: NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 3400 Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 460 nm bis 1080 nm • Hohe Linearität • SMT-Bauform ohne Basisanschluß, geeignet für Vapor Phase-Löten und IR-Reflow-Löten

Q65110A2629

Abstract: OHFD0228
Contextual Info: NPN-Silizium-Fototransistor Silicon NPN Phototransistor Lead Pb Free Product - RoHS Compliant SFH 3400 Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 460 nm bis 1080 nm • Hohe Linearität • SMT-Bauform ohne Basisanschluß, geeignet

Contextual Info: NPN-Silizium-Fototransistor Silicon NPN Phototransistor Lead Pb Free Product - RoHS Compliant SFH 3400 Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 460 nm bis 1080 nm • Hohe Linearität • Nur gegurtet lieferbar

OHFD0228

Abstract: Q62702-P1796 Q62702-P3605
Contextual Info: NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 3400 Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 460 nm bis 1080 nm • Hohe Linearität • SMT-Bauform ohne Basisanschluß, geeignet für Vapor Phase-Löten und IR-Reflow-Löten

pulse generator MC14001

Abstract: MC14001 LM005 MC14001 MOTOROLA AN569 IRFPG50 4I501 DS3823
Contextual Info: Order this data sheet by MTH6N100/D , MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data sheet Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS . These TMOS Power FETs are designed for high voltage, high speed power switching applications such as switching regulators,

Q62702-P3604

Contextual Info: S il ic o n P h o t o d e t e c t o r s S i -F o t o d e t e k t o r e n 1. Foto IC für Fernsteuerung rA=25 c Gehäuse Package 1. Photo IC for Remote Control rA=25 c Halbwinkel Halfangle <P deg. Ordering code Typ Type Frequenz Frequency / kHz SFH 5110-30

MTH6N100

Abstract: adc jtm
Contextual Info: MOTOROLA SEM IC O N D U C T O R TECHNICAL DATA MTH6N100 Designer's Data Sheet P o w e r Field E ffe ct T ra n sisto r N -C h an n el E n h an ce m e n t-M od e S ilic o n G ate T M O S T M O S P O W E R FETs 6 AM PERES T h e se T M O S Pow er F ET s are d e sign e d for h igh voltage, high

MTH20P08

Abstract: MTM20P08 20p10 motorola IB78 755M MTH20P10 MTM20P10 S150 MOSFET MTM 20P10 20P10
Contextual Info: MOTOROLA SC MOTOROLA XST R S/R F me b 3b ?2 5 4 D I OOÖ'HOS 3 | - 3 •i SEM IC O N D U CTO R TECHNICAL DATA MTH2 0 P0 8 MTH2 0 P 10 MTM2 0 P0 8 MTM2 0 P 10 Designer's Data Sheet P o w e r F ie ld E f f e c t T r a n s is t o r P-Channel Enhancem ent-M ode

SS LSE 0530

Abstract: LSE 0530
Contextual Info: MOTOROLA SC MO TO ROLA X ST R S/R me D F I b3b?254 O QÖTiOS 3 I 7 ^ 3 • I S E M IC O N D U C T O R TECHNICAL DATA M TH20P08 M TH20P10 M TM 20P08 MTM20P10 Designer's Data Sheet P o w e r Field E ffe c t T ra n sisto r P-C h annel Enh an cem en t-M ode S ilic o n G ate T M O S

TH20P10

Abstract: 20P10 MTH20P10
Contextual Info: MO TO ROLA • S E M IC O N D U C T O R TECHNICAL DATA M TH20P08 M TH20P10 MTM20P08 MTM20P10 Designer's Data Sheet P o w e r Field E ffe c t T ra n sisto r P-Channel Enhancem ent-M ode S ilic o n G ate T M O S T M O S P O W E R FETs 20 A M P E R E S rD S{on = 0.15 O H M

sda2120

Abstract: fm operational amplifier
Contextual Info: 120 MHz PLL for AM/FM Receivers o 'l A SDA2120 DIP 22 The SDA 2120 contains the complete digital section reference oscillator, 20-bit shift register with memory, programmable divider, band select outputs as well as a phase detector, two charge pumps, one current multiplier, and two amplifiers for tuning an AM/FM receiver

433MHZ PCB antenna

Abstract: Remote keyless system A 434 RF Receiver TRANSMITTER PAIR " Car remote keyless entry block diagram keeloq rx decoder SX1212 AN120-00 PIC16F631 RF based remote control block diagram rolling code
Contextual Info: Application Note - AN1200.07 RKE Demo with Encrypted Rolling Code ADVANCED COMMUNICATIONS & SENSING APPLICATION NOTE AN1200.07 Application Note RKE Demo with Encrypted Rolling Code Developed by Leon Li Embedded Software Engineer Semtech Semiconductor Shenzhen Co.,Ltd.

433mhz pcb antenna

Abstract: Car remote keyless entry block diagram Remote keyless system PIC16F677 applications A 434 RF Receiver TRANSMITTER PAIR " PIC16F631 A 434 RF Receiver TRANSMITTER PAIR AN1200 SX1212 433mhz RX 411
Contextual Info: Application Note - AN1200.07 RKE Demo with Encrypted Rolling Code ADVANCED COMMUNICATIONS & SENSING APPLICATION NOTE AN1200.07 Application Note RKE Demo with Encrypted Rolling Code Developed by Leon Li Embedded Software Engineer Semtech Semiconductor Shenzhen Co.,Ltd.

chotherm 1674

Abstract: P4855-1 TC-30AG 32-microinch TO3 SILICONE MICA SHEET torque for SELF TAPPING SCREW 87-HS-9 to225a SIL-PAD density Case 806-05
Contextual Info: SECTION 7 MOUNTING TECHNIQUES FOR THYRISTORS Edited and Updated Figure 7.1 shows an example of doing nearly everything wrong. A tab mount TO-220 package is shown being used as a replacement for a TO-213AA TO-66 part which was socket mounted. To use the socket, the