foto transistor
Abstract: P1103 phototransistor 500-600 nm TRANSISTOR C 460 GEO06953 Q62702-P1103 Q62702-P1796 Q62702-P1805
Contextual Info: NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 3400 1.1 1.0 0.3 0.2 Chip position 0.1 0.0 4.8 4.4 not connected 2.1 1.9 0.8 0.6 0.5 0.3 1.1 0.9 Active area 0.55 0.7 0.3 Collector 2.7 2.5 Emitter GEO06953 Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
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Original
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GEO06953
OHF00309
OHF00327
OHF02341
foto transistor
P1103
phototransistor 500-600 nm
TRANSISTOR C 460
GEO06953
Q62702-P1103
Q62702-P1796
Q62702-P1805
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PDF
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P1103
Abstract: GEO06953 Q62702-P1103 Q62702-P1796 Q62702-P1805
Contextual Info: NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 3400 1.1 1.0 0.3 0.2 Chip position 0.1 0.0 4.8 4.4 not connected 2.1 1.9 0.8 0.6 0.5 0.3 1.1 0.9 Active area 0.55 0.7 0.3 Collector 2.7 2.5 Emitter GEO06953 Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
|
Original
|
GEO06953
OHF00309
OHF00327
OHF02341
P1103
GEO06953
Q62702-P1103
Q62702-P1796
Q62702-P1805
|
PDF
|
Q62702-P1103
Abstract: Q62702-P1796 Q62702-P1805 Q62702-P3605
Contextual Info: NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 3400 Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 460 nm bis 1080 nm • Hohe Linearität • SMT-Bauform ohne Basisanschluß, geeignet für Vapor Phase-Löten und IR-Reflow-Löten
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Original
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OHF00327
OHF02341
GEO06953
Q62702-P1103
Q62702-P1796
Q62702-P1805
Q62702-P3605
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PDF
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