32N90B Search Results
32N90B Price and Stock
Spansion S29GL032N90BFI040A |
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S29GL032N90BFI040A | 173 | 1 |
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Cypress Semiconductor S29GL032N90BFA040FLASH - NOR (SLC) 32Mbit 2M x 16, 4M x 8 2.7V - 3.6V CFI 90ns 90ns 48-BGA Tray |
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S29GL032N90BFA040 | 23 | 1 |
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IXYS Corporation IXGR32N90B2D1Transistor: IGBT; HiPerFAST™; 900V; 22A; 160W; PLUS247™ |
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IXGR32N90B2D1 | 1 |
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SPAN S29GL032N90BFI04INSTOCK |
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S29GL032N90BFI04 | 34 |
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SPAN S29GL032N90BFI030INSTOCK |
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S29GL032N90BFI030 | 27 |
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32N90B Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
32N90B2
Abstract: 32n90
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Original |
32n90b2ic110o-247o-268+1 | |
32N90B2Contextual Info: Advance Technical Information IXGH 32N90B2D1 IXGT 32N90B2D1 HiPerFASTTM IGBT with Fast Diode B2-Class High Speed IGBTs with Ultrafast Diode Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 900 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 900 V VGES |
Original |
32n90b2d1ic110o-24732n90b2 | |
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Contextual Info: Advance Technical Information HiPerFASTTM IGBT with Fast Diode VCES IC25 VCE sat tfi typ IXGR 32N90B2D1 Electrically Isolated Base Symbol Test Conditions VCES TJ = 25OC to 150OC 900 V VCGR TJ = 25OC to 150OC; RGE = 1 MΩ 900 V VGES Continuous ±20 V VGEM |
Original |
32n90b2d1150ocic110125oc+3 | |
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Contextual Info: Advance Technical Information HiPerFASTTM IGBT IXGH 32N90B2 B2-Class High Speed IGBTs IXGT 32N90B2 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 900 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 900 V VGES Continuous ±20 V VGEM Transient ±30 |
Original |
32n90b2ic110o-247o-268 | |
SiS 961
Abstract: 32N90B 720V ISOPLUS247 125OC 32N90B2D1 IF110 32n90 IXGR32N90B2D1 32N9
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Original |
32n90b2d1150ocic110125oc+10 | |
IXGH 32N90B2D1
Abstract: 32N90B2D1 IXGH32N90B2D1 IF110 720v 32N90B2
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Original |
32n90b2d1o-247ic110ixgh 32n90b2d1+4 | |
32N50Contextual Info: HiPerFAST IGBT with Diode IXGH 32N50BU1 IXGH 32N50BU1S v CES ^C25 v CE sat «1, Symbol Test Conditions Maximum Ratings V ces Tj = 25CC to 150CC 500 v CGR T j = 25°C to 150“ C; RGE = 1 M£2 500 V v GES Continuous ±20 V v¥gem Transient ±30 V ^C25 T0 = 25°C |
OCR Scan |
32n50bu132n50bu1so-24732n90bu1+3 | |
7N60B equivalent
Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
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ms-01310-pin5m-1994mo-229+10 |