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    32N90 Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG S29GL032N90DFI023

    - Tape and Reel (Alt: S29GL032N90DFI023)
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    Avnet Americas S29GL032N90DFI023 Tape & Reel 159
    • 1 -
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    • 1000 $4.21
    • 10000 $3.95
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    Rochester Electronics S29GL032N90DFI023 8,800 1
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    Infineon Technologies AG S29GL032N90TFI040

    NOR Flash Parallel 3V/3.3V 32Mbit 4M/2M x 8bit/16bit 90ns 48-Pin TSOP Tray - Trays (Alt: S29GL032N90TFI040)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas S29GL032N90TFI040 Tray 960
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    • 1000 $4.88
    • 10000 $4.40
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    Rochester Electronics S29GL032N90TFI040 22 1
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    • 100 $2.29
    • 1000 $2.05
    • 10000 $1.93
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    Infineon Technologies AG S29GL032N90DFI020

    - Trays (Alt: S29GL032N90DFI020)
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    Avnet Americas S29GL032N90DFI020 Tray 2,600
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    • 10000 $4.36
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    Rochester Electronics S29GL032N90DFI020 1,186 1
    • 1 -
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    • 100 $2.19
    • 1000 $1.96
    • 10000 $1.85
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    Infineon Technologies AG S29GL032N90FFI010

    - Trays (Alt: S29GL032N90FFI010)
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    Avnet Americas S29GL032N90FFI010 Tray 900
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    • 1000 $19.28
    • 10000 $17.39
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    Rochester Electronics S29GL032N90FFI010 5 1
    • 1 -
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    • 100 $2.19
    • 1000 $1.96
    • 10000 $1.85
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    Flip Electronics S29GL032N90FFI010 7,091
    • 1 $13.48
    • 10 $13.48
    • 100 $13.48
    • 1000 $13.48
    • 10000 $13.48
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    Infineon Technologies AG S29GL032N90TFI020

    - Trays (Alt: S29GL032N90TFI020)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas S29GL032N90TFI020 Tray 910
    • 1 -
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    • 100 -
    • 1000 $7.85
    • 10000 $7.08
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    Flip Electronics S29GL032N90TFI020 1,359
    • 1 $5.49
    • 10 $5.49
    • 100 $5.49
    • 1000 $5.49
    • 10000 $5.49
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    Find more 32N90 price and stock on Findchips.com

    32N90 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    32N90B2

    Abstract: 32n90
    Contextual Info: Advance Technical Information HiPerFASTTM IGBT IXGH 32N90B2 B2-Class High Speed IGBTs IXGT 32N90B2 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 900 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 900 V VGES Continuous ±20 V VGEM Transient ±30


    Original     		32n90b2ic110o-247o-268+132n90 PDF

    32N90B2

    Contextual Info: Advance Technical Information IXGH 32N90B2D1 IXGT 32N90B2D1 HiPerFASTTM IGBT with Fast Diode B2-Class High Speed IGBTs with Ultrafast Diode Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 900 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 900 V VGES


    Original     		32n90b2d1ic110o-24732n90b2 PDF

    Contextual Info: Advance Technical Information HiPerFASTTM IGBT with Fast Diode VCES IC25 VCE sat tfi typ IXGR 32N90B2D1 Electrically Isolated Base Symbol Test Conditions VCES TJ = 25OC to 150OC 900 V VCGR TJ = 25OC to 150OC; RGE = 1 MΩ 900 V VGES Continuous ±20 V VGEM


    Original     		32n90b2d1150ocic110125oc+310parameters30-12ar0-12a PDF

    Contextual Info: Advance Technical Information HiPerFASTTM IGBT IXGH 32N90B2 B2-Class High Speed IGBTs IXGT 32N90B2 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 900 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 900 V VGES Continuous ±20 V VGEM Transient ±30


    Original     		32n90b2ic110o-247o-268 PDF

    SiS 961

    Abstract: 32N90B 720V ISOPLUS247 125OC 32N90B2D1 IF110 32n90 IXGR32N90B2D1 32N9
    Contextual Info: Advance Technical Information HiPerFASTTM IGBT with Fast Diode VCES IC25 VCE sat tfi typ IXGR 32N90B2D1 Electrically Isolated Base Symbol Test Conditions VCES TJ = 25OC to 150OC 900 V VCGR TJ = 25OC to 150OC; RGE = 1 MΩ 900 V VGES Continuous ±20 V VGEM


    Original     		32n90b2d1150ocic110125oc+1030-12ar0-12asis 96132n90b720visoplus247if11032n90ixgr32n90b2d132n9 PDF

    IXGH 32N90B2D1

    Abstract: 32N90B2D1 IXGH32N90B2D1 IF110 720v 32N90B2
    Contextual Info: Advance Technical Information IXGH 32N90B2D1 IXGT 32N90B2D1 HiPerFASTTM IGBT with Fast Diode B2-Class High Speed IGBTs with Ultrafast Diode Symbol Test Conditions Maximum Ratings VCES IC25 VCE sat tfi typ = 900 V = 64 A = 2.7 V = 150 ns TO-247 (IXGH) VCES


    Original     		32n90b2d1o-247ic110ixgh 32n90b2d1+4ixgh32n90b2d1if110720v32n90b2 PDF

    32N50

    Contextual Info: HiPerFAST IGBT with Diode IXGH 32N50BU1 IXGH 32N50BU1S v CES ^C25 v CE sat «1, Symbol Test Conditions Maximum Ratings V ces Tj = 25CC to 150CC 500 v CGR T j = 25°C to 150“ C; RGE = 1 M£2 500 V v GES Continuous ±20 V v¥gem Transient ±30 V ^C25 T0 = 25°C


    OCR Scan     		32n50bu132n50bu1so-24732n90bu1+332ns0bu1sb2-2232n50 PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		ms-01310-pin5m-1994mo-229+107n60b equivalent18n50 equivalentixgh 1499mosfet smd 4407ixdd 614c 547 b w57 bjt transistorr1275ns20lr1271ns12cixys cs 20-22 mof1ixtp 220n04t2 PDF