720V Search Results

AN-994

Abstract: IRG4BH20K-S
Contextual Info: PD -93960 IRG4BH20K-S Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • High short circuit rating optimized for motor control, tsc =10µs @ VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed

IRG4PH20K

Abstract: 720v
Contextual Info: PD -91776 IRG4PH20K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed

IRG4PH20K

Abstract: transistor A55
Contextual Info: PD -91776 IRG4PH20K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed

IRG4PH50KD

Abstract: IR 1838 T IRGPH50KD2 IRGPH50MD2 IR 1838 motor IG 2200 19 00001
Contextual Info: PD- 91575B IRG4PH50KD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high

igbt 400V 20A

Abstract: IRG4PH30KD IRGPH30MD2
Contextual Info: PD- 91579A IRG4PH30KD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high

TL 1838

Abstract: IRG4PH50KD
Contextual Info: International 1GR Rectifier PD- 9.1575 IRG4PH50KD PRELIM INARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control tsc=10fis, V cc = 720V , T j = 125°C,

Contextual Info: ShenZhen HuaXinAn Electronics Co.,Ltd Ø12x4.5mm High Impulse Current Gas Discharge Tubes 20KA / 40KA Fast Delivery Time 1：Dimension(mm) Specification of 2R12S-600H Nominal Dc spark-over voltage (100V/s) 480V-720V impulse spark-over voltage 5KV/ s ( 1.2/50us, 6KV)

Contextual Info: PD -91776 International I R Rectifier IRG4PH20K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tsc =10 js, V Cc = 720V , T j = 125°C, V qe = 15V • Combines low conduction losses with high

Contextual Info: PD - 9.1576 International IOR Rectifier IRG4PH50K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLARTRANSISTOR Features • High short circuit rating optimized for motor control, ts C = 1 0 |J S , Vcc = 720V , T j = 125°C, V q e = 15V • Combines low conduction losses with high

Contextual Info: PD- 9.1577A International Rectifier IGR IRG4PH40KD PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc=10MS, V c c = 720V , T j = 125°C,

IRG4PH50K

Abstract: IRGPH50K IRGPH50M
Contextual Info: PD - 9.1576 IRG4PH50K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high

AN-994

Abstract: IRG4BH20K-L IRG4BH20K-S
Contextual Info: PD - 93764 PRELIMINARY TO-263 IRG4BH20K-S, TO-262 IRG4BH20K-L Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Very low turn off losses • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V

lt 39 diode smd

Abstract: smd diode 78a IRG4ZH71KD
Contextual Info: PD - 91729 IRG4ZH71KD PRELIMINARY Surface Mountable Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C,

Contextual Info: PD -91580A IRG4PH30K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed

IRG4PH40K

Abstract: IRGPH40K IRGPH40M
Contextual Info: PD - 9.1578A IRG4PH40K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high

1000V diod

Abstract: irgph30k IRG4PH30K br a55 IRGPH30M
Contextual Info: PD -9.1580 IRG4PH30K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high

IRG4PH20KD

Contextual Info: PD- 91777 IRG4PH20KD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high

rolling shutter with global reset

Abstract: iLCC footprint HD 2006 electronic rolling display
Contextual Info: MT9M002 1.6-Megapixel, 1/4.5-Inch CMOS Image Sensor Uncompromising HD Video Capture Performance Features l DigitalClarity CMOS imaging technology 1/4.5-inch optical format l On-chip, 12-bit analog-to-digital converter ADC l 2.2µm pixel size l High-definition video capture (1280H x 720V,

IRG4PH20KD

Contextual Info: PD- 91777 IRG4PH20KD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high

z922

Abstract: IRG4PH50K 3020H
Contextual Info: International I«R Rectifier PD - 9 .1576 IRG4PH50K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLARTRANSISTOR Features • High short circuit rating optimized for motor control, tsc=10fis, V cc = 720V , T j = 125°C, V g e = 15V • Combines low conduction losses with high

IRGPH50MD2

Abstract: IRGPH50KD2 irgph50kd2 e 035H IRFPE30
Contextual Info: PD- 95189 IRG4PH50KDPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high

AN-994

Contextual Info: PD -95891 IRG4BH20K-SPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • High short circuit rating optimized for motor control, tsc =10µs @ VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high

tsc 429

Abstract: AN-994
Contextual Info: PD-95891A IRG4BH20K-SPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • High short circuit rating optimized for motor control, tsc =10µs @ VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high

Contextual Info: TK1Q90A MOSFETs Silicon N-Channel MOS π-MOS TK1Q90A 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 6.7 Ω (typ.) (2) High forward transfer admittance: |Yfs| = 1.0 S (typ.) (3) Low leakage current: IDSS = 100µA (max) (VDS = 720V)