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IXYS Corporation


IXYS Corporation IXGT32N90B2 IGBTs 32 Amps 900V 2.7 Rds
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Mouser Electronics	IXGT32N90B2					1 - 10 - 100 - 1000 - 10000 -	Get Quote
IXYS Corporation IXGT32N90B2D1 IGBTs 32 Amps 900V 2.7 Rds
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Mouser Electronics	IXGT32N90B2D1					1 - 10 - 100 - 1000 - 10000 -	Get Quote
IXYS Corporation IXGH32N90B2 IGBTs 32 Amps 900V 2.7 Rds
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Mouser Electronics	IXGH32N90B2					1 - 10 - 100 - 1000 - 10000 -	Get Quote
IXYS Corporation IXGR32N90B2D1 Transistor: IGBT; HiPerFAST™; 900V; 22A; 160W; PLUS247™
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TME	IXGR32N90B2D1				1	1 $12.68 10 $10.10 100 $9.08 1000 $9.08 10000 $9.08	Get Quote

32N90B2 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
32N90B2 Abstract: 32n90 Contextual Info: Advance Technical Information HiPerFASTTM IGBT IXGH 32N90B2 B2-Class High Speed IGBTs IXGT 32N90B2 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 900 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 900 V VGES Continuous ±20 V VGEM Transient ±30	Original	32n90b2 ic110 o-247 o-268 +132n90	PDF
32N90B2 Contextual Info: Advance Technical Information IXGH 32N90B2D1 IXGT 32N90B2D1 HiPerFASTTM IGBT with Fast Diode B2-Class High Speed IGBTs with Ultrafast Diode Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 900 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 900 V VGES	Original	32n90b2d1 ic110 o-247 32n90b2	PDF
Contextual Info: Advance Technical Information HiPerFASTTM IGBT with Fast Diode VCES IC25 VCE sat tfi typ IXGR 32N90B2D1 Electrically Isolated Base Symbol Test Conditions VCES TJ = 25OC to 150OC 900 V VCGR TJ = 25OC to 150OC; RGE = 1 MΩ 900 V VGES Continuous ±20 V VGEM	Original	32n90b2d1 150oc ic110 125oc +310parameters 30-12ar 0-12a	PDF
Contextual Info: Advance Technical Information HiPerFASTTM IGBT IXGH 32N90B2 B2-Class High Speed IGBTs IXGT 32N90B2 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 900 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 900 V VGES Continuous ±20 V VGEM Transient ±30	Original	32n90b2 ic110 o-247 o-268	PDF
SiS 961 Abstract: 32N90B 720V ISOPLUS247 125OC 32N90B2D1 IF110 32n90 IXGR32N90B2D1 32N9 Contextual Info: Advance Technical Information HiPerFASTTM IGBT with Fast Diode VCES IC25 VCE sat tfi typ IXGR 32N90B2D1 Electrically Isolated Base Symbol Test Conditions VCES TJ = 25OC to 150OC 900 V VCGR TJ = 25OC to 150OC; RGE = 1 MΩ 900 V VGES Continuous ±20 V VGEM	Original	32n90b2d1 150oc ic110 125oc +1030-12ar 0-12a sis 961 32n90b 720v isoplus247 if110 32n90 ixgr32n90b2d1 32n9	PDF
IXGH 32N90B2D1 Abstract: 32N90B2D1 IXGH32N90B2D1 IF110 720v 32N90B2 Contextual Info: Advance Technical Information IXGH 32N90B2D1 IXGT 32N90B2D1 HiPerFASTTM IGBT with Fast Diode B2-Class High Speed IGBTs with Ultrafast Diode Symbol Test Conditions Maximum Ratings VCES IC25 VCE sat tfi typ = 900 V = 64 A = 2.7 V = 150 ns TO-247 (IXGH) VCES	Original	32n90b2d1 o-247 ic110 ixgh 32n90b2d1 +4ixgh32n90b2d1 if110 720v 32n90b2	PDF
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	ms-013 10-pin 5m-1994 mo-229 +107n60b equivalent 18n50 equivalent ixgh 1499 mosfet smd 4407 ixdd 614 c 547 b w57 bjt transistor r1275ns20l r1271ns12c ixys cs 20-22 mof1 ixtp 220n04t2	PDF