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Infineon Technologies AG S29GL032N90FFI010 - Trays (Alt: S29GL032N90FFI010)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	S29GL032N90FFI010	Tray			900	1 - 10 - 100 - 1000 $19.28 10000 $17.39	Get Quote
Rochester Electronics	S29GL032N90FFI010		5		1	1 - 10 - 100 $2.19 1000 $1.96 10000 $1.85	Buy Now
Flip Electronics	S29GL032N90FFI010		7,091			1 $13.48 10 $13.48 100 $13.48 1000 $13.48 10000 $13.48	Get Quote
Infineon Technologies AG S29GL032N90FFI040 - Trays (Alt: S29GL032N90FFI040)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	S29GL032N90FFI040	Tray			900	1 - 10 - 100 - 1000 $5.43 10000 $4.90	Get Quote
Flip Electronics	S29GL032N90FFI040		900			1 $3.80 10 $3.80 100 $3.80 1000 $3.80 10000 $3.80	Get Quote
Amphenol Corporation MS17344R32N9S - Bulk (Alt: MS17344R32N9S)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	MS17344R32N9S	Bulk		24 Weeks	2	1 - 10 $832.64 100 $766.13 1000 $766.13 10000 $766.13	Buy Now
Amphenol Corporation JAND38999/32-N-9-R DUST CAP;D38999/32 - PLUG CAP;ELECTRODEPOSITED NICKEL - Bulk (Alt: D3899932N9R)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	JAND38999/32-N-9-R	Bulk		16 Weeks	100	1 - 10 - 100 $36.98 1000 $36.61 10000 $36.24	Buy Now
Pulse Electronics Corporation ASCQ000603032N9B00 - Tape and Reel (Alt: ASCQ000603032N9B00)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	ASCQ000603032N9B00	Tape & Reel		6 Weeks, 6 Days	120,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Newark	ASCQ000603032N9B00	Tape & Reel			90,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

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32N9 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
32N90B2 Abstract: 32n90 Contextual Info: Advance Technical Information HiPerFASTTM IGBT IXGH 32N90B2 B2-Class High Speed IGBTs IXGT 32N90B2 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 900 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 900 V VGES Continuous ±20 V VGEM Transient ±30	Original	32n90b2 ic110 o-247 o-268 +132n90	PDF
32N90B2 Contextual Info: Advance Technical Information IXGH 32N90B2D1 IXGT 32N90B2D1 HiPerFASTTM IGBT with Fast Diode B2-Class High Speed IGBTs with Ultrafast Diode Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 900 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 900 V VGES	Original	32n90b2d1 ic110 o-247 32n90b2	PDF
Contextual Info: Advance Technical Information HiPerFASTTM IGBT with Fast Diode VCES IC25 VCE sat tfi typ IXGR 32N90B2D1 Electrically Isolated Base Symbol Test Conditions VCES TJ = 25OC to 150OC 900 V VCGR TJ = 25OC to 150OC; RGE = 1 MΩ 900 V VGES Continuous ±20 V VGEM	Original	32n90b2d1 150oc ic110 125oc +310parameters 30-12ar 0-12a	PDF
Contextual Info: Advance Technical Information HiPerFASTTM IGBT IXGH 32N90B2 B2-Class High Speed IGBTs IXGT 32N90B2 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 900 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 900 V VGES Continuous ±20 V VGEM Transient ±30	Original	32n90b2 ic110 o-247 o-268	PDF
SiS 961 Abstract: 32N90B 720V ISOPLUS247 125OC 32N90B2D1 IF110 32n90 IXGR32N90B2D1 32N9 Contextual Info: Advance Technical Information HiPerFASTTM IGBT with Fast Diode VCES IC25 VCE sat tfi typ IXGR 32N90B2D1 Electrically Isolated Base Symbol Test Conditions VCES TJ = 25OC to 150OC 900 V VCGR TJ = 25OC to 150OC; RGE = 1 MΩ 900 V VGES Continuous ±20 V VGEM	Original	32n90b2d1 150oc ic110 125oc +1030-12ar 0-12a sis 961 32n90b 720v isoplus247 if110 32n90 ixgr32n90b2d1 32n9	PDF
IXGH 32N90B2D1 Abstract: 32N90B2D1 IXGH32N90B2D1 IF110 720v 32N90B2 Contextual Info: Advance Technical Information IXGH 32N90B2D1 IXGT 32N90B2D1 HiPerFASTTM IGBT with Fast Diode B2-Class High Speed IGBTs with Ultrafast Diode Symbol Test Conditions Maximum Ratings VCES IC25 VCE sat tfi typ = 900 V = 64 A = 2.7 V = 150 ns TO-247 (IXGH) VCES	Original	32n90b2d1 o-247 ic110 ixgh 32n90b2d1 +4ixgh32n90b2d1 if110 720v 32n90b2	PDF
32N50 Contextual Info: HiPerFAST IGBT with Diode IXGH 32N50BU1 IXGH 32N50BU1S v CES ^C25 v CE sat «1, Symbol Test Conditions Maximum Ratings V ces Tj = 25CC to 150CC 500 v CGR T j = 25°C to 150“ C; RGE = 1 M£2 500 V v GES Continuous ±20 V v¥gem Transient ±30 V ^C25 T0 = 25°C	OCR Scan	32n50bu1 32n50bu1s o-247 32n90bu1 +332ns0bu1s b2-22 32n50	PDF
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	ms-013 10-pin 5m-1994 mo-229 +107n60b equivalent 18n50 equivalent ixgh 1499 mosfet smd 4407 ixdd 614 c 547 b w57 bjt transistor r1275ns20l r1271ns12c ixys cs 20-22 mof1 ixtp 220n04t2	PDF