32KX8 SRAM Search Results

Contextual Info: Static SRAM RAM Random Access Memory LH52256C-10LL 256K 32Kx8 (100 ns) (DIP)

Contextual Info: Static SRAM RAM Random Access Memory LH52256CH-85LL 256K 32Kx8 (85 ns) (DIP)

Contextual Info: EDI8832C E lectronic Declgn« In c.« High Performance 256K Monolithic SRAM 32Kx8 Static RAM CMOS, Monolithic Features 1.2. 1. 32Kx8 bit CMOS Static Random Access Memory • Access Times 70,85,100,120 and 150ns • Data Retention Function EDI8832LP only

AS7C256

Contextual Info: II 81 High Performance 32Kx8 CMOS SRAM AS7C256 AS7C256L 32Kx8 CMOS SRAM Common HO \ F E A T U R E S _ • Organization: 32,768 words x 8 bits • Completely static memory. No clocks or timing strobe required. • Equal access and cycle times

Contextual Info: ^EDI EDI8F1664C ELECTRONIC D ESIGN S INC. Commercial Megabit SRAM Module 64Kx16 Static RAM CMOS, Module Features The EDI8F1664C is a high speed 64Kx16 CMOS Static RAM Module consisting of four 4 32Kx8 CMOS Static RAMs. The 32Kx8 RAMs are organized as two banks of

Contextual Info: STATIC SRAM RAM Random Access Memory LH52256CT-10LL 256K 32Kx8 (100 ns) (TSOP)

Contextual Info: KM62256C Family CMOS SRAM 32Kx8 bit Low Power CMOS Static RAM FEATURES GENERAL DESCRIPTION -• Process Technology : 0.7* • CMOS ■■ Organization : 32Kx8 Power Supply Voltage : Single 5V • • 10% ■■ Low Data Retention Voltage : 2V Min •• Three state output and TTL Compatible

CYC199

Abstract: sram cross reference CYPRESS SAMSUNG CROSS REFERENCE W24257AK Cypress CROSS 9042 issi w2425 IS1C64AH idt cross reference
Contextual Info: High Speed SRAM Cross Reference Guide Part No. Density bits Org. Voltage Access Pins Time (ns) (bits) Package W2465AJ 64K 8Kx8 5V 12 28 J:SOJ W24129AJ W24L257AJ,Q 128K 256K 16Kx8 32Kx8 5V 3.3V 12 12, 15 28 28 J:SOJ J:SOJ/Q:STSOP W24257AK,J,Q,S 256K 32Kx8

Contextual Info: High Performance 32Kx8 CMOS SRAM p i AS7C256 AS7C256L 32Kx8 CMOS SRAM Common I/O FEATURES • Organization: 32,768 words x 8 bits Equal access and cycle times • High speed Easy memory expansion with CE and OE inputs - 10/12/15/20/25/35 ns address access time

AS7C256

Abstract: 256x128x8 TI 344C
Contextual Info: High Performance 32Kx8 CMOS SRAM II ^ L lh . AS7C256 AS7C256L 32Kx8 CMOS SRAM Common I/O FEATURES • Organization: 32,768 words x 8 bits • Equal access and cycle times • High speed • Easy memory expansion with CE and OE inputs - 10/12/15/20/25/35 ns address access time

32Kx16

Abstract: Intel EEPROM 32kx8
Contextual Info: Alliance Semiconductor Memories SRAM 64K - 3 . 3 Volt All densities in bits 512K 1M 256K 32Kx8 A sy n ch ro no u s/ burst •5 Volt X 8Kx8 X 64KX8 1 32KX16 128KX8 X 32KX8 64KX8 X 32Kx9 i 32KX16 2M 4M 64KX32 512KX8 64KX16 X 32KX32 256KX16 X 128Kx8 X 256KX4

Contextual Info: High Performance 32Kx8 CMOS SRAM II AS7C 256 A S7C256L 32Kx8 CMOS SRAM Common I/O FEATU RES • Organization: 32,768 words x 8 bits • TTL compatible I/O • High Speed: 15/20/25/35 ns Address access time 4/5/G/8 ns Output Enable access time • Completely static memory - No clocks or timing

32kx8 sram

Contextual Info: High Performance 32KX8 3.3V CMOS SRAM « II AS7C32S6 AS7C3256L « Low voltage 32Kx8 CMOS SRAM Features • O rganization: 3 2 ,7 6 8 w o rd s x 8 bits • Equal access and cycle tim es • Single 3 .3 ± 0.3V p o w e r su pp ly • Easy m em o ry ex p a n sio n w ith CE and OE in pu ts

LH52256CH-85LL

Abstract: LH525CL2 32KX8
Contextual Info: PRODUCT SPECIFICATIONS Integrated Circuits Group LH52256CH-85LL 256K SRAM Model No.: LH525CL2 Spec No.: EL095124 Issue Date: June 3, 1997 Static SRAM RAM Random Access Memory LH52256CH-85LL 256K (32Kx8) (85 ns) (DIP)

CS16LV40963

Abstract: BS62LV4006 sram cross reference CS18LV40963 LY6264 Hynix Cross Reference cs18lv10245 cs18lv02560 LY621024 K6X1008C2D
Contextual Info: www.ashlea.co.uk 01793 783784 Low power SRAM Cross Reference Density Configuration 64K 8Kx8 256K 32Kx8 Lyontek LY6264 LY62L64 LY62256 LY62L256 LY62256 2.7-5.5 1M 128Kx8 64Kx16 LY621024 LY62L1024 LY62L6416 Samsung K6X0808C1D K6X0808T1D K6X1008C2D K6X1008T2D

LH52256CT-10LL

Abstract: static ram 32kx8
Contextual Info: PRODUCT SPECIFICATIONS Integrated Circuits Group LH52256CT-10LL 256K SRAM Model No.: LH525C9T Spec No.: EL086125 Issue Date: June 19, 1996 STATIC SRAM RAM Random Access Memory LH52256CT-10LL 256K (32Kx8) (100 ns) (TSOP)

LH52256C-10LL

Abstract: LH525CL9 256k sram
Contextual Info: PRODUCT SPECIFICATIONS Integrated Circuits Group LH52256C-10LL 256K SRAM Model No.: LH525CL9 Spec No.: EL095120 Issue Date: June 2, 1997 Static SRAM RAM Random Access Memory LH52256C-10LL 256K (32Kx8) (100 ns) (DIP)

Contextual Info: KM62V256C, KM62U256C Family CMOS SRAM 32Kx8 bit Low Power & Low Vec CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology: 0.7 uM CMOS • Organization: 32K x 8 • Power Supply Voltage KM82V256C family: 3.3V +/- 0.3V KM62U256C family: 3.0V +/- 0.3V

K6E0808C1E

Abstract: EP32K
Contextual Info: K6E0808C1E-C/E-L, K6E0808C1E-I/E-P For Cisco CMOS SRAM Document Title 32Kx8 Bit High-Speed CMOS Static RAM 5V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev .No. History Rev. 0.0 Initial release with Preliminary.

Contextual Info: bq4011/bq4011Y BENCHMARQ 32Kx8 Nonvolatile SRAM Features General Description >• Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy

Contextual Info: bq4832Y RTC Module With 32Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, CPU supervisor, crystal, power-fail circuit, and battery The bq4832Y RTC Module is a nonvolatile 262,144-bit SRAM organized as 32,768 words by 8 bits with

Z7777

Contextual Info: bq4011/bq4011Y UNITRODE- 32Kx8 Nonvolatile SRAM Features General Description >• Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy

TSOP 86 Package

Abstract: KM62256C KM62256CL KM62256CLE KM62256CLI KM62256CLI-L KM62256CL-L ci 45116
Contextual Info: KM62256C Family CMOS SRAM 32Kx8 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • • • • • • The KM62256C family is fabricated by SAMSUNG'S advanced CMOS process technology. The family can support various operating temperature ranges

Contextual Info: bq4832Y RTC Module With 32Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, CPU supervisor, crystal, power-fail circuit, and battery The bq4832Y RTC Module is a nonvolatile 262,144-bit SRAM organized as 32,768 words by 8 bits with