31AUG05 Search Results

Contextual Info: GP15A thru GP15M Vishay General Semiconductor Glass Passivated Junction Rectifier Major Ratings and Characteristics IF AV 1.5 A VRRM 50 V to 1000 V IFSM 50 A IR 5.0 µA VF 1.1 V Tj max. 175 °C d* e t n Pate DO-204AC (DO-15) * Glass-plastic encapsulation

SI4435DY

Abstract: AN609 74549N
Contextual Info: Si4435DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

GP15D

Abstract: GP15A GP15K
Contextual Info: GP15A thru GP15M Vishay General Semiconductor Glass Passivated Junction Rectifier Major Ratings and Characteristics IF AV 1.5 A VRRM 50 V to 1000 V IFSM 50 A IR 5.0 µA VF 1.1 V Tj max. 175 °C d* e t n Pate DO-204AC (DO-15) * Glass-plastic encapsulation

Contextual Info: LH1523BB/ BAC/ BACTR Vishay Semiconductors Dual 1 Form B Solid State Relay SMD DIP Features • • • • • • • • • • • Dual Channel LH1511 Isolation Test Voltage 3750 VRMS Typical RON 10 Ω e3 Load Voltage 200 V Load Current 200 mA High Surge Capability

LH1512B

Contextual Info: LH1512BAC/ BACTR/ BB Vishay Semiconductors Dual 1 Form A/B, C Solid State Relay DIP SMD Features • • • • • • • • • • Current Limit Protection Isolation Test Voltage 3750 VRMS Typical RON 10 Ω Load Voltage 200 V Load Current 200 mA High Surge Capability

931AM

Contextual Info: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 6 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC DIST AD 00 ALL RIGHTS RESERVED. REVISIONS LTR DESCRIPTION 0 RELEASE 01 REVISED HO U S IN G MATERIAL: T H E R M O P L A S T IC . DATE PE REC 0S12 - 0 0 3 4 - 0 5

Contextual Info: 7 T H IS D R A W IN G IS U N P U B L IS H E D . R ELEASED A LL C O P Y R IG H T - B Y TYCO E LE C TR O N IC S FO R 6 5 4 3 2 P U B L IC A T IO N R IG H T S LOC RESERVED. D IS T AD C O R P O R A TIO N . 2.54 [. 1 O O ] DI A 2 HOUSING MATERIAL: THERMOPLASTIC.

Contextual Info: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 6 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. AD REVISIONS D IS T 00 LTR B CONTAC CONNECTOR ASS XAMPLARY LOADED MENSION DESCRIPTION DATE REVISED PER ECN 0 5 1 2 - 0 3 0 4 - 0 5

Contextual Info: LH1512BAC/ BACTR/ BB Vishay Semiconductors Dual 1 Form A/B, C Solid State Relay DIP SMD Features • • • • • • • • • • Current Limit Protection Isolation Test Voltage 3750 VRMS Typical RON 10 Ω Load Voltage 200 V Load Current 200 mA High Surge Capability

yoke coil diagram

Abstract: SDT-S-112LMR OEG SDT-S-109LMR relay 10A 250V tyco diagram 94v-0 SDT-S-105LMR SDT-S-109LMR 1461102-5 relay 12v 100A SDT-S-103LMR
Contextual Info: D PARTA 1 2 3 4 L0C HB THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. D COPYRIGHT DIST P PARTB T v ~5 cOY H! u S 5A 250V ~ L m / m 250VT 3A/100A 2 5 0 V - A EC0-08-007869 CHANGE DATE CODE&TE LOGO

Contextual Info: LH1501BAB/ BABTR/ BT Vishay Semiconductors 1 Form B Solid State Relay DIP SMD Features • • • • • • • • Isolation Test Voltage 3750 VRMS Typical RON 20 Ω Load Voltage 350 V e3 Clean Bounce Free Switching Low Power Consumption SMD Lead Available on Tape and Reel

M11 marking

Abstract: vishay resistor 220k 562R M100402 VISHAY marking m11 M110603 marking m25 M1106 M-1106 M1140
Contextual Info: M10, M11, M12, M25 Vishay Draloric Thin Film, Rectangular, Resistor Chips FEATURES • Metal film layer on high quality ceramic • Protective top coat • Pure tin on nickel barrier layer • Excellent stability at different environmental conditions • Low TC and tight tolerances

74093

Abstract: 7916 AN609 Si4427BDY
Contextual Info: Si4427BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

SFERNICE potentiometer

Abstract: sfernice Potentiometer vishay potentiometer Sfernice cm potentiometer 222mm
Contextual Info: MODEL 18 Vishay Sfernice Model 18 PR2 22.2 mm Diameter, 15 Turn Dial FEATURES • No backlash • Compact-requires minimal panel space (22,2 mm diameter requirement) • For use with precision potentiometers or other rotating devices, up to 15 turns • Designed for metal shaft

LH1511B

Contextual Info: LH1511BAB/ BABTR/ BT Vishay Semiconductors 1 Form B Solid State Relay DIP SMD Features • • • • • • • • Isolation Test Voltage 3750 VRMS Typical RON 10 Ω Load Voltage 200 V e3 Clean Bounce Free Switching Low Power Consumption SMD Lead Available on Tape and Reel

Contextual Info: LH1502BAC/ BACTR/ BB Vishay Semiconductors Dual 1 Form A/B, C Solid State Relay DIP SMD Features • • • • • • • • • • • Current Limit Protection Isolation Test Voltage 3750 VRMS Typical RON 20 Ω e3 Load Voltage 350 V Load Current 150 mA

BF998B

Abstract: BF998 VISHAY bf998 BF998A-GS08 BF998A BF998R BF998RA BF998RAW BF998RB BF998RW
Contextual Info: BF998 / BF998R / BF998RW Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • • • • SOT-143 Integrated gate protection diodes Low noise figure e3 Low feedback capacitance High cross modulation performance

84 jrc regulator

Abstract: 7FSCR1 7FSCR1R4 7fscr1e4m1 7fscr1e4 level shifter 5V to 3.3V IEC7816-3 A52101 marking wt6 WT7 MARKING
Contextual Info: ST7SCR 8-BIT LOW-POWER, FULL-SPEED USB MCU WITH 16K FLASH, 768 RAM, SMARTCARD I/F, TIMER • ■ ■ ■ ■ Memories – Up to 16K of ROM or High Density Flash HDFlash program memory with read/write protection, HDFlash In-Circuit and In-Application Programming. 100 write/erase cycles guaranteed, data retention: 40 years at 55°C

m 6125

Abstract: AN609 Si4435BDY
Contextual Info: Si4435BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

7916

Abstract: AN609 Si4425BDY
Contextual Info: Si4425BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

74094

Abstract: a 6151 A 7710 AN609 Si4430BDY
Contextual Info: Si4430BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

SFERNICE potentiometer

Abstract: pliers potentiometer Sfernice 6 pin potentiometer
Contextual Info: MODEL 25 Vishay Sfernice MODEL 25 PR1 46 mm Diameter, 20 Turn Dial FEATURES • Large package size • For use with precision poteniometers or other devices, up to 20 turns • Excellent readability • Precision feel - no backlash • Cast housing MECHANICAL SPECIFICATIONS

Contextual Info: BYD33DGP thru BYD33MGP New Product Vishay General Semiconductor Avalanche Glass Passivated Junction Fast Switching Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 200 V to 1000 V IFSM 30 A ERSM 10 mJ, 7 mJ trr 150 ns, 250 ns, 300 ns IR 5.0 µA

Contextual Info: BYD13DGP thru BYD13MGP New Product Vishay General Semiconductor Avalanche Glass Passivated Junction Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 200 V to 1000 V IFSM 30 A ERSM 7 mJ VF 1.1 V, 1.2 V IR 5.0 µA Tj max. 175 °C ed* t n e Pat