10JUN05 Search Results
10JUN05 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. LOC DIST CM 54 REVISIONS LTR T DESCRIPTION DATE EC 0G3B 1042 04 DWN APVD BSV DB 10JUN05 D 1.1 9 ±0.15 a A 9 5 .1 0 9 1 .1 4 8 7 .1 7 |
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10jun051zfeb9119feb91mta-156+1 | |
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Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION A LL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. LOC DIST CM 54 REVISIONS LTR T DESCRIPTION EC 0G3B DWN DATE 1042 04 APVD BSV DB 10JUN05 A D D V. S "N i S 95.10 91.14 87.17 83.21 79.25 |
OCR Scan |
10jun051zfeb9119feb9131mar2000 | |
6406Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. LOC DIST CM 54 REVISIONS LTR DESCRIPTION DATE EC 0G3B 1042 04 DWN APVD BSV DB 10JUN05 D D 9 5 .10 [3.744] 24 5-640604-4 91 .14 [3.588] |
OCR Scan |
10jun051zfeb9119feb91mta-156+2 | |
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Contextual Info: SiE822DF Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling |
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sie822df2002/95/ec2011/65/eu12-mar-12 | |
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Contextual Info: SiE830DF Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd WFET Technology for Low Switching Losses • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling |
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sie830df2002/95/ec2011/65/eu12-mar-12 | |
kvp 61
Abstract: kvp 03
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18-jul-08kvp 61kvp 03 | |
l 0706
Abstract: gdmq0806
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18-jul-08l 0706gdmq0806 | |
F200Contextual Info: 6 7 T H IS D R A W IN G IS U N P U B L IS H E D . R ELEASED A LL C O P Y R IG H T - B Y TYCO E LE C TR O N IC S FO R 5 4 2 3 P U B L IC A T IO N R IG H T S LOC C O R P O R A TIO N . 2.54 [. 1 O O ] R E V I S I ON S DI A 3 RELEASE PER EC 0 S 1 2 - 0 0 3 4 - 0 5 |
OCR Scan |
0s12-0034-05ec0-09-02460610jun0502nov09+4 | |
931AMContextual Info: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 6 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC DIST AD 00 ALL RIGHTS RESERVED. REVISIONS LTR DESCRIPTION 0 RELEASE 01 REVISED HO U S IN G MATERIAL: T H E R M O P L A S T IC . DATE PE REC 0S12 - 0 0 3 4 - 0 5 |
OCR Scan |
0s12-0034-05ec0-09-02460610jun0502nov09+4 | |
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Contextual Info: 7 T H IS D R A W IN G IS U N P U B L IS H E D . R ELEASED A LL C O P Y R IG H T - B Y TYCO E LE C TR O N IC S FO R 6 5 4 3 2 P U B L IC A T IO N R IG H T S LOC RESERVED. D IS T AD C O R P O R A TIO N . 2.54 [. 1 O O ] DI A 2 HOUSING MATERIAL: THERMOPLASTIC. |
OCR Scan |
0s12-0034-0510jun0502nov0931mar2000+3 | |
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Contextual Info: SiE820DF Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd WFET Technology for Low Switching Losses • TrenchFET Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for Double-Sided Cooling |
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sie820df2002/95/ec2011/65/eu12-mar-12 | |
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Contextual Info: SiE800DF Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd WFET Technology for Low Switching Losses • TrenchFET Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for Double-Sided Cooling |
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sie800df2002/95/ec11-mar-11 | |
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Contextual Info: SiE800DF Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd for Low Switching Losses • TrenchFET Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for Double-Sided |
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sie800df2002/95/ec11-mar-11 | |
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Contextual Info: SiE832DF Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling |
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sie832df2002/95/ec2011/65/eu12-mar-12 | |
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Contextual Info: GFMQ, GFWQ Vishay Draloric Ceramic Capacitor Stacks Ceramic capacitor stacks with solder tags L RATED VOLTAGE UR: see table below 18 øD 1.5 0.059 3.2 (0.126) DESIGN: MODEL GFMQ DIELECTRIC STRENGTH: 0.3 (0.012) ~2 (0.079) see table below (Test voltage between solder tags) |
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11-mar-11 | |
ok ps
Abstract: pq41 EN61000-3-3 EN61000-4-2 EN61000-4-3 EN61000-4-4 EN61000-4-5
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jps350en61000-3-2vac/60hz10-jun-05+7 | |
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Contextual Info: SiE822DF Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling |
Original |
sie822df2002/95/ec2011/65/eu12-mar-12 | |
7445-1Contextual Info: SiE822DF Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling |
Original |
sie822df2002/95/ec2011/65/eujs709a+2 | |
WX26 cable
Abstract: marking code H5C SMD Transistor xo-54be max 083 Crystal Oscillator, Leaded, Radial, 16.000 MHz smd transistor h5c XO-54B p l e sq3300 mto13fad XO-52BE
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vse-db0020-0507wx26 cablemarking code h5c smd transistorxo-54be+7 | |
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Contextual Info: 6 7 T H IS D R A W IN G IS U N P U B L IS H E D . R ELEASED A LL C O P Y R IG H T - B Y TYCO E LE C TR O N IC S FO R 5 3 4 2 P U B L IC A T IO N R IG H T S LOC RESERVED. D IS T 25 AD C O R P O R A TIO N . R E V I S I ON S LTR 01 DI A 2 HOUSING MATERIAL: THERMOPLASTIC. |
OCR Scan |
0s12-0034-0510jun0519jan31mar2000+3 | |
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Contextual Info: GFMQ, GFWQ Vishay Draloric Ceramic Capacitor Stacks Ceramic capacitor stacks with solder tags L RATED VOLTAGE UR: see table below 18 øD 1.5 0.059 3.2 (0.126) DESIGN: MODEL GFMQ DIELECTRIC STRENGTH: 0.3 (0.012) ~2 (0.079) see table below (Test voltage between solder tags) |
Original |
2011/65/eu2002/95/ec12-mar-12 | |
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Contextual Info: GFMQ, GFWQ Vishay Draloric Ceramic Capacitor Stacks Ceramic capacitor stacks with solder tags L RATED VOLTAGE UR: see table below 18 øD 1.5 0.059 3.2 (0.126) DESIGN: MODEL GFMQ DIELECTRIC STRENGTH: 0.3 (0.012) ~2 (0.079) see table below (Test voltage between solder tags) |
Original |
2002/95/ec2011/65/eujs709a02-oct-12 | |
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Contextual Info: SiE832DF Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling |
Original |
sie832df2002/95/ec2011/65/eujs709a+1 | |
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Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. F -F COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 4 2 3 - ALL RIGHTS RESERVED. LOC DIST AD 25 R E V IS IO N S P LTR RELEASE DI A 3 DESCRIPTION HOUSING MATERIAL: THERMOPLASTIC. CONTACT MATERIAL: COPPER |
OCR Scan |
10jun0531mar2000 | |