F200 Search Results

Normally Closed Tact Switch

Abstract: TL3310AF200QG 3310 612TL
Contextual Info: TACT SWITCHES SERIES TL 3310 SWITCHES TACT SWITCHES SMT - NORMALLY CLOSED PUSHBUTTON SWITCHES NAVIGATION SWITCHES SPECIFICATIONS Contact Rating: 50mA @ 50 VDC Life Expectancy: 100,000 cycles-F100 50,000 cycles-F200 Contact Resistance: 100mΩ max., typical @ 2-4 VDC

F2000ERW

Abstract: 217F f2001e
Contextual Info: F2000ERW Series Low Cost, Compact 20W, 2:1 Input Range DC/DC Converters Electrical Specifications Specifications typical @ +25°C, nominal input voltage & rated output current, unless otherwise noted. Specifications subject to change without notice. Key Features:

Contextual Info: Introducción MODELO PG-F200X Instalación Conexiones MANUAL DE MANEJO Inicio rápido PROYECTOR DE DATOS Manejó básico Funciones útiles Apéndice IMPORTANTE • Para que le sirva de ayuda al notificar la pérdida o el robo de su proyector, anote el número de modelo y serie que se

Contextual Info: PG-F200X PG-F200X 1/4 6 Dimensions Top True XGA Data Projector Back M4 2 5/8 1 31/64 (66.35) (37.65) 3 33/64 (89) Front 13/32 (30) (49) M4 (10) 1 3/16 M4 13/32 1 15/16 4 7/64 (104) 10 7/16 (265) M4 (10) 2 61/64 (75) 1 27/64 (36) 2 61/64 (75) 2 3/8 (60) Units: inches (mm)

S609

Abstract: L120TWB2 PC110 led 3mm rt s467 2SB200 L120CWB2
Contextual Info: LEDTRONICS 27E D • 5423705 □ D Q a 3 c13 ? ■ T - CH ' c 3 . 5 ' FEATURES: BLUE BASED LED’s/DIRECT INCANDESCENT REPLACEMENT F200 MODEL NUMBER T1 F120 SUB. MID. FLANGE BP120 (BI-PIN) T1-3/4 F200 (MID. FLANGE) G200 (MID. GROOVE) S200 (MID. SCREW) W200 (MID. WEDGE)

Contextual Info: polyfet rf devices F2004 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

tact switch 5mm

Abstract: TACT SWITCH datasheet TACT SWITCH F120 F200
Contextual Info: TACT SWITCHES SERIES TL 3310 SWITCHES TACT SWITCHES SMT - NORMALLY CLOSED PUSHBUTTON SWITCHES NAVIGATION SWITCHES SPECIFICATIONS Contact Rating: 50mA @ 50 VDC Life Expectancy: 100,000 cycles-F100 50,000 cycles-F200 Contact Resistance: 100mΩ max., typical @ 2-4 VDC

F2003

Abstract: F20-03 idq04
Contextual Info: polyfet rf devices F2003 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

ec1010

Contextual Info: I"HM T ¡iS \ H E W L E T T P A C K A R D HP 53100-Series Counters High-performance, low-cost . 225mh,bandwidth counters simplify and speed systems . and bench frequency measurements • IIP-IB lsgateH me interface standard • Data transfer rate o f200 folly

T28F200

Contextual Info: ADVANCE MICRON I ,*— , M T2 8 F200 1 2 8 K x 16. 2 5 6 K x 8 FLASH M E M O R Y Trr, T FLASH MEMORY 128K X 16,256K X 8 5V/12V, BOOT BLOCK FEATURES • Five erase blocks: - 16KB/ 8K-word boot block protected - Two 8KB/4K-word parameter blocks - One 96KB/48K-word memory block

206H

Abstract: xf20064cs1
Contextual Info: 1. D im e n s i o n s : 2. S c h e m a t i c : 1CT:1 CT A 1.000 Max 2 5 .4 0 Max m ^O O m -H . X o o XFMRS YYWW X F20064C S1 CD r-o d UL 0 .018 : cn 05 00 ro o -H 3&4 •> 5 oSeven Pole Transm it Butterworth Filter 1CT:1 CT o r^ O csi in E Û .46 h -0 .1 0 0

Contextual Info: 소 개 데이터 프로젝터 모델 PG-F200X 퀵 가 이 드 설 치 사용설명서 연 결 기 본 조 작 유 용 한 기 능 부 록 중요 • 사용자의 프로젝터를 분실 또는 도난 당 했을 경우를 위해 프로젝터의 하부에 기

Contextual Info: Einführung MODELL PG-F200X Einstellung Verbindungen BEDIENUNGSANLEITUNG Kurzanleitung DATENPROJEKTOR Grundlegende Bedienung Nützliche Funktionen Anhang WICHTIG • Um bei Verlust oder Diebstahl dieses Projektors eine Meldung zu vereinfachen, sollten Sie die auf der Unterseite des

Contextual Info: PG-F200X PG-F200X 1/4 6 Dimensions Top True XGA Data Projector Back M4 2 5/8 1 31/64 (66.35) (37.65) 3 33/64 (89) Front 13/32 (30) (49) M4 (10) 1 3/16 M4 13/32 1 15/16 4 7/64 (104) 10 7/16 (265) M4 (10) 2 61/64 (75) 1 27/64 (36) 2 61/64 (75) 2 3/8 (60) Units: inches (mm)

Contextual Info: F2000ERW Series Low Cost, Compact 20W, 2:1 Input Range DC/DC Converters Electrical Specifications Specifications typical @ +25°C, nominal input voltage & rated output current, unless otherwise noted. Specifications subject to change without notice. Key Features:

Contextual Info: F2000RU Series Ultra-Wide Input 20W Single & Dual Output DC/DC Converters Electrical Specifications Specifications typical @ +25°C, nominal input voltage & rated output current, unless otherwise noted. Specifications subject to change without notice. Input

M 015 j47

Abstract: Diode FAJ 32
Contextual Info: MOTOROLA Order this document by F20060R/D SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line RF Pow er Bipolar Transistors M R F20060R M F20060RS The M R F 20 06 0R and M R F 20 06 0R S are desig ned fo r b roadband com m e rcial and industrial ap plicatio ns at fre q u e n cie s from 1800 to 2 0 00 M Hz. T he high gain,

Contextual Info: polyfet rf devices F2001 PATENTED GOLD METALIZED General Description Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"tm process features gold metal for greatly extended lifetime. Low output capacitance

Contextual Info: polyfet rf devices F2001 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

TCXO-F200

Abstract: F221 kvg TCXO F202 F211 F221 F222
Contextual Info: ROHS-Compliant Product TCXO-F200 Series 1. Specification Type: F201 F221 F211 F202 F222 F212 Frequency range: 5 . 35 MHz 3 kHz- 5 . 35 MHz 35MHz Frequency stability vs. temp. - 20°C . + 70°C: < + 1 ppm Frequency stability vs. supply changes UB ± 5 %:

SDF2000H

Abstract: SANSHA SDF2000H100 SDF2000H120 SDF2000H80
Contextual Info: SANSHA E L E C T R I C MFG CO sbE » • T w an a ban dgdomss m s e h j DISC TYPE DIODE F2000H r - 'ù j- z z SD F2000H is a Flat Pack Diode designed for high power rectifi­ cation. • If av = 2000A, VRRM= 1200V • High Reliability by pressure mount construction.

Contextual Info: F200150 R DACO SEMICONDUCTOR CO., LTD. TH RU MBR F200200(R) SCHOTTKY DIODE MODULE TYPES 200A Features High Surge Capability 200 Amp Rectifier 150-200 Volts Types Up to 200V VRRM FULL PACKAGE Maximum Ratings Operating Temperature: -55 C to +150 Storage Temperature: -55 C to +150

transistor BC148

Abstract: BC147 BC148 BC108* BC109* BC110* TRANSISTORS sim 300 w BC149 BC148 transistor BC158 AF379 BC157
Contextual Info: Inventory o f discrete standard Types 9.1. Transistors Type P = P N P (N = N P N ) C o lle c t o r base re v e rse v o lt a g e V<:b o ; V ( ' ' c e s ): V A F200U P -2 5 AF 201 U AF 202 P P -2 5 -2 5 A F 20 2S P -3 2 AF 239 P A F 23 9S A F 240 AF 279 C o lle c t o r

diode f400

Abstract: F400-48S5 F200-48S12 F200-48S5 H400 IEC61204-3 Intronic
Contextual Info: Intronics, Inc. F200/400 FAMILY HIGH DENSITY DC/DC CONVERTERS F Series 200/400W Full Bricks Description The F series of high current DC/DC converters offer current levels that are comparable to existing full-bricks. With a wide input voltage range of 36-75V or 18~36V, they