F222 Search Results

F2222

Contextual Info: SMT Power Inductor EPI F2222 Series ELECTRONICS INC. Features of the EPI “F2222” Series • Used in PDA’s Flash Memory, Digital Cameras, Communications Equipment • Low loss material ensures operation in high frequency switching converters, such as Buck, Boost or as output averaging filter inductor

F2220

Contextual Info: Miniature SMT Power Inductor ELECTRONICS INC. EPI F2220 Series V Features of the EPI “F2220” Series of Miniature SMT Power Inductors µSec. • Virtually no limit on V µSec as long as max. RMS Current Limit • and Temperature Rise Limit are not exceeded

TCXO-F200

Abstract: F221 kvg TCXO F202 F211 F221 F222
Contextual Info: ROHS-Compliant Product TCXO-F200 Series 1. Specification Type: F201 F221 F211 F202 F222 F212 Frequency range: 5 . 35 MHz 3 kHz- 5 . 35 MHz 35MHz Frequency stability vs. temp. - 20°C . + 70°C: < + 1 ppm Frequency stability vs. supply changes UB ± 5 %:

pin diagram of ic 1163

Abstract: CD022
Contextual Info: F2224 • F2212 2400/1200/600/300 bps Full Duplex Modem FA IR C HILD A Schlum berger Com p any Advance Information, June 1986 Advanced Signa! Processing Division Description Connection Diagram 28-Lead DIP Top View The F2224 and F2212 are single-chip full-duplex modem

F2222

Contextual Info: Surface Mount Power Inductor EPI F2222 Series ELECTRONICS INC. Features of the EPI “F2222” Series • Used in PDA’s Flash Memory, Digital Cameras, Communications Equipment • Low loss material ensures operation in high frequency switching converters, such as Buck, Boost or as output averaging filter inductor

IRF22

Abstract: R/Detector/"detect18 ic"/"CD"/F223
Contextual Info: IR F220, IR F 22 1 IR F222, IRF22 3 2 HARRIS N -Channel Enhancem ent-M ode Power Field-Effect Transistors August 1991 Features Package TO -20 4 A A BOTTOM VIEW • 4.0A and 5.0A, 150V - 200V • rDS(on = 0 .8 0 and 1 .2 fi • SOA is Power-Dissipation Limited

Q62902-B141-F222

Abstract: Q62902B141F222 Q62902 Q62902-B141 62902-B15 62902-B156-F222
Contextual Info: SIEMENS Mounting Clip & Collar for T13/« 8 mm LED Q 62901-B64, Clear and Q 62901-B65, Black Mounting Clip & Collar for T1 (3 mm) LED Q 62901-B61, Clear and Q 62901-B62, Black LED l a m p a c c e s s o r ie s Right Angie Mount Angular Mount Q 62902-B156-F222, Black

circuit diagram of calling bell

Abstract: calling bell Bell-202 DTMF RS232 schlumberger F2212 F2212DC F2212PC F2212QC F2224DC
Contextual Info: FAIRCHILD A Schlum berger C om pany F2224 • F2212 2 4 0 0 /1 2 0 0 /6 0 0 /3 0 0 bps Full Duplex Modem A d va n ce In fo rm a tio n , J u n e 1986 Advanced Signal Processing Division Description Connection Diagram 28-Lead DIP Top View The F2224 and F2212 are single-chip full-duplex modem

TPS6200x

Contextual Info: Surface Mount Power Inductor ELECTRONICS INC. EPI F2222 Series • Used in PDA’s, Cell Phones, Digital Cameras, MP3 Players, Low Power CPU & DSP Supply and Organizers • Used as an Inductor in TI TPS6205X, TPS6110X, TPS6200X, TSP6210X and TPS6220X Series Applications

SEM 2006

Abstract: F2223-21SH SUS304 TMCPF0020 beam mcp
Contextual Info: MCP ASSEMBLY F2223-21SH This MCP assembly is a suitable detector for an electron or ion beam in SEM, SIM or Lithography. It is possible to detect some signal from a sample with high sensitivity, that can be performed with the compactness and the center hole

Contextual Info: MCP MCP ASSEMBLY F2223-21SH FEATURES ●High sensitivity ●High S/N ratio ●Wide dynamic range ●Center hole for beam line ●Compact and lightweight OVERVIEW APPLICATIONS This MCP assembly is a suitable detector for an electron or ion beam in SEM, SIM or Lithography.

Contextual Info: Datasheet for part number MDM-31SCBRM7-F222 Our Catalog Part Number: MDM-31SCBRM7-F222 Brand: Cannon Product Category: Micro Product Line: Micros Series: MICRO Product Datasheet Series Arrangement Gender Contact Material Contact Typ Contact Resistance Termination Type

8251a usart interface from z80

Abstract: UDL TM 500 f922 verilog code for 8254 timer l912 256x32 POWER MODULE TM 31 udl 500 78K3 F5S4
Contextual Info: L4E75BS DÜHBÖGb 3ÔÔ B I N E C E CB-C7, 5-VOLT 0.8-M ICRON CELL-BASED CMOS ASIC NEC NEC Electronics Inc. August 1993 Description Figure 1. Integrated HDD Solution with CBC7 Cell-Based ASIC with Embedded 78K3 MPU, Compiled SRAMs and A/D Converters CB-C7 cell-based product family is a 0.8-micron drawn

S&EI CAPACITORS

Abstract: B-405 E824 e155 B504 x473
Contextual Info: r~ • "■ , y *- . :" . . / ^ lili ; . : ■ ~ 7 - ' . ■ . ■. - ^ ,í T . . . . . . . ff' / . .’ . '/ A» , =- ■ ; . - / . *# A * .- sei 'y ' - . - ' : : ' : . : ' . , > : r t CAPACITORS •• . METALLIZED POLYESTER CAPACITORS OvaI Wrap~and-Fill Style

K25Y5PN6

Contextual Info: BC COMPONENTS Class 2, low loss 0.5% max. 1 kV, 2 kV and 3 kV Ceramic disc capacitors Product specification Supersedes data of November 1997 File under BC Components, BC06 1999 Apr 15 COMPONENTS BC Components Product specification Class 2, low loss (0.5% max.)

F4823

Abstract: F2683
Contextual Info: Panasonic Plastic Film Capacitors for High Frequency Metallized Polypropylene Film Capacitor Type ECWF B D e s ig n e d fo r a p p lic a tio n s w h e re h ig h c u rre n t a n d h ig h fre q u e n c y are re q u ire d • Features • L o w - lo s s • E x c e lle n t fre q u e n c y c h a ra c te ris tic s

KFG2G16Q2A

Abstract: 0307h 0719h 63FBGA KFG2G16 onenand oneNand flash
Contextual Info: OneNAND2G KFG2G16Q2A-DEBx OneNAND4G(KFH4G16Q2A-DEBx) FLASH MEMORY KFG2G16Q2A KFH4G16Q2A 2Gb OneNAND A-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

63FBGA

Abstract: KFG1G16Q2B onenand
Contextual Info: OneNAND1Gb KFG1G16Q2B-DEBx FLASH MEMORY KFG1G16Q2B 1Gb OneNAND B-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

transistor f422

Abstract: transistor f423 f422 transistor transistor f421 BV09 F423 fet 13187 RJ4B L442 bvoe
Contextual Info: CMOS-8LCX 3-VOLT, 0.50-MICRON CMOS GATE ARRAYS CROSSCHECK TEST SUPPORT NEC Electronics Inc. Preliminary Description October 1993 Figure 1. Various CMOS-8LCX Packages NEC’s 3-volt CMOS-8LCX family consists of ultra-high performance, sub-micron gate arrays, targeted for

Contextual Info: HV LDF 0.2 % Vishay BCcomponents Ceramic Disc Capacitors Class 2, low loss 500 V, 1 kV, 2 kV and 3 kV FEATURES • High reliability • Low losses D e3 • High capacitance in small size • Kinked leads RoHS • Lead Pb -free available tangent line COMPLIANT

Contextual Info: OneNAND256 KFG5616x1A-xxB6 FLASH MEMORY OneNANDTM Specification Density 256Mb Part No. VCC(core & IO) Temperature PKG KFG5616Q1A-DEB6 1.8V(1.7V~1.95V) Extended 67FBGA(LF) KFG5616Q1A-PEB6 1.8V(1.7V~1.95V) Extended 48TSOP1 KFG5616D1A-DEB6 2.65V(2.4V~2.9V) Extended

Samsung oneNand Mux

Abstract: samsung 1Gb nand flash SAMSUNG 256Mb NAND Flash Qualification Report KFM1216Q2M 48FBGA 8017h 2112b 1001Ah 803FH samsung 2GB Nand flash 121 pins
Contextual Info: MuxOneNAND512 KFM1216Q2M FLASH MEMORY MuxOneNAND SPECIFICATION Product Part No. VCC(core & IO) PKG MuxOneNAND512 KFM1216Q2M 1.8V(1.7V~1.95V) 48FBGA(LF) Version: Ver. 1.3 Date: June 15th, 2005 1 MuxOneNAND512(KFM1216Q2M) FLASH MEMORY INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,

a1277

Abstract: a968 a1684 B41822 b43822 A4108 A1567 A1474 a933 B41835
Contextual Info: Single Ended GP - Capacitors B 41821 Standard Series - 85°C B 43821 Construction Radial leads Charge-discharge proof, polar Aluminum case, insulating sleeve Minus pole marking on case surface Stand off rubber seal Features Miniaturized dimensions High CV product, i.e. Very compact

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS07-12626-3E 8-bit Microcontroller CMOS F2MC-8FX MB95220H Series F222H/F223H F222K/F223K • DESCRIPTION MB95220H are a series of general-purpose, single-chip microcontrollers. In addition to a compact instruction set,