F120 Search Results

HLC2020

Abstract: MFS470B E110075 LC370-CYF HL230 F120 F121CY3K-28V-P FF200 RPLH16-00 LCF470cyf
Contextual Info:  Energy Efficient Relampable Panel Mount 595nm Yellow Panel LED Lamps Relampable Panel LED Lamps 5/16" 8.0mm Mtg. Dia. Relampable Panel LED Lamps 0.46" (11.7mm) Mtg. Dia. .93 1.20 .17 .22 .30 .44 FF200 F120 Lens Cap Part No.: HL230-YC Holder Part No.: HLC2020

F1206FA

Abstract: FHC32 n 431 transistor FHC10 Kamaya FUSE 1206FA F0603C transistor 431 a Kamaya FCC16 Littelfuse
Contextual Info: AEM Chip Fuse Cross-Reference Sheet AEM F1206FA Series F0603FA Series F0402FA Series AVX F1206B Series F0603C Series F0402E Series 3216FF, 1206FA Series 1608FF, 0603FA Series 0402FA Series Littelfuse 433, 429 Series 434, 431 Series 435 Series KOA CCP2B Series

Contextual Info: MOTOROLA Order this document by F1200Z/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M B D F1200Z Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual N-Channel with Monolithic Zener ESD Protected Gate DUAL TMOS POWER MOSFET

C8051F120TB

Abstract: C8051F120 C8051F120-TB 3700 F120 C8051F120 Target Board 79014
Contextual Info: F120 Best Practices EMI Board Radiated Measurements Document ID: EXP_4011 General Business Purpose Pg 1 / 7 EXP_4011 rev 001 Silicon Laboratories, Inc. Silicon Laboratories TITLE F120 Best Practices EMI Board Radiated Measurements SECURITY General Business Purpose

S609

Abstract: L120TWB2 PC110 led 3mm rt s467 2SB200 L120CWB2
Contextual Info: LEDTRONICS 27E D • 5423705 □ D Q a 3 c13 ? ■ T - CH ' c 3 . 5 ' FEATURES: BLUE BASED LED’s/DIRECT INCANDESCENT REPLACEMENT F200 MODEL NUMBER T1 F120 SUB. MID. FLANGE BP120 (BI-PIN) T1-3/4 F200 (MID. FLANGE) G200 (MID. GROOVE) S200 (MID. SCREW) W200 (MID. WEDGE)

Contextual Info: Communications PAC Isolators & Circulators SMF635-F1207 12.75 GHz to 13.25 GHz Specifications RF Frequency Isolation Insertion Loss VSWR Peak Power Average Power Package Size Environmental Notes Specifications subject to change without notice Mica Microwave | Manteca, CA | 1-209-825-3977 | www.Mica-MW.com

Solar Panel

Abstract: 200D6 solar panel blocking diode
Contextual Info: EIC Diodes in Solar photovoltaic PV Systems Diodes and PV cells are both devices made from P-type and N-type silicon that allow electrical current to flow in one direction only. Low Vf Rectifiers F1200 SMC1200 Silicon PV cells react to sunlight, causing electrons to flow into the cell,

Contextual Info: polyfet rf devices F1208 PATENTED GOLD METALIZED General Description Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1”1 process features gold metal for greatly extended lifetime. Low output capacitance

Contextual Info: F120150 R DACO SEMICONDUCTOR CO., LTD. TH RU MBR F120200(R) SCHOTTKY DIODE MODULE TYPES 120A Features High Surge Capability 120 Amp Rectifier 150-200 Volts Types Up to 200V VRRM FULL PACKAGE Maximum Ratings K Operating Temperature: -55 C to +150 Storage Temperature: -55 C to +150

F1200D

Abstract: F1200A F1200B P600
Contextual Info: F1200A . F1200G F1200A . F1200G Superfast Silicon Rectifier Diodes Superschnelle Silizium-Gleichrichterdioden Version 2010-07-01 Nominal Current Nennstrom ±0.1 7,5 ±0.1 62.5 ±0.5 Ø8 Type Ø 1.2 ±0.05 Dimensions - Maße [mm] 12 A Repetitive peak reverse voltage

Contextual Info: P OWER TRANSFORMER P C M O U N T : SPLIT PACK F120-100 Description: The F120-100 is a single primary and dual secondary, split bobbin design which operates with an input of 115V. The output voltage will be either 120.0V with a center-tap under a 0.1A load with the secondaries wired in series, or 60.0V

Contextual Info: F1200/F1250/F1299 RFI Filters Features: • Designed for General Purpose Common Mode and Differential Mode Applications • Higher Line-to-Line Capacitance for Protection from Pulsed, Intermittent, or Continuous RFI 1A 2A 6A 10A 20A 30A Termination Line/Load

Contextual Info: polyfet rf devices F1209 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

F12047

Contextual Info: Issued November 1991 F12047 Intelligent 4 digit dot matrix alphanumeric LED displays Stock numbers 589-309 1414 589-317 (2416) The 1414 and 2416 are four digit, 5 x 7 dot matrix display modules complete with built-in CMOS Driving circuitry. The on board integrated circuit contains

diode marking H2

Abstract: Marking H2 transistor mark code t1 COLOR marking codes marking code capacitors marking code k1 marking .H2 fuse MARKING CODE f2 marking code e2 marking code L2
Contextual Info: ACCU-GUARD FUSE MARKING CODES F1206A marking by special order only Code Current (A) C1 0.2 F1 0.25 G1 0.375 H1 0.50 K1 0.75 11 1.00 P1 1.25 L1 1.50 T1 1.75 21 2.00 V2 2.50 32 3.00 ⇒ Marking location : white side F0805B (all production is marked) Code

sc 1091

Contextual Info: MECHANICAL DATA MCFP018 – OCTOBER 1994 HBG S-CQFP-F120 CERAMIC FLATPACK WITH TIE-BAR CARRIER 0.917 (23,29) 0.909 (23,09) 0.061 (1,55) DIA 0.057 (1,45) 90 0.814 (20,68) 0.806 (20,47) 0.014 (0,41) 0.012 (0,30) 0.0335 (0,851) 0.0295 (0,749) 0.006 (0,15) Thick

Contextual Info: F1200D 超快恢复整流二极管 ltra-Fast Recovery Rectifier Diodes •特征 ● Io ■外形尺寸和印记 Features Outline Dimensions and Mark 12.0A R -7 VRRM 400V ● 玻璃钝化芯片 Glass passivated chip ● ● 耐正向浪涌电流能力高 High surge forward current capability

Contextual Info: PRODUCT Æ lltron CÂTÂl ' N-CHANNEL ENHANCEMENT MGS FET 100V, 9.2A, S D F120 S D F120 SD F120 0 .2 7 n ABSOLUTE MAXIMUM RATINGS JAA JAB JDA PARAMETER Rg s =1.0Mh SCHEMATIC Î T E R M I N A L CO N N E CTIO N S H G -© 1 GATE 1 D R A IN 2 D R A IN 2 SOURCE

F1207

Abstract: 1325GHz
Contextual Info: Communications PAC Isolators & Circulators SMF635-F1207 12.75GHz to 13.25GHz Specifications RF Frequency Isolation Insertion Loss VSWR Peak Power Average Power Package Size Environmental Notes Specifications subject to change without notice Mica Microwave | Manteca, CA | 1-209-825-3977 | www.Mica-MW.com

General Purpose

Abstract: F1200/F1250/F1299
Contextual Info: F1200/F1250/F1299 RFI Filters Features: • Designed for General Purpose Common Mode and Differential Mode Applications • Higher Line-to-Line Capacitance for Protection from Pulsed, Intermittent, or Continuous RFI 1A 2A 6A 10A 20A 30A Termination Line/Load

F1206

Contextual Info: polyfet rf devices F1206 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

Contextual Info: ERS1210HUX104J165 aka F120HT104J016V Capacitor, film, 0.1 uF, 5% Tol, 16V@85C L W W T T o p Vie w Dimensions mm E n d Vie w Specifications ID Dimension Tolerance L W T F 3.2 2.5 2.1 0.65 +/-0.2 +/-0.2 +/-0.2 +/-0.3 Powered by IntelliData.net F Manufacturer:

"Power Diode" 20A Vf less 0.7

Abstract: P1000 diode rectifier diode BY2000 F-1200 BY255 diode P1000 diode 20A Diode axial leads ultra low drop, high current diode P1000S SB15
Contextual Info: Diotec Products for Solar Modules Diodes for Bypass Operation „Low Vf“ Bipolar Diodes for Standard Modules P1200, F1200, FT2000 Reverse Voltage up to 200 V = more rugged against voltage spikes

Contextual Info: F1200A . F1200G F1200A . F1200G Superfast Silicon Rectifier Diodes Superschnelle Silizium-Gleichrichterdioden Version 2013-02-01 Nominal Current Nennstrom ±0.1 7,5 ±0.1 62.5 ±0.5 Ø8 Type Ø 1.2 ±0.05 Dimensions - Maße [mm] 12 A Repetitive peak reverse voltage