SI4425BDY Search Results

Si4425BDY

Abstract: 15TR13
Contextual Info: SPICE Device Model Si4425BDY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si4425BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Advanced High Cell Density Process PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.012 @ VGS = −10 V −11.4 APPLICATIONS 0.019 @ VGS = −4.5 V −9.1 D Load Switches

SI4425DY-T1

Abstract: SI4425BDY Si4425DY Si4425BDY-E3 Si4425BDY-T1 Si4425BDY-T1-E3
Contextual Info: Specification Comparison Vishay Siliconix Si4425BDY vs. Si4425DY Description: P-Channel, 30 V D-S MOSFET Package: SOIC-8 Pin Out: Identical Part Number Replacements: Si4425BDY Replaces Si4425DY Si4425BDY-E3 (Lead (Pb)-free version) Replaces Si4425DY Si4425BDY-T1 Replaces Si4425DY-T1

Si4425BDY

Abstract: Si4425BDY-T1-E3 Si4425BDY-T1-GE3
Contextual Info: Si4425BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.012 at VGS = - 10 V - 11.4 0.019 at VGS = - 4.5 V - 9.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

SI4425BDY

Abstract: Si4425BDY-T1-E3 Si4425BDY-T1-GE3 SI4425BDY-T1-E3 SO8
Contextual Info: Si4425BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.012 at VGS = - 10 V - 11.4 0.019 at VGS = - 4.5 V - 9.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: Si4425BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.012 at VGS = - 10 V - 11.4 0.019 at VGS = - 4.5 V - 9.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

DSA003103

Abstract: Si4425BDY Si4425BDY-T1
Contextual Info: Si4425BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 D TrenchFETr Power MOSFET D Advanced High Cell Density Process rDS(on) (W) ID (A) 0.012 @ VGS = - 10 V - 11.4 APPLICATIONS 0.019 @ VGS = - 4.5 V - 9.1 D Load Switches

Contextual Info: Si4425BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.012 at VGS = - 10 V - 11.4 0.019 at VGS = - 4.5 V - 9.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

7916

Abstract: AN609 Si4425BDY
Contextual Info: Si4425BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: Si4425BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Advanced High Cell Density Process PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.012 @ VGS = −10 V −11.4 APPLICATIONS 0.019 @ VGS = −4.5 V −9.1 D Load Switches

SI4425DDY

Abstract: SI4425DDY-T1-GE3 SI4425BDY SI4425BDY-T1-GE3 SI4425BDY-T1-E3 SO8 65188 SI4425BDY-T1-E3
Contextual Info: Specification Comparison Vishay Siliconix Si4425DDY vs. Si4425BDY Description: Package: Pin Out: P-Channel, 30-V D-S MOSFET SO-8 Identical Part Number Replacements: Si4425DDY-T1-GE3 replaces Si4425BDY-T1-E3 Si4425DDY-T1-GE3 replaces Si4425BDY-T1-GE3 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

21862

Abstract: Si4425BDY S2186
Contextual Info: Si4425BDY New Product Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) D TrenchFETr Power MOSFET D Advanced High Cell Density Process rDS(on) (W) ID (A) 0.012 @ VGS = -10 V -1 1.4 APPLICATIONS 0.019 @ VGS = -4.5 V - 9.1 D Load Switches

Contextual Info: Si4425BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.012 at VGS = - 10 V - 11.4 0.019 at VGS = - 4.5 V - 9.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Si4425BDY

Contextual Info: SPICE Device Model Si4425BDY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SI4425BDY-T1-E3

Abstract: SO-8 gs 069
Contextual Info: Si4425BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.012 at VGS = - 10 V - 11.4 0.019 at VGS = - 4.5 V - 9.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Si4425BDY

Contextual Info: SPICE Device Model Si4425BDY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4425BDY

Abstract: Si4425BDY-T1
Contextual Info: Si4425BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Advanced High Cell Density Process PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.012 @ VGS = −10 V −11.4 APPLICATIONS 0.019 @ VGS = −4.5 V −9.1 D Load Switches

73D31

Abstract: D9322 PC8394T NQ82915GM 88sa8040 PC8394T-VJG connector IDE TO SATA SIL3811 USB 1.0 A Socket wistron PC8394
Contextual Info: Intel Mobile CPU Clock Generator ICS954204 IDTCV139/CY28441 14 Y Note-6 Block Diagram Dothan: 1.6BGHz/1.73GHz 1.87GHz/2AGHz/2.1GHz Celeron:1.4GHz/1.5GHz/1.6GHz 3,4,5 AGTL+ FSB Thermal Sensor LM26 DDR2 SODIMM Socket 4 6,7,8,9,10 SMBus ATMEL AT24RF08CN 48 HDD

cx20561-12z

Abstract: IT8502 IT8502E fds8884 8502E CX20561 RT8204 ISL6251 ALPRS355B R5538
Contextual Info: 1 2 3 4 5 7 8 LE6 BLOCK DIAGRAM PCB STACK UP 6L LAYER 1 : TOP LAYER 3 : IN1 01 CPU THERMAL SENSOR CPU Penryn LAYER 2 : GND A 6 14.318MHz PAGE 6 478P uPGA /35W PAGE 4,5 LAYER 4 : IN2 A CLK_CPU_BCLK,CLK_CPU_BCLK# CLOCK GEN CLK_MCH_BCLK,CLK_MCH_BCLK# LAYER 5 : VCC

HD b3c

Abstract: reference design 88E8057 TP160A WPCE773LA0DG tps51125 W25X32V oz27C10 CX20561 C1602 a v1.3 Wistron Corporation
Contextual Info: 5 4 3 2 1 SYSTEM DC/DC MI1 Block Diagram 43 TPS51125 Project code: 91.4I201.001 PCB P/N : 48.4I201.0SB REVISION : SB INPUTS OUTPUTS 5V_S5 7A 3D3V_S5(7A) DCBATOUT 5V_AUX_S5 3D3V_AUX_S5 D D Fan1 SMSC Mobile CPU CPU EMC2106 Penryn SYSTEM DC/DC 21 INPUTS VGA 21

SI4435BDY

Abstract: pcie connector
Contextual Info: MIC2341/2341R Dual-Slot PCI Express Hot-Plug Controller General Description The MIC2341 is a dual-slot power controller supporting the power distribution requirements for Peripheral Component Interconnect Express PCI Express Hot-Plug compliant systems. The MIC2341 provides complete power control

1N4007 MINI MELF

Contextual Info: LCD Television Table of Contents BACKLIGHT INVERTER, Lighting Ignitor. 3 BACKLIGHT INVERTER, MOSFET Driver. 4

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

BS250KL-TR1-E3

Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
Contextual Info: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8