30N60 Search Results

30N60 Datasheets (2)

Filter by Manufacturer

Others

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
30N60C3		Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	34.6KB	1
30N60C3D		Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	34.6KB	1

30N60 Price and Stock

Filter by Manufacturer

Select Manufacturer


FLIP ELECTRONICS HGTG30N60A4D Insulated Gate Bipolar Transisto
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HGTG30N60A4D	Tube	22,627		70	1 - 10 - 100 $9.10 1000 $9.10 10000 $9.10	Buy Now
Rochester Electronics LLC NGTG30N60FLWG IGBT TRENCH FS 600V 60A TO-247-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NGTG30N60FLWG	Tube	8,160		124	1 - 10 - 100 - 1000 $2.41 10000 $2.41	Buy Now
Rochester Electronics LLC HGTG30N60C3D IGBT 600V 63A TO-247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HGTG30N60C3D	Bulk	5,413		40	1 - 10 - 100 $7.54 1000 $7.54 10000 $7.54	Buy Now
Infineon Technologies AG IGB30N60H3ATMA1 IGBT TRENCH FS 600V 60A TO263-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	IGB30N60H3ATMA1	Digi-Reel	4,394		1	1 $3.09 10 $2.00 100 $1.38 1000 $1.12 10000 $1.12	Buy Now
	IGB30N60H3ATMA1	Tape & Reel	4,000		1,000	1 - 10 - 100 - 1000 $1.03 10000 $0.88	Buy Now
Newark ()	IGB30N60H3ATMA1	Cut Tape	4,709		1	1 $3.21 10 $3.21 100 $1.44 1000 $1.13 10000 $1.08	Buy Now
	IGB30N60H3ATMA1	Tape & Reel	4,709		100	1 - 10 - 100 $1.44 1000 $1.13 10000 $1.08	Buy Now
EBV Elektronik	IGB30N60H3ATMA1		2,000	41 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
IXYS Corporation IXXH30N60C3D1 IGBT PT 600V 60A TO-247AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXXH30N60C3D1	Tube	1,106		1	1 $8.46 10 $8.46 100 $4.91 1000 $3.56 10000 $3.42	Buy Now
Mouser Electronics	IXXH30N60C3D1		441			1 $3.97 10 $3.97 100 $3.97 1000 $3.97 10000 $3.97	Buy Now

Find more 30N60 price and stock on Findchips.com

30N60 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
30n60b Abstract: 30N60 30N60C ic 931 Contextual Info: VCES High Speed IGBT IXSH/IXST 30N60B IXSH/IXST 30N60C ICES tfi 600 V 2.0 V 140 ns 600 V 2.5 V 70 ns Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous	Original	30N60B 30N60C O-268 O-247 30n60b 30N60 30N60C ic 931	PDF
30N60P Contextual Info: Advance Technical Information PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated IXFH 30N60P IXFT 30N60P IXFV 30N60P IXFV 30N60PS VDSS ID25 = = RDS on ≤ ≤ trr Symbol Test Conditions VDSS TJ = 25°C to 150°C	Original	30N60P 30N60PS O-268 PLUS220 30N60P	PDF
Contextual Info: IXKH 30N60C5 CoolMOS 1 Power MOSFET ID25 = 30 A VDSS = 600 V RDS on) max = 0.125 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D ﬂ D(TAB) S S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings	Original	30N60C5 O-247 20090209d	PDF
30N60P Abstract: 30N60 IXTQ30N60P PLUS220SMD equivalent for 30n60p Contextual Info: PolarHVTM Power MOSFET VDSS = 600 V ID25 = 30 A RDS on ≤ 240 m Ω IXTH 30N60P IXTQ 30N60P IXTT 30N60P IXTV 30N60P IXTV 30N60PS N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS TJ = 25° C to 150° C 600 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ	Original	30N60P 30N60PS O-268 PLUS220 30N60P 30N60 IXTQ30N60P PLUS220SMD equivalent for 30n60p	PDF
30n60 Abstract: 30N60B2 Contextual Info: Advance Technical Data HiPerFASTTM IGBT VCES IC25 VCE sat tfi typ IXGP 30N60B2 Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	30N60B2 IC110 O-220 30n60 30N60B2	PDF
30N60B2 Contextual Info: Advance Technical Data HiPerFASTTM IGBT VCES IC25 VCE sat tfi typ IXGH 30N60B2 IXGT 30N60B2 Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	30N60B2 IC110 O-268 30N60B2	PDF
30n60c Contextual Info: VCES High Speed IGBT IXSH/IXST 30N60B IXSH/IXST 30N60C ICES tfi 600 V 2.0 V 140 ns 600 V 2.5 V 70 ns Short Circuit SOA Capability Preliminary Data Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MW	Original	30N60B 30N60C O-247 O-268	PDF
Contextual Info: High Speed IGBT with Diode IXSH 30N60B2D1 IXST 30N60B2D1 VCES = 600 V I C25 = 48 A V CE sat = 2.5 V Short Circuit SOA Capability Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	30N60B2D1 IC110	PDF
Contextual Info: VCES High Speed IGBT IXSH/IXST 30N60B IXSH/IXST 30N60C ICES tfi 600 V 2.0 V 140 ns 600 V 2.5 V 70 ns Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous	Original	30N60B 30N60C O-268	PDF
B1116 Abstract: b1104 16N60 N60A B1118 10N120 B1102 B1126 24n60 35N120U1 Contextual Info: PIXYS SCSOAIGBTS-Series Contents IGBT •J v CES •> max < Tc = 25 °C V TO-220 IXSP TO-263 (IXSA) TO-247(IXSH) TO-2680XST) miniBLOC (IXSN) Page j? > > IXSA 16N60 IXSP 16N60 1.8 1.8 48 50 75 * 2.2 2.5 2.5 IXSH 24N60 IXSH 30N60 IXSH 40N60 B1-12 B1-20 B1-40	OCR Scan	O-220 O-263 O-247 O-2680XST) 16N60 24N60 30N60 40N60 25N100 B1116 b1104 N60A B1118 10N120 B1102 B1126 35N120U1	PDF
1XYS Contextual Info: a ix Y S 1 Preliminary Data Sheet v CES IXGH 30N60B IXGH 30N60BS ^C25 vv CE sat HiPerFAST IGBT = 600 V = 60 A = 1.8 V = 130 ns tfi TO-247 SMD (30N60BS) Symbol Test Conditions Maximum Ratings v CES Tj = 25°C to 150°C 600 V V* CGR Tj = 25°C to 150°C; RQE= 1 M il	OCR Scan	30N60B 30N60BS 13/10Nm/lb O-247 1XYS	PDF
30n60b Abstract: 30n60 TO-247AA 15a020 Contextual Info: HiPerFASTTM IGBT with Diode IXGH 30N60BU1 IXGT 30N60BU1 Combi Pack VCES IC25 VCE sat tfi = 600 V = 60 A = 1.8 V = 100 ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES	Original	30N60BU1 O-268 IC110 O-247 728B1 30n60b 30n60 TO-247AA 15a020	PDF
Contextual Info: HiPerFASTTM IGBT with Diode IXGH 30N60BU1 VCES IXGT 30N60BU1 IC25 VCE sat tfi = 600 V = 60 A = 1.8 V = 100 ns TO-268 (IXGT) G Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous	Original	30N60BU1 O-268 IC110 30N60BU1	PDF
Contextual Info: I Z II X Y S HiPerFAST IGBT with Diode V.CES IXGH 30N60BD1 IXGT 30N60BD1 600 60 1.8 C25 CE sat V A V 100 ns tfi(typ) Preliminary data sheet Maximum Ratings Symbol TestC onditions V CES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i	OCR Scan	30N60BD1 O-268 O-247	PDF

Contextual Info: HiPerFASTTM IGBT with Diode VCES = 600 V IC25 = 60 A VCE sat = 1.8 V tfi(typ) = 100 ns IXGH 30N60BD1 IXGT 30N60BD1 Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V	Original	30N60BD1 30N60BD1 O-247 O-268 O-268	PDF
30N60B Abstract: 30N60C Contextual Info: High Speed IGBT VCES Short Circuit SOA Capability IXSH/IXST 30N60B IXSH/IXST 30N60C ICES tfi 600 V 2.0 V 140 ns 600 V 2.5 V 70 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ	Original	30N60B 30N60C O-247 O-268 30N60C	PDF
DSA003710 Contextual Info: IXKH 30N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 30 A VDSS = 600 V RDS on max = 0.125 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D q D(TAB) S S Features MOSFET Conditions VDSS	Original	30N60C5 O-247 20070625a DSA003710	PDF
30n60p Contextual Info: Advanced Technical Information IXTQ 30N60P IXTT 30N60P PolarHVTM Power MOSFET VDSS ID25 = 600 V = 30 A ≤ 240 mΩ Ω RDS on N-Channel Enhancement Mode Symbol Test Conditions VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600 V	Original	30N60P 30N60P O-268 O-268 405B2	PDF
4013V Abstract: Siemens DIODE E 1220 30N60B2D1 Contextual Info: High Speed IGBT with Diode IXSH 30N60B2D1 IXST 30N60B2D1 VCES = 600 V I C25 = 48 A V CE sat = 2.5 V Short Circuit SOA Capability Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	30N60B2D1 30N60B2D1 IC110 O-247 O-268 4013V Siemens DIODE E 1220	PDF
MOSFET IXYS TO-220 Contextual Info: IXKH 30N60C5 IXKP 30N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 30 A VDSS = 600 V RDS on max = 0.125 W N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-247 AD (IXKH) D G G D S S D(TAB) TO-220 AB (IXKP)	Original	30N60C5 O-247 O-220 MOSFET IXYS TO-220	PDF
Contextual Info: IXKH 30N60C5 COOLMOS * Power MOSFET ID25 = 30 A VDSS = 600 V RDS on max = 0.125 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D q D(TAB) S S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings	Original	30N60C5 O-247 20080310b	PDF
UPS SIEMENS Abstract: 30N60C siemens servo motor siemens igbt Contextual Info: HiPerFASTTM IGBT VCES IC25 VCE sat tfi typ IXGP 30N60C2 C2- Class High Speed IGBTs Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C (limited by leads)	Original	30N60C2 IC110 O-220 UPS SIEMENS 30N60C siemens servo motor siemens igbt	PDF
30n60 Abstract: 30N60P PLUS220SMD Contextual Info: Advanced Technical Information PolarHVTM Power MOSFET IXTH 30N60P IXTQ 30N60P IXTT 30N60P IXTV 30N60P IXTV 30N60PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated VDSS ID25 = 600 V = 30 A Ω RDS on ≤ 240 mΩ Symbol Test Conditions Maximum Ratings	Original	30N60P 30N60PS O-247 PLUS220 30N60P 30n60 PLUS220SMD	PDF
Contextual Info: HiPerFASTTM IGBT with Diode C2-Class High Speed IGBTs Symbol Test Conditions IXGH 30N60C2D1 VCES IXGT 30N60C2D1 IC25 VCE sat tfi typ Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM	Original	30N60C2D1 IC110 O-247 O-268	PDF

30N60 Search Results

30N60 Datasheets (2)

30N60 Price and Stock

FLIP ELECTRONICS HGTG30N60A4D

Rochester Electronics LLC NGTG30N60FLWG

Rochester Electronics LLC HGTG30N60C3D

Infineon Technologies AG IGB30N60H3ATMA1

IXYS Corporation IXXH30N60C3D1

30N60 Datasheets Context Search

30n60b

30N60P

30N60P

30n60

30N60B2

30n60c

B1116

1XYS

30n60b

30N60B

DSA003710

30n60p

4013V

MOSFET IXYS TO-220

UPS SIEMENS

30n60