2T23 Search Results

Contextual Info: SGS-THOMSON TEA2018A CURRENT MODE SWITCHING POWER SUPPLY CONTROL CIRCUIT • DIRECT DRIVE OF THE EXTERNAL SWITCHING TRANSISTOR ■ POSITIVE AND NEGATIVE OUTPUT CUR­ RENTS UP TO 0.5 A ■ CURRENT LIMITATION ■ TRANSFORMER DEMAGNETIZATION SENSING ■ FULL OVERLOAD AND SHORT-CIRCUIT

Contextual Info: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT ¿¿PD488448, 488488 128/144 M-bit Direct Rambus DRAM Description The Direct Rambus DRAM Direct RDRAM™ is a general purpose high-performance memory device suitable for use in a broad range of applications including com puter memory, graphics, video, and any other application where

Contextual Info: THE INFORMATION CONTAINED HEREIN IS CONSIDERED 'PROPRIETARY' TO BEL FUSE INC. AND SHALL NOT BE COPIED, REPRODUCED OR DISCLOSED WITHOUT THE WRITTEN APPROVAL OF BEL FUSE INC. RoHS 2002/95/EC SCHEMATIC ELECTRICAL CHARACTERISTICS 6 25° C TURNS RATID TP1 1CT 1CT ±2%

L4931CV25

Abstract: MI 4606 1T010 L4931 Series L4931 L4931CD12 L4931CDT12 L4931CPT12 L4931CV12 or p013m
Contextual Info: S G S - T H O M S O L4931 SERIES N ILI VERY LOW DROP VOLTAGE REGULATORS WITH INHIBIT PRELIMINARY DATA • V E R Y LOW D RO PO U T V O LTA G E 0.4V . V E R Y LOW Q U IE S C E N T C U R R EN T (TYP. 50 |iA IN O F F MODE, 600|aA IN ON MODE) . O U TP U T C U R R E N T UP TO 250 mA

BU931ZT

Abstract: BU931ZSM BU931ZTFI ignition coil npn power darlington BU931
Contextual Info: SGS-THOMSON RÆ Œ(mi(gïïi(Q KS BU931ZT/BU931ZTFI BU931ZSM HIGH VOLTAGE IGNITION COIL DRIVER NPN PO W ER DARLINGTON . VERY RUGGED BIPOLAR TECHNOLOGY . BUILT IN CLAMPING ZENER . HIGH OPERATING JUNCTION TEMPERATURE . WIDE RANGE OF PACKAGES . NEW REAL POWER SURFACE MOUNTING

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

Contextual Info: THE INFORMATION CONTAINED HEREIN IS CONSIDERED 'PROPRIETARY' TO BEL FUSE INC, AND SHALL NOT BE COPIED, REPRODUCED OR DISCLOSED WITHOUT THE WRITTEN APPROVAL OF BEL FUSE INC. LED1 PDLARITY PIN 13 PIN 14 CDLDR GREEN — LED1 13 TURNS RATID 1CT 1CT 1CT 1CT 1CT

2n189

Abstract: 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152
Contextual Info: INTERNATIONAL TRANSISTOR SUBSTITUTION GUIDEBOOK by KEATS A. PULLEN. Jr., Eng. D. Member of the Scientific Staff, Ballistic Research Laboratories, Aberdeen Proving G rounds Adjunct Professor of Electrical Engineering, Drexel Institute of Technology Author of: Conductance Design of Active Circuits

Contextual Info: M ITSU B ISH I LSlS M5M4V18165BTP-6,-7,-6S,-7S H YPER PAGE M ODE 16777216-B IT 1048576-W Q R D B Y 16-BIT DYN A M IC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) This is a family of 1048576-word by 16-bit dynamic RAMS, fabricated with the high performance CMOS process, and is ideal

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

Tr431

Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200

bcm 4330

Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min
Contextual Info: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?

LG 631 9R

Abstract: ilpi - 031 ilpi 031 ilpi -243 11N6 CTC 1351 ilpi - 003 dmo 365 r fm transmitter 5km RDT SOT 363
Contextual Info: A T /. S G S -T H O M S O N a n o a m i g g T M o e g _ S T L C 5 4 1 1 2B1Q U INTERFACE DEVICE A D VA N CE QATA G ENERAL FEATURES • SINGLE CHIP 2B1Q LINE CODE TRANS­ CEIVER ■ SUITABLE FOR BOTH ISDN AND PAIR GAIN APPLICATIONS ■ MEETS OR EXCEEDS ANSI U.S. AND ETSI

10MSA

Abstract: TA 555
Contextual Info: 3QE ]> • 7^1237 Q031ô3b b ■ 1 / £ Z 7 SGSTHO M SON ^ 7# S s 6 I L iO T M O ig i T O D V 1 2 5 — > 1 2 2 5 S-THOMSON ALTERNISTORS > 88 A/ms 400 Hz ■ INSULATING VOLTAGE : 2500 (t < 1 mn - F = 50 Hz) ■ UL RECOGNIZED (EB1734) ■ ( d i/ d t) c V rms

Contextual Info: Æ r T S G S -T H O M S O N Q §[|3 iHi(§!i3 K5D(g® L4962 1,5A POWER SWITCHING REGULATOR • 1.5A OUTPUT CURFENT ■ 5.1 V TO 40V OUTPUT VOLTAGE RANGE ■ PRECISE (±2% ON-CHIP REFERENCE ■ HIGHSWrTCHING FREQUENCY ■ VERY HIGH EFFICIENCY (UP TO 90%)

Contextual Info: S G S -T H O M $ 7 . S O N M27V800 R Æ Û [E ]© [i[L I© T O Q K !]a (g i LOW VOLTAGE 8 Megabit (1 Meg x 8 or 512K x 16) _UV EPROM and OTP EPROM PRODUCT PREVIEW • LOW VOLTAGE READ OPERATION: 3V to 5.5V ■ FAST ACCESS TIME: 120ns

4-T238

Abstract: 83523 r001
Contextual Info: FHR FNR 2-T238 4-T238 • Extremly Low-Ohm • High Stability • Two And Four Circuit Technology • Low Temperature Coefficient • Low Electrical Noise • Low Inductance SPECIFICATIONS ELECTRICAL FHR 2/4-T238 FNR 2/4-T238 Resistance Range : R01/R001.100R

LS 2027 audio amp

Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
Contextual Info: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

SGS-TH0M80N

Abstract: BYV255V BYV255-V BYV25
Contextual Info: /= 7 SGS-THOMSON m 7 # BYV255V HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES FEATURES • SUITED FOR SMPS . VERY LOW FORWARD LOSSES ■ NEGLIGIBLE SWITCHING LOSSES ■ HIGH SURGE CURRENT CAPABILITY . HIGH AVALANCHE ENERGY CAPABILITY ■ INSULATED: Insulating voltage = 2500 V rms

2-T238

Abstract: r001 T238 T-238
Contextual Info: FHR FNR 2-T238 4-T238 • Extremely Low Ohm Rating • High Stability • Two- and Four Circuit Technology • Low Temperatur Coefficient • Low Electrical Noise • Low Inductance SPECIFICATIONS ELECTRICAL FHR 2/4-T238 FHN 2-T238 FNR 2/4-T238 FNN 2-T238

74HC132B

Contextual Info: M54HC132 M74HC132 SGS-THOMSON « im iO T O K S QUAD 2-INPUT SCHMITT NAND GATE • HIGH SPEED tpD = 11 ns TYP. AT V c c = 5 V ■ LOW POWER DISSIPATION Ice = 1fiA (MAX.) AT Ta = 25 °C ■ OUTPUT DRIVE CAPABILITY 10 LSTTLLOADS ■ HIGH NOISE IMMUNITY V h (TYP.) = 0.9 V AT Vcc = 5 V

Contextual Info: IB M 0 7 1 2 1 6 1 K U 1A 128Mb Direct RDRAM Datasheet Advance Features • Data Mask for Byte W rite Control • Pipelined Memory Accesses • 16 bit Data I/O Width • 2x16 Dependent Banks w / 1KByte Page Size • Independent Row, Column & Data Busses • 300MHz and 400MHz clock frequencies

Contextual Info: IB M 0 7 1 2 1 6 1 K U 1A 128Mb Direct RDRAM Datasheet Advance Features • Data Mask for Byte W rite Control • Pipelined Memory Accesses • 16 bit Data I/O Width • 2x16 Dependent Banks w / 1KByte Page Size • Independent Row, Column & Data Busses • 300MHz and 400MHz clock frequencies