2SK212 Search Results

2SK2124

Abstract: DSA003718
Contextual Info: Power F-MOS FETs 2SK2124 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 130mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 60ns ● No secondary breakdown unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2

2SK245

Abstract: 2SK270 2SK243 2sk205 2SK239A 2SK224 2SK214 2SK259H 2Sk226 2SK240
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) Pd/Pch Tj/Tch VDS min max 2SK201 2SK203 2SK205 2SK208 2SK209 2SK210 2SK211 2SK212 2SK213 2SK214 2SK215 2SK216 2SK217 2SK218 2SK219 2SK220H

Contextual Info: 2SK2123 Power F-MOS FETs 2SK2123 Silicon N-Channel Power F-MOS Unit : mm • Features energy capability guaranteed : EAS > 100mJ 4.6±0.2 ● V GSS=±30V guaranteed secondary breakdown ● Solenoid ● Motor +0.5 ● Non-contact 13.7 -0.2 ■ Applications

Contextual Info: 2SK2122 Power F-MOS FETs 2SK2122 Silicon N-Channel Power F-MOS Unit : mm • Features ● Avalanche energy capability guaranteed : EAS > 3.2mJ ● High-speed switching : tf= 50ns ø3.2±0.1 2.9±0.2 ■ Applications ● Motor +0.5 ● Solenoid relay 13.7 -0.2

Contextual Info: 2SK2128 Power F-MOS FETs 2SK2128 Silicon N-Channel Power F-MOS Unit : mm • Features energy capability guaranteed : EAS >15mJ 4.6±0.2 ● V GSS=±20V guaranteed secondary breakdown ● Solenoid ● Motor +0.5 ● Non-contact 13.7 -0.2 ■ Applications relay

Contextual Info: Panasonic Power F-MOS FETs 2SK2128 Silicon N-Channel Power F-MOS • Features U nit : mm • Avalanche energy capability guaranteed : EAS >15mJ • V gss=±20V guaranteed • High-speed switching : t|= 35ns • No secondary breakdown ■Applications • •

Contextual Info: Power F-MOS FETs 2SK2122 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 3.2mJ ● High-speed switching: tf = 50ns ● No secondary breakdown unit: mm 4.6±0.2 +0.5 13.7–0.2 15.0±0.3 ● Contactless relay ● Diving circuit for a solenoid

Contextual Info: Power F-MOS FETs 2SK2125 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 15.6mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 35ns ● No secondary breakdown unit: mm 4.6±0.2 M Di ain sc te on na

Contextual Info: O rd e rin g n u m b er :E N 661 D J i SA\YO N 0.66ID _ 2SK212 N-Channel Junction Silicon FET FM Tuner Applications FEATURES Ideal fo r FM tuners in low voltage radios, car radios, etc. Because it is com pactly packaged, sets can be made compact. Sm all Crss crss = 0.04 pF typ .

25K212

Abstract: 2SK212A 2SK212 777T 1I103
Contextual Info: Ordering number: EN661E _ 2SK212 N0.66IE N-Channel Junction Silicon FET S A ify o j FM Tuner Applications F eatu res • Ideal for FM tuners in low-volt age radios, car radios, etc. • Small-sized package permitting 2SK212-applied sets to be made small and slim.

2SK2129

Contextual Info: Power F-MOS FETs 2SK2129 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 20mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 50ns ● No secondary breakdown unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2

2SK2125

Abstract: 2sk21
Contextual Info: Power F-MOS FETs 2SK2125 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 15.6mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 35ns ● No secondary breakdown M Di ain sc te on na tin nc ue e/ d unit: mm

2SK2125

Contextual Info: Power F-MOS FETs 2SK2125 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 15.6mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 35ns ● No secondary breakdown unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3

c9012

Abstract: C90-12 2SK2121
Contextual Info: 2SK2121 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC-DC converter

2SK2124

Contextual Info: Panasonic Power F-MOS FETs 2SK2124 Silicon N-Channel Power F-MOS U nit : mm • Features • Avalanche energy capability guaranteed : EAS > 130mJ • V gss=±30V guaranteed • High-speed switching : t|= 60ns • No secondary breakdown ■ Applications • Non-contact relay

Contextual Info: 2SK2120 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC-DC converter

MJ 1503

Contextual Info: Power F-MOS FETs 2SK2126 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 100mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 40ns ● No secondary breakdown unit: mm 4.6±0.2 M Di ain sc te on na

Contextual Info: Power F-MOS FETs 2SK2123 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 100mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 35ns ● No secondary breakdown unit: mm 4.6±0.2 M Di ain sc te on na

2SK2121

Contextual Info: 2SK2121 Silicon N Channel MOS FET Application TO–3P High speed power switching Features • • • • Low on–resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC – DC

Contextual Info: Panasonic Power F-MOS FETs 2SK2122 Silicon N-Channel Power F-MOS Unit : mm • Features • Avalanche energy capability guaranteed : EAS > 3.2mJ • High-speed switching : tj= 50ns • No secondary breakdown ■ Applications • • • • • Non-contact relay

2SK2127

Contextual Info: Panasonic Power F-MOS FETs 2SK2127 Silicon N-Channel Power F-MOS Unit : mm • Features • • • • Avalanche energy capability guaranteed : EAS > 130mJ V<;s s = ± 3 0 V guaranteed High-speed switching : t|= 60ns No secondary breakdown ■ Applications

Contextual Info: Panasonic P o w e r F -M O S F E T s 2SK2123 Silicon N-Channel Power F-MOS U nit : mm • Features • Avalanche energy capability guaranteed : EAS > lOOmJ • V< ; s s = ± 3 0 V guaranteed • High-speed switching : t|= 35ns • No secondary breakdown ■ A p p lica tio n s

2SK2129

Abstract: 55V 80 A 2a DIODE
Contextual Info: Power F-MOS FETs 2SK2129 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 20mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 50ns ● No secondary breakdown unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2

2SK2126

Contextual Info: Power F-MOS FETs 2SK2126 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 100mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 40ns ● No secondary breakdown M Di ain sc te on na tin nc ue e/ d unit: mm