130MJ Search Results
130MJ Price and Stock
| Rochester Electronics LLC HFA1130MJ-883IC OPAMP CFA 1 CIRCUIT 8CERDIP | |||||||||||
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|   | HFA1130MJ-883 | Bulk | 15 | 
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| KEMET Corporation PEG130MJ4140QE4CAP ALUM 1400UF 63V AXIAL TH | |||||||||||
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|   | PEG130MJ4140QE4 | Bulk | 1,161 | 
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|   | PEG130MJ4140QE4 | 31 Weeks | 1,161 | 
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| KEMET Corporation PEG130MJ4140QL1CAP ALUM 1400UF 63V AXIAL TH | |||||||||||
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|   | PEG130MJ4140QL1 | Bulk | 
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|   | PEG130MJ4140QL1 | Box | 1,000 | 
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|   | PEG130MJ4140QL1 | 65 | 
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|   | PEG130MJ4140QL1 | 143 Weeks | 125 | 
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|   | PEG130MJ4140QL1 | 1,070 | 
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| Vishay Dale CRCW1206130MJPTAHRRES SMD 130M OHM 5% 1/4W 1206 | |||||||||||
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|   | CRCW1206130MJPTAHR | Reel | 5,000 | 
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| Vishay Dale CRCW0603130MJPEAHRRES SMD 130M OHM 5% 1/8W 0603 | |||||||||||
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|   | CRCW0603130MJPEAHR | Reel | 5,000 | 
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130MJ Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
| 2SK2124
Abstract: DSA003718 
 | Original | 2SK2124 130mJ O-220E 2SK2124 DSA003718 | |
| 2SK2124Contextual Info: Panasonic Power F-MOS FETs 2SK2124 Silicon N-Channel Power F-MOS U nit : mm • Features • Avalanche energy capability guaranteed : EAS > 130mJ • V gss=±30V guaranteed • High-speed switching : t|= 60ns • No secondary breakdown ■ Applications • Non-contact relay | OCR Scan | 2SK2124 130mJ -220E 2SK2124 | |
| 2SK2127Contextual Info: Panasonic Power F-MOS FETs 2SK2127 Silicon N-Channel Power F-MOS Unit : mm • Features • • • • Avalanche energy capability guaranteed : EAS > 130mJ V<;s s = ± 3 0 V guaranteed High-speed switching : t|= 60ns No secondary breakdown ■ Applications | OCR Scan | 2SK2127 130mJ 2SK2127 | |
| 2SK3044Contextual Info: Power F-MOS FETs 2SK3044 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 130mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 50ns ● No secondary breakdown unit: mm 9.9±0.3 3.0±0.5 15.0±0.5 ■ Absolute Maximum Ratings TC = 25°C | Original | 2SK3044 130mJ O-220D-A1 2SK3044 | |
| 2SK2127Contextual Info: 2SK2127 Power F-MOS FETs 2SK2127 Silicon N-Channel Power F-MOS Unit : mm • Features energy capability guaranteed : EAS > 130mJ 4.6±0.2 ● V GSS=±30V guaranteed secondary breakdown ● Solenoid ● Motor +0.5 ● Non-contact 13.7 -0.2 ■ Applications | Original | 2SK2127 130mJ O-220E 2SK2127 | |
| 2SK2127Contextual Info: Power F-MOS FETs 2SK2127 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 130mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 60ns ● No secondary breakdown unit: mm 4.6±0.2 M Di ain sc te on na | Original | 2SK2127 130mJ 2SK2127 | |
| 2SK3046Contextual Info: Power F-MOS FETs 2SK3046 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 130mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 60ns ● No secondary breakdown unit: mm 3.0±0.5 φ3.2±0.1 1.4±0.2 13.7±0.2 | Original | 2SK3046 130mJ O-220D 2SK3046 | |
| 2SK3046Contextual Info: Power F-MOS FETs 2SK3046 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 130mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 60ns ● No secondary breakdown unit: mm 3.0±0.5 φ3.2±0.1 1.4±0.2 13.7±0.2 | Original | 2SK3046 130mJ O-220D 2SK3046 | |
| 2SK2124Contextual Info: Power F-MOS FETs 2SK2124 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 130mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 60ns ● No secondary breakdown M Di ain sc te on na tin nc ue e/ d unit: mm | Original | 2SK2124 130mJ O-220E 2SK2124 | |
| 2sk2127Contextual Info: Power F-MOS FETs 2SK2127 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 130mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 60ns ● No secondary breakdown M Di ain sc te on na tin nc ue e/ d unit: mm | Original | 2SK2127 130mJ 2sk2127 | |
| 2sk2127Contextual Info: Power F-MOS FETs 2SK2127 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 130mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 60ns ● No secondary breakdown unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2 | Original | 2SK2127 130mJ O-220E 2sk2127 | |
| 2SK3044Contextual Info: Power F-MOS FETs 2SK3044 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 130mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 50ns ● No secondary breakdown unit: mm 3.0±0.5 φ3.2±0.1 1.4±0.2 13.7±0.2 | Original | 2SK3044 130mJ O-220D 2SK3044 | |
| Contextual Info: 2SK2124 Power F-MOS FETs 2SK2124 Silicon N-Channel Power F-MOS Unit : mm • Features energy capability guaranteed : EAS > 130mJ 4.6±0.2 ● V GSS=±30V guaranteed secondary breakdown ● Solenoid ● Motor +0.5 ● Non-contact 13.7 -0.2 ■ Applications | Original | 2SK2124 130mJ O-220E | |
| 2SK2124Contextual Info: Power F-MOS FETs 2SK2124 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 130mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 60ns ● No secondary breakdown unit: mm 4.6±0.2 M Di ain sc te on na | Original | 2SK2124 130mJ 2SK2124 | |
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| 2SK3044Contextual Info: Power F-MOS FETs 2SK3044 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 130mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 50ns ● No secondary breakdown unit: mm 3.0±0.5 φ3.2±0.1 1.4±0.2 13.7±0.2 | Original | 2SK3044 130mJ O-220D 2SK3044 | |
| BTS5242L
Abstract: BTS 5242-2L 5242-2l 
 | Original | 5242-2L BTS5242L BTS 5242-2L 5242-2l | |
| BTS5441
Abstract: INFINEON PART MARKING bts BTS5441G 
 | Original | 5441-2G BTS5441 INFINEON PART MARKING bts BTS5441G | |
| SMD transistor package code V12
Abstract: BTS5246L 
 | Original | 5246-2L SMD transistor package code V12 BTS5246L | |
| BTS5241G
Abstract: 5241-2G bts5241 Infineon BTS 3110 N PG-DSO-20-43 
 | Original | 5241-2G BTS5241G 5241-2G bts5241 Infineon BTS 3110 N PG-DSO-20-43 | |
| transistor 315
Abstract: 2l TRANSISTOR SMD MARKING CODE BTS 5242-2L TRANSISTOR SMD MARKING CODE 2l SMD transistor package code V12 
 | Original | 5242-2L transistor 315 2l TRANSISTOR SMD MARKING CODE BTS 5242-2L TRANSISTOR SMD MARKING CODE 2l SMD transistor package code V12 | |
| bts5241l
Abstract: bts5241 
 | Original | 5241-2L bts5241l bts5241 | |
| BTS5246L
Abstract: 2l TRANSISTOR SMD MARKING CODE BTS5246-2L SMD transistor package code V12 5246-2L PG-DSO-12-9 smd transistor 2l TRANSISTOR SMD MARKING CODE 2l SMD code V12 bts52 
 | Original | 5246-2L BTS5246L 2l TRANSISTOR SMD MARKING CODE BTS5246-2L SMD transistor package code V12 5246-2L PG-DSO-12-9 smd transistor 2l TRANSISTOR SMD MARKING CODE 2l SMD code V12 bts52 | |