100MJ Search Results

2SK3043

Contextual Info: Power F-MOS FETs 2SK3043 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 100mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 35ns ● No secondary breakdown unit: mm 3.0±0.5 φ3.2±0.1 1.4±0.2 13.7±0.2

Contextual Info: 2SK2123 Power F-MOS FETs 2SK2123 Silicon N-Channel Power F-MOS Unit : mm • Features energy capability guaranteed : EAS > 100mJ 4.6±0.2 ● V GSS=±30V guaranteed secondary breakdown ● Solenoid ● Motor +0.5 ● Non-contact 13.7 -0.2 ■ Applications

MJ 1503

Contextual Info: Power F-MOS FETs 2SK2126 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 100mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 40ns ● No secondary breakdown unit: mm 4.6±0.2 M Di ain sc te on na

Contextual Info: Power F-MOS FETs 2SK2123 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 100mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 35ns ● No secondary breakdown unit: mm 4.6±0.2 M Di ain sc te on na

2SK2126

Contextual Info: Power F-MOS FETs 2SK2126 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 100mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 40ns ● No secondary breakdown M Di ain sc te on na tin nc ue e/ d unit: mm

2SK2123

Contextual Info: Power F-MOS FETs 2SK2123 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 100mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 35ns ● No secondary breakdown unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2

2SK2924

Contextual Info: Power F-MOS FETs 2SK2924 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 100mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 35ns ● No secondary breakdown M Di ain sc te on na tin nc ue e/ d unit: mm

Contextual Info: Power F-MOS FETs 2SK2924 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 100mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 35ns ● No secondary breakdown unit: mm 4.6±0.2 15.0±0.3 ■ Applications

2SK2123

Contextual Info: Power F-MOS FETs 2SK2123 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 100mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 35ns ● No secondary breakdown M Di ain sc te on na tin nc ue e/ d unit: mm

2SK2924

Contextual Info: Power F-MOS FETs 2SK2924 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 100mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 35ns ● No secondary breakdown unit: mm 4.6±0.2 +0.5 13.7–0.2 ● Contactless relay

Contextual Info: 2SK2126 Power F-MOS FETs 2SK2126 Silicon N-Channel Power F-MOS Unit : mm • Features energy capability guaranteed : EAS > 100mJ 4.6±0.2 ● V GSS=±30V guaranteed secondary breakdown ● Solenoid ● Motor +0.5 ● Non-contact 13.7 -0.2 ■ Applications

100MJ

Abstract: 2SK2126
Contextual Info: Power F-MOS FETs 2SK2126 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 100mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 40ns ● No secondary breakdown unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2

2SK3043

Contextual Info: Power F-MOS FETs 2SK3043 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 100mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 35ns ● No secondary breakdown unit: mm 3.0±0.5 φ3.2±0.1 1.4±0.2 13.7±0.2

2SK2126

Contextual Info: Power F-MOS FETs 2SK2126 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 100mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 40ns ● No secondary breakdown unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2

2n6325

Abstract: 2N6323 on 5297 transistor 2N6322 2N6324 NS2N
Contextual Info: TYPES 2N6322 THRU 2N6325 N-P-N SILICON POWER TRANSISTORS TYPES 2N6322 THRU 2N6325 BULLETIN NO. DL-S 7211589, JANUARY HIGH VOLTAGE, HIGH FORWARD AND REVERSE ENERGY DESIGNED FOR INDUSTRIAL AND M ILIT A R Y APPLICATIONS • 100-mJ Reverse-Energy Rating • 30-A Rated Continuous Collector Current

Contextual Info: TPIC6E175 POWER LOGIC EEPROM-PROGRAMMABLE QUAD D-TYPE LATCH SLIS052 - NO VEM BER 1995 NE PACKAGE TOP VIEW Programmable-PWM Current Threshold Programmable-PWM Frequency Controlled by Internal or External Oscillator O S C /V E R [ 1 DRAIN1 [ 2 Integrated Output Recirculation Clamp

NS 12575T 6R8MN

Abstract: hioki 3200 hp 4192a nrs8030 NRS4018 NRV2012T NRS4018T220MDGJ 470MN NRS5024T4R7MMGJ NS 12565T 680MN
Contextual Info: Notice for TAIYO YUDEN products Please read this notice before using the TAIYO YUDEN products. REMINDERS • Product information in this catalog is as of October 2011. All of the contents specified herein are subject to change without notice due to technical improvements, etc. Therefore, please check for the latest information carefully before practical application or usage of the Products.

mosfet to ignition coil

Abstract: IGBT DRIVER Analog Devices IGBT DRIVER ignition coil automotive ignition IGBTS automotive ignition coil on plug injector MOSFET driver ignition driver MC33810 ignition coil RSN 310 R 36
Contextual Info: Freescale Semiconductor Advance Information Document Number: MC33810 Rev. 6.0, 12/2008 Automotive Engine Control IC 33810 The 33810 is an eight channel output driver IC intended for automotive engine control applications. The IC consists of four integrated low side drivers and four low side gate pre-drivers. The low

NRS5040T

Abstract: NRH3010 NRS8040 NRS5024 NRS6028 NRH2412 NRS4018 NRS5024T4R7MMGJ 220MMGK NRS2012
Contextual Info: Notice for TAIYO YUDEN products Please read this notice before using the TAIYO YUDEN products. REMINDERS • Product information in this catalog is as of October 2011. All of the contents specified herein are subject to change without notice due to technical improvements, etc. Therefore, please check for the latest information carefully before practical application or usage of the Products.

kxj series 450

Abstract: KXG capacitor ekxg401e220mk20s 400V KXG 82 CAPACITOR 105 100uF 400V Electrolytic Capacitor 105
Contextual Info: MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS 160 to 450Vdc long life, 105℃ KXJ ●For electronic ballast circuits and other long life applications ●Endurance with ripple current : 8,000 to 10,000 hours at 105℃ ●Non solvent resistant type ● RoHS Compliant

ISL9G1260EG3

Abstract: ISL9G1260EP3 ISL9G1260ES3 ISL9G1260ES3T
Contextual Info: ISL9G1260EG3, ISL9G1260EP3, ISL9G1260ES3 Data Sheet January 2002 600V, SMPS II LGC Series N-Channel IGBT Features The ISL9G1260EG3, ISL9G1260EP3 and ISL9G1260ES3 are Low Gate Charge LGC SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs with lower gate

EKLJ401E390MM20S

Abstract: EKLJ401E330ML20S
Contextual Info: 小型铝电解电容器 小型化 系列 引线型・对应异常电压（105℃） RoHS指令 适应品 ＫＬＪ ● 加载过电压时防止引起火花。 ● 保证 105℃ 2,000 小时。 纹波叠加 ESR 值。 ● 请注意不属于基板清洗类型。

ESMQ500E100ME11D

Abstract: ESMQ630E332MN40S ESMQ630E101MHB5D eSmq6r3e222mj16s ESMQ250E471MJC5S ESMQ401E3R3MHB5D ESMQ160E222MJ20S esmq250e331mhb5d
Contextual Info: 小型铝电解电容器 RoHS指令 适应品 小型化 系列 引线型・小型化品（85℃） ＳＭＱ SMG 系列小型化品。 85℃ 2,000 小时。 ● 请注意不属于基板清洗类型。 ● 小型化 ● 保证 ＳＭＧ ◆规格表 项 目

ESMG500E101MHB5D

Abstract: 1001N ESMG500E102MK25S ESMG500 ESMG500E ESMG250E472MLN3S
Contextual Info: リード形・小形化標準品（85℃） 標準品 ● ● 耐洗浄 RoHS指令 適合品 SMQ ~ 250V 85℃ 2,000 時間保証。 315 ∼ 450Vdc は基板洗浄タイプではありませんのでご注意下さい。 dc 小形化 SMG ◆規格表 項 目