TC25H
Abstract: TI 09T 2SK12 2SK1261
Contextual Info: P o w e r F-MOS FET 2SK1261 2SK1261 Silicon N-channel Power F-M O S FET • P ackage Dim ensions ■ Features • • • • Low ON resistance RDS on : RDS (on) 1 = 0 .1 6 0 (typ.) High switching rate : tf= 56ns (typ.) No secondary breakdown Low voltage drive is possible (VGs = 4V).
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2sk126100171sbtc25hti 09t+12sk12
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2SK1261
Contextual Info: 2SK1261 P o w e r F-MOS FET 2SK1261 Silicon N-channel Power F-MOS FET • Package Dim ensions ■ Features • Low ON resistance R Ds on : RDS (on) 1 = 0 .16fl (typ.) • High switching rate : tf=56ns (typ.) • No secondary breakdown Unit: m m • Low voltage drive is possible (VGs = 4V).
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2sk1261001715bvos-10v |
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibilixp08081xp08546xp0a554xp0d873+13xp0d874xp0d875xp0e5542sc5929mn1280transistor 2sc59293sk1293sk972sc59282pg0092sc5929 equivalent2sk40002sd965 transistor replacement guide
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2SK996
Contextual Info: • Power F-MOS FET Package Package No. ! Type (D44) N Type (D42) 2SK1967 TOP-3(a) (D60) TOP-3F(a) (D63) TOP-3E (D65) TOP-3L (D67) V dss V gss Id (V) (V) (A) RciS'On; V is ton tf td(o«) max. typ. (S) typ. (ns) typ. (ns) typ. (ns) 0.2 4.0 29 53 97 7.1 46
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2sk1868o-220f2sk12552sk1256+72sk19672sk10332sk1257o-220e2sk25782sk25792sk996
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transistor a2160
Abstract: transistor A1270 A1270 transistor transistor 2sD 4515 1431T transistor transistor A769 mn15151 mini circuits 15542 A1270 Y AN 5606K
Contextual Info: Type Number List • Integrated Circuits MOS LSIs M O S L S Is Page Type No, M N 5117 M N171605 32,42 AM N18P83221 43 M N 3671A 62 M N 5126 87 43 M N 3672 62 M N 5128 87 37 ,4 4,45 46 M N 1256 46 M N 1258 46 M N 1259 46 M N12861 46 M N 12862 46 M N 187124
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n12861n13801mn1381n13811+15n13821n15040215p0802n150412mn15151mn152121transistor a2160transistor a1270a1270 transistortransistor 2sd 45151431t transistortransistor a769mini circuits 15542a1270 yan 5606k
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3866S
Abstract: transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515
Contextual Info: H Integrated Circuits MOS LSIs Page MOS LSI Type No. Page Type No. Page Type No. Page Type No. Page M N 171608 42 A M N 18P73210 43 M N 3210 69 M N 5179/H 91 M N 171609 42 AM N 18P73215 43 M N 3214 69 MN5181 91 M N 3102 69 M N 53 00 0 Series 55 M N 33 00 Series
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1020gn12861n12b62mn1381+16mn13811mn1382115p080215p540258851a70803a3866stransistor a999bs 7818 -1995transistor tt 2206a999 transistortt 2206 transistora1535a8340uastransistor 3866s2sd 4515
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2sk type
Abstract: transistor+2sk
Contextual Info: Field Effect Transistors • Silicon MOS FETs # For Medium-Output Electrical Characteristics Ta = 2 5 °C Absolute Maximum Ratings (Ta —25 °C) Application Pch Switching b (A) (W) max. (fi) 1 Y* 1 typ. (S) (ns) ti (ns) td(off) (ns) Package (V) (on) ton
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o-220f58fast2sk typetransistor+2sk |
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D836A
Abstract: k1606 B948A K 1833 N6015 D856A K753 K379 K749A b941a
Contextual Info: Maintenance Types • M aintenance Types • M O S LSIs T y p e No. A lte r n a tiv e _ M N 158455 - M N 40174B /S A lt e r n a t i v e _ M N 1204B - M N 158481 — M N 40175B /S _ M N 50003 M N 1215P - M N 158482 - M N 4018B/S _ M N 50007 M N 1215 - MN 158483
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mn115p1204b1215pmn1221+161227b1237/a1277bmn1281mn12811mn12821d836ak1606b948ak 1833n6015d856ak753k379k749ab941a
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OF03
Abstract: 2SK1263 2SK2377
Contextual Info: Field Effect Transistors • Power F-MOS FETs Line-up Vgs =10V \ Vdss (V) \ to 60 80 100 150 170 200 250 450 500 550 600 800 900 \ (A) \ 1 A2SK2277 Mini Power 1.0 2SK2014 U Type 10 ★2SK2047 I Type a.o (Id=1.2A) ★2SK1834 220Fro ★2SK1980 N Type 7o ★ A2SK2128
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a2sk22772sk20142sk20472sk1834+9220fro2sk1980a2sk2128a2sk21252sk18332sk2509of032sk12632sk2377
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2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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xp06501txp06531xp06545xp0a554+13xp0d873xp0d874xp0d8752sc59362sc6073panasonic transistor 2sc60732sc5929mn1280transistor 2sc60732sc5936 equivalent2sc6074transistor 2sc59292sc5928
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2SK1248
Abstract: 2SK1257 2SK124 2SK1250 2SK1241 2SK1249 2sk1259 2SK1243 2SK1244 2SK1245
Contextual Info: - 92 - f m. % *± « ffl m E mmi A £ V* h ft* E ft K V * (V) fé I* !xl X ft (A) P d /P c h (W) I g SS (max) (A) Vg s (V) (min) (A) «I (max) V d s (A) (V) 'te & (Ta=25tî) (min) (max) V d s (V) (V) (V) gm (min) (tys) V d s (S) (V) (S) Id (A) 2SK1241
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2sk1241zsk12422sk1243-10/i+122sk12442sk12452sk12230130ns190nstyp2sk12622sk12482sk12572sk1242sk12502sk12492sk1259
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2SK1045
Abstract: 2SK1048 2SK1050 2SK1044 2SD2791 2SK1011 2sd2498 2SD299 2SD300 2SD373
Contextual Info: STI Type: 2SC642A Notes: Polarity: NPN Power Dissipation: 50 VCEV: VCEO: 800 ICEV: ICEV A: hFE: 30 hFE A: 150m VCE: VBE: IC: COB: fT: 2.0 Case Style: TO-204AA/TO-3: Industry Type: 2SC642A STI Type: 2SC643 Notes: Polarity: NPN Power Dissipation: 50 VCEV: VCEO: 1100
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2sc642ao-204aa/to-32sc6432n4030die+122c40302sc643a2sk10452sk10482sk10502sk10442sd27912sk10112sd24982sd2992sd3002sd373
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MN1280
Abstract: AN6512 MN15814 MN15245 2Sb1163a mn158413 AN7210 AN7226 MN15287 MN15283
Contextual Info: pes H Maintenance • mos LS Is Type No. Alternative ^ype No. Alternative Type No. - MN6040Z — - MN6049 — MN3726FE/AE MN4520B/S MN4521 B/S - — MN3726AE MN4522B/S - MN6063 MN6063A - MN4526B/S - MN6064 - - MN4528B/S — - MN4532B/S — MN6064R/S MN61074
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mn1380mn13801mn13802mn1381+16mn13811mn13812mn1382mn13821mn13822mn1544mn1280an6512mn15814mn152452sb1163amn158413an7210an7226mn15287mn15283
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2sk2015
Abstract: 2SK2277 2SK2377 2SK1635 2SK2014 2SK2016 2SK1257 2sk1259 2SK1262 2SK2276
Contextual Info: Field Effect Transistors • Silicon MOS FETs # For Medium-Output Electrical Characteristics Ta = 2 5 °C Absolute Maximum Ratings (Ta = 2 5 °C) Type No. Application Pch 2SJ0398 2SK2014 2SK2015 Switching Nch 2SK2016 A2SK2211 A2SK2276 A2SK2277 A2SK2342 *1 0 = 2 5 ^
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2sj03982sk20142sk20152sk2016+12a2sk2211a2sk2276a2sk2277a2sk23422sk1262o-220f2sk22772sk23772sk16352sk12572sk12592sk2276
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K614
Abstract: K 1833 2SK 129 A gn1015 2SK1257 equivalent 2SK1962 2sk 170 Pin GN1021 IC STK411-220E CIRCUIT K996
Contextual Info: Field Effect Trarisistors _ i_ • Silicon Junction FETs Absolute Maximum Ratings Package No. S Mini Type Mini Type (05} Electrical Characteristics (Ta — 25 "C ) (Ta = 25 °C ) Application New S Type TO -92 (D10)
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2sk6622sk11032sj1632sk198+162sk3742sk1232sk12162sk18422sj1642sk301k614k 18332sk 129 agn10152sk1257 equivalent2sk19622sk 170 pingn1021ic stk411-220e circuitk996
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